• Journal of Information Display
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• v.10 no.4
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• pp.143-148
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• 2009

The theoretical current density equations for organic semiconductors was derived according to the internal carrier emission equation based on the diffusion model at the Schottky barrier contact and the mobility equation based on the field dependence model, the so-called "Poole-Frenkel mobility model." The electric field becomes constant because of the absence of a space charge effect in the case of a higher injection barrier height and a lower sample thickness, but there is distribution in the electric field because of the space charge effect in the case of a lower injection barrier height and a higher sample thickness. The transition between the injection- and bulk-limited currents was presented according to the Schottky barrier height and the sample thickness change.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.2
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• pp.79-99
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• 2010

Pulsed current-voltage (I-V) methods are introduced to evaluate the impact of fast transient charge trapping on the performance of high-k dielectric transistors. Several pulsed I-V measurement configurations and measurement requirements are critically reviewed. Properly configured pulsed I-V measurements are shown to be capable of extracting such device characteristics as trap-free mobility, trap-induced threshold voltage shift (${\Delta}V_t$), as well as effective fast transient trap density. The results demonstrate that the pulsed I-V measurements are an essential technique for evaluating high-$\kappa$ gate dielectric devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.184-187
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• 2009

In this paper, we study effect of charge balance on performance of blue phosphorescent organic light emitting diodes (OLEDs). Charge balance determines the location of recombination zone in the OLEDs. By tuning the charge balance in iridium (III) bis[(4,6-difluorophenyl)-pyridinate-N,C2']picolinate (FIrpic) based blue phosphorescent organic light-emitting devices (PHOLEDs) with a high mobility and high triplet energy electron transporting material, we were able to achieve a high current efficiency of 60 cd/A which is a 3X improvement over previous devices with 3,5'-N,N'-dicarbazole-benzene (mCP) host.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.3
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• pp.227-234
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• 2000

Electrical conduction characteristics of crosslinked polyethylene(XLPE) were investigated using an electrode made of semicon material containing a surfactant. When the semicon material is used as an electrode the conduction of XLPE obeys a space charge limited conduction(SCLC) mechanism which holds true for both control and surfactant-containing semicon electrodes. Conduction currents get higher with the addition of surfactant in the semicon electrodes while the charge mobility increases with the increase of surfactant content in the semicon electrode. The diffusion of surfactant molecules into the XLPE was confirmed via a $\mu$-FTIR analysis. It was found through a measurement of spatial charge distributions that the surfactant in the semicon electrodes enhances the injection of negative charge into the XLPE from the electrode. Experimental results and their origins are discussed in detail.

• ETRI Journal
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• v.27 no.3
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• pp.319-325
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• 2005

In this paper the effect of temperature on the electrical properties of organic semiconductor disperse orange dye 25 (OD) have been examined. Thin films of OD have been deposited on $In_{2}O_{3}$ substrates using a centrifugal machine. DC current-voltage (I-V) characteristics of the fabricated devices $(Al/OD/In_{2}O_{3)$ have been evaluated at varying temperatures ranging from 40 to $60^{\circ}C$. A rectification behavior in these devices has been observed such that the rectifying ratio increases as a function of temperature. I-V characteristics observed in $Al/OD/In_{2}O_{3)$ devices have been classified as low temperature $({\leq} 50^{\circ}C)$ and high temperature characteristics (approximately $60^{\circ}C$). Low temperature characteristics have been explained on the basis of the charge transport mechanism associated with free carriers available in OD, whereas high temperature characteristics have been explained on the basis of the trapped space-charge-limited current. Different electrical parameters such as traps factor, free carrier density, trapped carrier density, trap density of states, and effective mobility have been determined from the observed temperature dependent I-V characteristics. It has been shown that the traps factor, effective mobility, and free carrier density increase with increasing values of temperature, whilst no significant change has been observed in the trap density of states.

