• Transactions on Electrical and Electronic Materials
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• v.8 no.6
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• pp.250-254
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• 2007

Applying the moving photo-carrier grating(MPG) technique and time-of-flight(TOF) measurements, we studied the transport properties of stabilized amorphous selenium typical of the material used in direct conversion X-ray imaging devices. For MPG measurement, we obtained electron and hole mobility and the recombination lifetime of $\alpha-Se$ films with arsenic(As) additions. We found an apparent increase in hole drift mobility and recombination lifetime, especially when 0.3 % As was added into $\alpha-Se$ film, whereas electron mobility decreased with the addition of As due to the defect density. For TOF measurement, a laser beam with pulse duration of 5 ns and wavelength of 350 nm was illuminated on the surface of $\alpha-Se$ with a thickness of 400 ${\mu}m$. The measured hole and electron transit times were about 8.73 ${\mu}s$ and 229.17 ${\mu}s$, respectively.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.97-97
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• 2013

We present a comprehensive study on the integration of h-BN with silicon MOSFET. Temperature dependent mobility modeling is used to discern the effects of top-gate dielectric on carrier transport and identify limiting factors of the system. The result indicates that coulomb scattering and surface roughness scattering are the dominant scattering mechanisms for silicon MOSFETs at relatively low temperature. Interposing a layer of h-BN between $SiO_2$ and Si effectively weakens coulomb scattering by separating carriers in the silicon inversion layer from the charged centers as 2-dimensional h-BN is relatively inert and is expected to be free of dangling bonds or surface charge traps owing to the strong, in-plane, ionic bonding of the planar hexagonal lattice structure, thus leading to a significant improvement in mobility relative to undecorated system. Furthermore, the atomically planar surface of h-BN also suppresses surface roughness scattering in this Si MOSFET system, resulting in a monotonously increasing mobility curve along with gate voltage, which is different from the traditional one with a extremum in a certain voltage. Alternatively, high-k dielectrics can lead to enhanced transport properties through dielectric screening. Modeling indicates that we can achieve even higher mobility by using h-BN decorated $HfO_2$ as gate dielectric in silicon MOSFETs instead of h-BN decorated $SiO_2$.

• Journal of Applied Biological Chemistry
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• v.43 no.1
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• pp.18-24
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• 2000

A one-dimensional transport of displacing monovalent ion, $A^+$, and a trivalent ion being displaced, $B^{3+}^ in a porous exchange system such as soil was approximated using the Crank-Nicolson implicit finite difference technique and the Thomas algorithm in tandem. The variations in the concentration profile were investigated by varying the ion-exchange equilibrium constant (k) of ion-exchange reactions, the influent concentrations, and the cation exchange capacity (CEC) of the exchanger, under constant flux condition of pore water and dispersion coefficient. A higher value of k resulted in a greater removal of the native ion, behind the sharper advancing front of displacing ion, while the magnitude of the penetration distance of $A^+$ was not great. As the CEC increased, the equivalent fraction of $B^{3+}^ initially in the soil was greater, thus indicating that a higher CEC adsorbed trivalent cations preferentially over monovalent ions. Mass balance error from simulation results was less than 1%, indicating this model accounted for instantaneous charge balance fairly well.

• Journal of Soil and Groundwater Environment
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• v.20 no.2
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• pp.41-46
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• 2015

The drag of the excess charge in an electrical double layer at the solid fluid interface due to water flow induces the streaming current, i.e., the streaming potential (SP). Here we introduce a sandbox experiment to study this hydroelectric coupling in case of a tracer test. An acrylic tank was filled up with homogeneous sand as a sand aquifer, and the upstream and downstream reservoirs were connected to the sand aquifer to control the hydraulic gradient. Under a steady-state water flow condition, a tracer test was performed in the sandbox with the help of peristaltic pump, and tracer samples were collected from the same interval of five screened wells in the sandbox. During the tracer test, SP signals resulting from the distribution of 20 nonpolarizable electrodes were measured at the top of the tank by a multichannel meter. The results showed that there were changes in the observed SP after injection of tracer, which indicated that the SP was likely to be related to the solute transport.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.1
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• pp.93-97
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• 2022

We report highly efficient quantum dot light-emitting diodes (QLEDs) with TiO₂ nanoparticles (NPs) as an alternative electron transport layer (ETL) and poly (methyl methacrylate) (PMMA) as an insulating layer. TiO₂ NPs were applied as ETLs of inverted structured QLEDs and the effect of the addition of PMMA between ETL and emission layer (EML) on device characteristics was studied in detail. A thin PMMA layer supported to make the charge balance in the EML of QLEDs due to its insulating property, which limits electron injection effectively. Green QLEDs with a PMMA layer produced the maximum luminance of 112,488 cd/m² and a current efficiency of 25.92 cd/A. We expect the extended application of TiO₂ NPs as the electron transport layer in inverted structured QLEDs device in the near future.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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• v.28 no.3
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• pp.193-199
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• 2022

Sustainable energy supplies without the recharging and replacement of charge storage device have become increasingly important. Among various energy harvesters, the triboelectric nanogenerator (TENG) has attracted considerable attention due to its high instantaneous output power, broad selection of available materials, eco-friendly and inexpensive fabrication process, and various working modes customized for target applications. The TENG harvests electrical energy from wasted mechanical energy in the ambient environment. TENG devices are very likely to be used in next-generation renewable energy and energy harvesting. TENG devices have the advantage of being able to manufacture very simple power devices. In this experiment, various organic dielectrics and inorganic dielectrics were used to improve the open voltage of TENG, Among the various organic dielectrics, Teflon-based FEP, which has the highest electron affinity, showed the highest open voltage and Al electrode was fabricated on Teflon substrate by sputtering deposition process. And AAO (Anodized Aluminum Oxide) nanostructures were applied to maximize the specific surface area of the TENG device. The power generation of TENG within the acceleration level (0.25, 0.5, 1.0, 1.5 and 2 G) and the frequency range (5-120 Hz) of the domestic transport environment was up to 4 V.

• Polymer Science and Technology
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• v.24 no.2
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• pp.159-164
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• 2013

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1165-1167
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• 2007

Delta doping method can separate the threshold voltage control region from the charge transport region in a-Si TFT, whereby the threshold voltage of a TFT could be modified. Threshold voltage could be changed by delta doping, while field effect mobility was estimated to be 80% of that of standard TFT.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1414-1417
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• 2008

Using a $Ir(ppy)_3$ doped in the TCTA:$Bepp_2$ mixed host and N- and P-doped in TCTA:$Bepp_2$ charge transport layers, an ideal energy level alignment technology is developed. A very low roll-off current efficiency of 7.4 % at a luminance of $10,000\;cd/m^2$ with this technology is demonstrated in green phosphorescent OLEDs.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.368.1-368.1
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• 2014

We proposed amorphous GeSe-based ReRAM device of metal-insulator-metal (M-I-M) structure. The operation characteristics of memory device occured unipolar switching characteristics. By introducing the concepts of valance-alternation-pairs (VAPs) and chalcogen vacancies, the unipolar resistive switching operation had been explained. In addition, the current transport behavior were analyzed with space charge effect of VAPs, Schottky emission in metal/GeSe interface and P-F emission by GeSe bulk trap in mind. The GeSe ReRAM device of M-I-M structure indicated the stable memory switching characteristics. Furthermore, excellent stability, endurance and retention characteristics were also verified.