• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.133-133
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• 2009

It is desirable to choose a high-k material having a large band offset with the tunneling oxide and a deep trapping level for use as the charge trapping layer to achieve high PIE (Programming/erasing) speeds and good reliability, respectively. In this paper, charge trapping and tunneling characteristics of high-k hafnium oxide ($HfO_2$) layer with various thicknesses were investigated for applications of tunnel barrier engineered nonvolatile memory. A critical thickness of $HfO_2$ layer for suppressing the charge trapping and enhancing the tunneling sensitivity of tunnel barrier were developed. Also, the charge trap centroid and charge trap density were extracted by constant current stress (CCS) method. As a result, the optimization of $HfO_2$ thickness considerably improved the performances of non-volatile memory(NVM).

• Journal of Electrical Engineering and Technology
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• v.10 no.3
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• pp.1102-1106
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• 2015

A hybrid supercapacitor (HS) is an energy storage device used to enhance the low weight energy density (Wh/kg) of a supercapacitor. On the other hand, a sudden decrease in capacity has been pointed out as a reliability problem after many charge/discharge cycles. The reliability problem of a HS affects the early aging process. In this study, the capacity performance of a HS was observed after charge/discharge. For detailed analysis of the initial charge/discharge cycles, the charge and discharge curve was measured at a low current density. In addition, a solid electrolyte interphase (SEI) layer was confirmed after the charge/discharge. A HC composed of a lithium titanate (LTO) anode and active carbon cathode was used. The charge/discharge efficiency of the first cycle was lower than the late cycles and the charge/discharge rate was also lower. This behavior was induced by SEI layer formation, which consumed Li ions in the LTO lattice. The formation of a SEI layer after the charge/discharge cycles was confirmed using a range of analysis techniques.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.497-500
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e.g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current. 缀Ѐ㘰〻ሀ䝥湥牡氠瑥捨湯汯杹

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2008.10a
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• pp.201-204
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• 2008

The use of the pulsed electro acoustic (PEA) method allowed us to perform the direct observations of spatio-temporal charge distributions in Electric double layer capacitors (EDLCs) based on polarizable nanoporous carbonaceous electrode. The negative charge density became the maximum, about 205 C/$m^3$ at the region where was near to collector layer in EDLCs for case $V_{DC}$ = 2.5 V, while the positively charged density became the maximum, about 61.1 C/$m^3$ at the region where it was located around the cathode layer. The PEA measurement used here is a very useful method to quantitively investigates the spatio-temporal charge distribution in EDLCs.

• Journal of the Korean Ceramic Society
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• v.22 no.6
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• pp.53-57
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• 1985

Korean montmorillonite from Youngil district was characterized by Alkylammonium derivatives. This method was very sensitive to the basal plane spacing d and the charge in the layer charge. The result include the values of average layer charge, charge distribution, equivalent area. interlayer cationic exchange capacity (C, E, C) and total C. E. C.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.73-77
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• 2021

Inorganic-organic hybrid perovskite solar cells have demonstrated considerable improvements, reaching 25.5% of certified power conversion efficiency in 2020 from 3.8% in 2009. In normal structured perovskite solar cells, TiO2 electron-transporting materials require heat treatment process at a high temperature over 450℃ to induce crystallinity. Inverted perovskite solar cells have also been studied to exclude the additional thermal process by using [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) as a non-oxide electron-transporting layer. However, the drawback of the PCBM layer is a charge accumulation at the interface between PCBM and a metal electrode. The impact of bathocuproin (BCP) buffer layer on photovoltaic performance has been investigated herein to solve the problem of PCBM. 2-mM BCP-modified perovskite solar cells were observed to exhibit a maximum efficiency of 12.03% compared with BCP-free counterparts (5.82%) due to the suppression of the charge accumulation at the PCBM-Au interface and the resulting reduction of the charge recombination between perovskite and the PCBM layer.

• Transactions on Electrical and Electronic Materials
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• v.16 no.4
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• pp.183-186
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• 2015

This research investigates the impact of charge spreading on the data retention of three-dimensional (3D) silicon-oxide-nitride-oxide-silicon (SONOS) flash memory where the charge trapping layer is shared along the cell string. In order to do so, this study conducts an electrical analysis of the planar SONOS test pattern where the silicon nitride charge storage layer is not isolated but extends beyond the gate electrode. Experimental results from the test pattern show larger retention loss in the devices with extended storage layers compared to isolated devices. This retention degradation is thought to be the result of an additional charge spreading through the extended silicon nitride layer along the width of the memory cell, which should be improved for the successful 3-D application of SONOS flash devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.119-119
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• 2008

The electrical characteristics of Metal-Ferroelectric-Nitride-Oxide-Silicon (MFNOS) structure is studied and compared to the conventional Silicon-Oixde-Nitride-Oxide-Silicon (SONOS) capacitor. The ferroelectric blocking layer is SrBiNbO (SBN with Sr/Bi ratio 1-x/2+x) with the thickness of 200 nm and is fabricated by the RF sputter. The memory windows of MFNOS and SONOS capacitors with sweep voltage from +10 V to -10 V are 6.9 V and 5.9 V, respectively. The effect of ferroelectric blocking layer and charge trapping on the memory window was discussed. The retention of MFNOS capacitor also shows the 10-years and longer retention time than that of the SONOS capacitor. The better retention properties of the MFNOS capacitor may be attributed to the charge holding effect by the polarization of ferroelectric layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.6
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• pp.445-449
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• 2020

Non-volatile memory is approaching its fundamental limits with the Si₃N₄ storage layer, necessitating the use of alternative materials to achieve a higher programming/erasing speed, larger storage window, and better data retention at lower operating voltage. This limitation has restricted the development of the charge-trap memory, but can be addressed by using high-k dielectrics. The paper reviews the doping of nitrogen, titanium, and yttrium on high-k dielectrics as a storage layer by comparing MONOS devices with different storage layers. The results show that nitrogen doping increases the storage window of the Gd₂O₃ storage layer and improves its charge retention. Titanium doping can increase the charge capture rate of HfO₂ storage layer. Yttrium doping increases the storage window of the BaTiO₃ storage layer and improves its fatigue characteristics. Parameters such as the dielectric constant, leakage current, and speed of the memory device can be controlled by maintaining a suitable amount of external impurities in the device.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1156-1157
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• 2008

The use of the pulsed electro acoustic (PEA) method allowed us to perform the direct observations of spatio-temporal charge distributions in Electric double layer capacitors (EDLCs) based on polarizable nanoporous carbonaceous electrode. The negative charge density became the maximum, about 205 $C/m^3$ at the region where was near to collector layer in EDLCs for case $V_{DC}$ = 2.5 V, while the positively charged density became the maximum, about 61.1 $C/m^3$ at the region where it was located around the cathode layer. The PEA measurement used here is a very useful method to quantitively investigates the spatio-temporal charge distribution in EDLCs.