• Bulletin of the Korean Space Science Society
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• 2003.05b
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• pp.49-49
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• 2003

No Abstract, See Full Text

• The Bulletin of The Korean Astronomical Society
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• v.28 no.1
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• pp.74-74
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• 2003

• 대한방사선방어학회:학술대회논문집
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• 2010.04a
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• pp.172-173
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• 2010

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.375-378
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• 2002

There has recently been a great deal of interest in amorphous selenium for application of digital x-ray image sensor. The initial number of the electron-hole induced by interaction a-Se with x-ray photons and the collection efficiency to surface of generated charges are important parameters for x-ray sensitivity of the a-Se. Therefore, in this paper, we analyzed that thickness of a-Se film and electric field is affected on the initial number of electron-hole and the collection efficiency. The experimental value of x-ray induced charge about the various thickness and the electric field is compared with estimated absorbed energy through MCNP 4C code to analyze the mechanism x-ray induced signal of a-Se. The experimental results showed that the electric field depends on initial escape coefficient and the thickness depends on collection coefficient than escape efficient.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.18 no.8
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• pp.60-66
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• 2019

This study aims to develop and manufacture a device for inspecting impurities in a sealed aluminum container using an X-ray technique. Two X-ray oscillators and detectors are used to detect the entire sample. The stage for sample movement was fabricated using two high-voltage generators and X-ray detectors arranged diagonally. In addition, the high-voltage generator is composed of a vacuum tube, a high-voltage generator, and circulating oil for cooling. It includes a control unit for controlling other equipment, a power supply unit, and a video output unit; the most important part of the X-ray is the X-ray generation part. In this study, a flat panel was used along with the aim of developing the detector part. In particular, the development of the scintillator introduced in this study is a primary focus. The developed scintillator can be combined with a lens and can then be assembled with a charge coupled device (CCD) sensor.

• Nuclear Engineering and Technology
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• v.56 no.1
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• pp.189-194
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• 2024

This paper presents a radiation-hardened-by-design preamplifier that utilizes a self-compensation technique with a charge-sensitive amplifier (CSA) and replica for total ionizing dose (TID) effects. The CSA consists of an operational amplifier (OPAMP) with a 6-bit binary weighted current source (BWCS) and feedback network. The replica circuit is utilized to compensate for the TID effects of the CSA. Two comparators can detect the operating point of the replica OPAMP and generate appropriate signals to control the switches of the BWCS. The proposed preamplifier was fabricated using a general-purpose complementary metal-oxide-silicon field effect transistor 0.18 ㎛ process and verified through a test up to 230 kGy (SiO₂) at a rate of 10.46 kGy (SiO₂)/h. The code of the BWCS control circuit varied with the total radiation dose. During the verification test, the initial value of the digital code was 39, and a final value of 30 was observed. Furthermore, the preamplifier output exhibited a maximum variation error of 2.39%, while the maximum rise-time error was 1.96%. A minimum signal-to-noise ratio of 49.64 dB was measured.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.845-848
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• 2005

This paper describes a 4.224GHz CMOS charge pump PLL for Mode 1 MB-OFDM UWB hopping carrier generation. It includes a qudrature VCO of which the frequency range is from 3.98GHz to 4.47GHz(@ 0.4 to 1.5 V), a divider, a PFD, a loop filter, a charge pump, and a lock detector. Designed in a 0.18um CMOS technology, the PLL draws 6.6mA from a 1.8V supply. The phase noise of the designed VCO is -133dBc/Hz@3MHz.

• Proceedings of the Korean Nuclear Society Conference
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• 1996.05d
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• pp.133-138
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• 1996

For the application of hydrogenated amorphous silicon (a-Si:H) p-i-n structural diode as the alpha particle spectroscopy, the induced charge collection was simulated based on a relevant non-uniform charge generation model. The simulation was accomplished for two extreme cases of the incident direction of alpha particle, p-and n-side, respectively. As expected, for the complete charge collection, the hole collection should be severely considered due to its poor mobility and the full depletion bias required. For the comparison of signal corresponding to the detector configuration or structure, although n-i-p configuration shows a wider range of linearity to the energy, p-i-n configuration is more suitable in the viewpoint of linearity and signal value for the considering energy range.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.32 no.4C
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• pp.389-395
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• 2007

The Film X-ray and the CCD method of current medical image system have the disadvantages such as required large place and diagnosis time. In this paper, we implement an effective medical image system using TXT-DXD method's digital X-ray detector(DR1000C). The implemented medical image system has advantages of placing efficiency and short diagnosis time. In order to make the image out of the system more effective, we develop an LCD(Liquid Crystal Display) control driver, having the resolution of 1900*1200. And we propose an enhancement unsharp masking method to update image enhancement of DR1000C medical image system, and compare it with the current methods.

• Journal of IKEEE
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• v.17 no.4
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• pp.544-549
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• 2013

This paper describes a modified binary phase detector (Bang-Bang phase detector - BBPD) for jitter reduction in clock and data recovery (CDR) circuits. The proposed PD reduces ripples in the VCO control voltage resulting in reduced jitter for CDR circuits. A 2.5 Gbps CDR circuit with a proposed BBPD has been designed and verified using Dongbu $0.13{\mu}m$ CMOS technology. Simulation shows the CDR with proposed PD recovers data with peak-to-peak jitter of 10.96ps, rms jitter of 0.86ps, and consumes 16.9mW.