• Journal of the Korean Society of Radiology
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• v.4 no.4
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• pp.37-40
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• 2010

In this paper, transport properties of charge carrier which is produced by x-ray exposure were investigated.. It is the research of charge transport and specific property of trap that is performed in direct digital x-ray image receptor. We measured transit time and drift mobility of charge carriers of a-Se photoconductor using time-of-flight method. We made a testing glass with a-Se of $100{\mu}m$ thickness on corning glass using thermal evaporation method. As a result of this experiment, electron and hole transit time was each $229.17{\mu}s$ and $8.73{\mu}s$ at $10V/{\mu}m$ electric field and drift mobility was each $0.00174cm^2/V{\cdot}s$, $0.04584cm^2/V{\cdot}s$. But the results shows us different measurement value of electron and charge drift mobility and it was investigated about charge transport properties and trap mechanism.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.25 no.1
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• pp.124-132
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• 2001

This paper reports on the charge distribution measurements of submicron particles for three different charging mechanisms, which are spray electrification, bipolar ionization and corona discharge process, respectively. The number of elementary charges per particle was investigated by classifying and counting of a discrete mobility class. Charge distribution measurements were performed with NaCl particles generated from a collision atomizer for 0.01, 0.1, 1% NaCl solutions. Experimental results show than charge level of atomized NaCl particles is high and decreases with increasing the dissolved ion concentration. The charge level of the atomized NaCl particles can be reduced to that o Boltzmann equilibrium conditions by the bipolar ionization(Po(sup)210 bipolar ionizer). The charge level on NaCl particles passing through the corona discharge reactor is much higher than those of atomized or bipolar ionized NaCl particles. The evaluation of these measurements results in charge distribution of the submicron particles.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.24 no.6
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• pp.753-759
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• 2000

Photoelectric charging is a very efficient way of charging small particles. This method can be applied to combustion measurement, electrostatic precipitator, metal separation and control of micro-contamination. To understand the photoelectric charging mechanism, particle charging of silver by exposure to ultraviolet is investigated in this study. Average charges and charge distributions are measured at various conditions, using two differential mobility analyzers, a condensation nucleus counter, and an aerosol electrometer. The silver particles are generated in a spark discharge aerosol generator. After that process, the generated particles are charged in the photoelectric charger using low-pressure mercury lamp that emits ultraviolet having wavelength 253.7 nm. The results show that ultra-fine particles are highly charged by the photoelectric charging. The average charges linearly increase with increasing particle size and the charge distribution change with particle size. These results are discussed by comparison with previous experiments and proposed equations. It is assumed that the coefficient of electron emission probability is affected by initial charge. The results also show that the charge distribution of a particle is dependent on initial charge. Single changed particle, uncharged particle and neutralized particle are compared. The differences of charge distribution in each case increase with increasing particle size.

• Bulletin of the Korean Chemical Society
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• v.31 no.1
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• pp.41-46
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• 2010

In this work, we report on the characterization of six low-$T_g$ poly[methyl-3-(9-carbazolyl) propylsiloxane] based photorefractive (PR) composites sensitized with poly(3-hexylthiophene) (P3HT) in different concentrations, ranging from 0.2 to 1 wt %. At 632.8 nm, photoconductivity, space charge field, refractive index modulation, and grating buildup time were measured versus external electric field. The photoconductivity was strongly dependent on the visible light absorption and mobility. The magnitude of space charge field was affected by the conductivity contrast $\sigma_{ph}/(\sigma_{ph}+\sigma_d)$. The refractive index modulation increased with the magnitude of space charge field and the PR grating buildup speed increased with the photoconductivity.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.374-374
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• 2010

Charge transfer mechanism of poly(4,4'-aminotriphenylene hexafluoroisopropylidenediphthalimide) (TP6F PI) which exhibits bistable ON and OFF switching has been studied using photoemission electron spectroscopy (PES) and near-edge x-ray absorption fine structure (NEXAFS). Here, we demonstrate novel set-up in which holes are injected by photoemission process instead of direct charge carrier injection via metal electrode. The accumulated charges on the PI surface in the OFF state abruptly flow across the PI film when the bias voltage of a back electrode reaches a specific value, indicating that the film is changed to the ON state. Core level and x-ray absorption spectra probed at charge injection region via photoemission process do not show any evidences implying structural modification of TP6F PI during the phase change. Whereas, in valence band spectra, the highest occupied molecular orbital (HOMO) is shifted toward Fermi level, responsible for improved hole-mobility of TP6F PI of ON state.