• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1203-1205
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• 2007

Confinement of charge carrier and exciton is the essential factor for enhancing the efficiency and stability of the electrophosphorescent devices. The interplay between the properties of emitters and other adjacent layers are studied based on the physical interpretation with difference of energy level, charge carrier mobility, and corresponding charge-trapping behavior.

• Journal of Adhesion and Interface
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• v.20 no.4
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• pp.155-161
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• 2019

Understanding charge transport anisotropy at the interface of conjugated nanostructures basically gives insight into structure-property relationship in organic field-effect transistors (OFET). Here, the anisotropy of the field-effect mobility at the interface between 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) single crystal with cofacial molecular stacks in a-b basal plane and SiO gate dielectric was investigated. A solvent exchange method has been used in order for TIPS-pentacene single crystals to be grown on the surface of SiO₂ thin film, corresponding to the charge accumulation at the interface in OFET structure. In TIPS-pentacene OFET, the anisotropy ratio between the highest and lowest measured mobility is revealed to be 5.2. By analyzing the interaction of a conjugated unit in TIPS-pentacene with the nearest neighbor units, the mobility anisotropy can be rationalized by differences in HOMO-level coupling and hopping routes of charge carriers. The theoretical estimation of anisotropy based on HOMO-level coupling is also consistent with the experimental result.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.27 no.10
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• pp.1498-1507
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• 2003

A SMPS(scanning mobility particle sizer) system measures the number size distribution of particles using electrical mobility detection technique. An aerosol charge neutralizer, which is a component of the SMPS, is a bipolar charger using a radioactive source to apply an equilibrium charge distribution to aerosols of unknown charge distribution. However, the performance of aerosol charge neutralizers is not well known, especially for highly charged particles. In this study, the effect of the particle charging characteristics of two aerosol charge neutralizers on the measurement using a SMPS system was experimentally investigated for highly charged polydisperse particles. One has radioactive source of $^{85}$ Kr (beta source, 2 mCi) and the other has $^{210}$ Po (alpha source, 0.5 mCi). The air flow rate passing through each aerosol charge neutralizer was changed from 0.3 to 3.0 L/min. The results show that the non-equilibrium character in particle charge distribution appears as the air flow rate increases although the particle number concentration is relatively low in the range of 1.5∼2x10$^{6}$ particles/㎤. The low neutralizing efficiency of the $^{85}$ Kr aerosol charge neutralizer for highly charged particles can cause to bring an artifact in the measurement using a SMPS system. However, the performance of the $^{210}$ Po aerosol charge neutralizer is insensitive to the air flow rate.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.4 s.334
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• pp.1-8
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• 2005

The increased effective impurity due to the pocket ion implantation is well blown to give rise to a reduction of the effective mobility of halo MOSFETs. However, further decrease of the effective mobility can be observed in pocket implanted MOSFETs above the mobility reduction due to the Coulomb impurity scattering and the gate bias dependency of the effective mobility can also differ from the simple model describing the mobility behavior in terms of the effective impurity. Phonon scattering and surface scattering as well as impurity Coulomb scattering are also shown to be effective in the degradation of the carrier mobility of pocket implanted MOSFETs. Using the 1-D regional approximation the effect of the distribution of the inversion charge density along the channel on the drain current is investigated. The inhomogeneous channel charge distribution due to pocket implantation is also shown to contribute to the further reduction of the effective mobility in halo MOSFETs.

• Journal of Adhesion and Interface
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• v.24 no.2
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• pp.64-68
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• 2023

Organic field-effect transistors (OFETs) are attracting attention in the field of next-generation electronic devices, and they can be fabricated on a flexible substrate using an organic semiconductor as a channel layer. In particular, DPP-based semiconducting conjugated polymers are actively used because they have higher charge carrier mobility than other organic semiconductors, but they are still lower than inorganic semiconductors, so various studies are being conducted to improve the charge carrier mobility. In this study, the charge carrier mobility is improved by controlling the surface energy of the substrate by forming self-assembled monolayers (SAMs). As the surface energy of the substrate is controlled by the SAMs, the crystallinity increases, thereby improving the charge carrier mobility by 14 times from 3.57×10^-3 cm²V^-1s^-1 to 5.12×10^-2 cm²V^-1s^-1

• Journal of the Korean Professional Engineers Association
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• v.42 no.1
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• pp.34-38
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• 2009

There are three major international agreements governing mutual recognition of engineering qualifications and professional competence of the International PEs; namely, Washington Accords, APEC engineer agreement and EMF agreement. International Organizations of APEC Engineer Coordinating Committer and Engineers Mobility Forum established international registries with the goal of improving international mobility. APEC and EMF membership requires minimum qualifications for licensure with the minimum standards including engineering education, Professional experience, compliance with home jurisdiction requirements, having verified record of responsible charge, and demonstrating a commitment to continuing education.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.4
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• pp.77-83
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• 1994

In this paper we numerically approximated the field-effect mobility of a-Si:H TFT. Field-effect mobility, based on the charge-trapping model and new effective capacitance model in our study, used Chebyshev approximation was approximated as the function of gate potential(gate-to-channel voltage). Even though various external factors are changed, this formula can be applied by choosing the characteristic coefficients without any change of the approximation formula corresponding to each operation region. Using new approximated field-effect mobility formula, the dependences of field-effect mobility on materials and thickness of gate insulator, thickness of a-Si bulk, and operation temperature in inverted staggered-electrode a-Si:H TFT were estimated. By this was the usefulness of new approximated mobility formula proved.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1684-1689
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• 2003

Dielectric Barrier Discharges (DBD) in oxygen and air are well established for the production of large quantities of ozone and are more recently being applied to a wider range of after treatment processes for HAPs(Hazardous Air Pollutants). The potential use as a charger for particle collection are not well known. In this work, we measured charge distribution of nanometer or submicron sized particles passing through the dielectric barrier discharge reactor. The bipolar charge characteristics of particles passing DBD reactor were investigated. Fluorometric method using uranine particles and a fluorometer was employed to examine the bipolar charging characteristics of the charged particles by DBD reactor. Finally, the charge distributions of particles were determined from the electrical mobility classification using DMA.

• Journal of the Korean Ceramic Society
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• v.36 no.12
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• pp.1374-1380
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• 1999

The cause of Scond Harmonic Generation (SHG) in thermally poled silica glass is suggested basedon the electrical and dielectric relaxation measurements. The absorption currents as functions of time were measured for various types of silica glasses and analyzed by the theory of Space Charge Polarization. Space charge polarization occurs when an ionic conducting material is subjected to dc electric field with blocking electrode. Thermal poling performed to induce SHG in silica glass is basically identical to the process generating space charge polarization. Hence it was found that gene-ration removal reproduction and temperature dependence of SHG in poled silica is directly related to those of space charge polarization. It turned out that the fundamental parameters governing the SHG in poled silica are charge carrier concentration and mobility. Based on the theory of space charge polarization and experimental results of electrical rela-xation the method to increase the intensity of SHG is proposed.

• Journal of the Korean Ceramic Society
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• v.53 no.3
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• pp.301-305
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• 2016

We investigate proton conduction in a nonstoichiometric ${\Sigma}3$ $BaZrO_3$ (210)[001] tilt grain boundary using density functional theory (DFT). We employ the space charge layer (SCL) and structural disorder (SD) models with the introduction of protons and oxygen vacancies into the system. The segregation energies of proton and oxygen vacancy are determined as -0.70 and -0.54 eV, respectively. Based on this data, we obtain a Schottky barrier height of 0.52 V and defect concentrations at 600K, in agreement with the reported experimental values. We calculate the energy barrier for proton migration across the grain boundary core as 0.61 eV, from which we derive proton mobility. We also obtain the proton conductivity from the knowledge of proton concentration and mobility. We find that the calculated conductivity of the nonstoichiometric grain boundary is similar to those of the stoichiometric ones in the literature.