• 제목/요약/키워드: charge detector

검색결과 198건 처리시간 0.026초

비정질 셀레늄 기반의 X선 검출 센서의 전하 수송 특성 (Charge Transport Characteristics of a-Se based X-ray Detector)

  • 강상식;차병열;장기원;김재형;남상희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.375-378
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    • 2002
  • There has recently been a great deal of interest in amorphous selenium for application of digital x-ray image sensor. The initial number of the electron-hole induced by interaction a-Se with x-ray photons and the collection efficiency to surface of generated charges are important parameters for x-ray sensitivity of the a-Se. Therefore, in this paper, we analyzed that thickness of a-Se film and electric field is affected on the initial number of electron-hole and the collection efficiency. The experimental value of x-ray induced charge about the various thickness and the electric field is compared with estimated absorbed energy through MCNP 4C code to analyze the mechanism x-ray induced signal of a-Se. The experimental results showed that the electric field depends on initial escape coefficient and the thickness depends on collection coefficient than escape efficient.

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이물질 검출을 위한 X-Ray 비파괴검사 장비 개발 (Development of X-ray Non-destructive Testing (NDT) Equipment for the Detection of Alien Substances)

  • 유영태;오준호;김진우
    • 한국기계가공학회지
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    • 제18권8호
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    • pp.60-66
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    • 2019
  • This study aims to develop and manufacture a device for inspecting impurities in a sealed aluminum container using an X-ray technique. Two X-ray oscillators and detectors are used to detect the entire sample. The stage for sample movement was fabricated using two high-voltage generators and X-ray detectors arranged diagonally. In addition, the high-voltage generator is composed of a vacuum tube, a high-voltage generator, and circulating oil for cooling. It includes a control unit for controlling other equipment, a power supply unit, and a video output unit; the most important part of the X-ray is the X-ray generation part. In this study, a flat panel was used along with the aim of developing the detector part. In particular, the development of the scintillator introduced in this study is a primary focus. The developed scintillator can be combined with a lens and can then be assembled with a charge coupled device (CCD) sensor.

Radiation-hardened-by-design preamplifier with binary weighted current source for radiation detector

  • Minuk Seung;Jong-Gyun Choi ;Woo-young Choi;Inyong Kwon
    • Nuclear Engineering and Technology
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    • 제56권1호
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    • pp.189-194
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    • 2024
  • This paper presents a radiation-hardened-by-design preamplifier that utilizes a self-compensation technique with a charge-sensitive amplifier (CSA) and replica for total ionizing dose (TID) effects. The CSA consists of an operational amplifier (OPAMP) with a 6-bit binary weighted current source (BWCS) and feedback network. The replica circuit is utilized to compensate for the TID effects of the CSA. Two comparators can detect the operating point of the replica OPAMP and generate appropriate signals to control the switches of the BWCS. The proposed preamplifier was fabricated using a general-purpose complementary metal-oxide-silicon field effect transistor 0.18 ㎛ process and verified through a test up to 230 kGy (SiO2) at a rate of 10.46 kGy (SiO2)/h. The code of the BWCS control circuit varied with the total radiation dose. During the verification test, the initial value of the digital code was 39, and a final value of 30 was observed. Furthermore, the preamplifier output exhibited a maximum variation error of 2.39%, while the maximum rise-time error was 1.96%. A minimum signal-to-noise ratio of 49.64 dB was measured.

초광대역 시스템 Hopping Carrier 발생을 위한 0.18um 4.224GHz CMOS PLL 설계 (Design of a CMOS Charge Pump PLL of UWB System LO Generation)

  • 이재경;강기섭;박종태;유종근
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2005년도 추계종합학술대회
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    • pp.845-848
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    • 2005
  • This paper describes a 4.224GHz CMOS charge pump PLL for Mode 1 MB-OFDM UWB hopping carrier generation. It includes a qudrature VCO of which the frequency range is from 3.98GHz to 4.47GHz(@ 0.4 to 1.5 V), a divider, a PFD, a loop filter, a charge pump, and a lock detector. Designed in a 0.18um CMOS technology, the PLL draws 6.6mA from a 1.8V supply. The phase noise of the designed VCO is -133dBc/Hz@3MHz.

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Comparison of Alpha Particle Signals with respect to Incident Direction onto n-Si:H pin diodes

  • Kim, Ho-Kyung;Gyuseong Cho;Hur, Woo-Sung;Lee, Wanno;Hong, Wan-Shick
    • 한국원자력학회:학술대회논문집
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    • 한국원자력학회 1996년도 춘계학술발표회논문집(4)
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    • pp.133-138
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    • 1996
  • For the application of hydrogenated amorphous silicon (a-Si:H) p-i-n structural diode as the alpha particle spectroscopy, the induced charge collection was simulated based on a relevant non-uniform charge generation model. The simulation was accomplished for two extreme cases of the incident direction of alpha particle, p-and n-side, respectively. As expected, for the complete charge collection, the hole collection should be severely considered due to its poor mobility and the full depletion bias required. For the comparison of signal corresponding to the detector configuration or structure, although n-i-p configuration shows a wider range of linearity to the energy, p-i-n configuration is more suitable in the viewpoint of linearity and signal value for the considering energy range.

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TFT-DXD 방식의 디지털 X-ray Detector를 이용한 고효율 의료 영상처리시스템 (An Effective Medical Image System using TFT-DXD Method's Digital X-ray Detector)

  • 황재석;이재균;이채욱
    • 한국통신학회논문지
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    • 제32권4C호
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    • pp.389-395
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    • 2007
  • 기존의 필름 X-Ray 및 CCD(Charge Coupled Device) 방식은 공간적인 제약과 진단 시간이 많이 걸리는 단점이 있다. 본 논문에서는 기존 방식들의 단점을 보완할 수 있는 TFT-DXD 방식의 digital X-ray detector (DR1000C)를 이용한 고효율 의료 영상처리시스템을 구현하였다. 본 논문에서 제안하는 DR1000C를 이용한 의료용 영상처리시스템은 기존의 X-Ray 방식에 비해 공간 효율성이 높고 진단 시간이 짧아진다는 장점이 있다. 영상처리시스템에서 획득한 영상을 고화질로 만들기 위해 1900*1200의 해상도를 가지는 LCD 컨트롤 드라이버를 개발하였고, 영상의 성능향상을 위해 enhancement unsharp masking 기법을 제안하여, 기존의 방식과 비교하였다.

단일 에지 이진위상검출기를 사용한 저 지터 클록 데이터 복원 회로 설계 (Design of low jitter CDR using a single edge binary phase detector)

  • 안택준;공인석;임상순;강진구
    • 전기전자학회논문지
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    • 제17권4호
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    • pp.544-549
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    • 2013
  • 본 논문은 CDR회로의 지터 감소를 위해 변형된 이진 위상검출기(뱅뱅위상 검출기- BBPD) 회로를 제안하였다. 제안된 PD는 하나의 에지를 사용함으로써 전압리플을 줄여, 제안한 PD를 적용하여 설계한 CDR회로는 감소된 지터 특성을 보였다. CMOS 0.13um 공정을 사용하여 설계하였고 제안한 위상검출기를 포함하는 클럭데이터 복원회로는 모의실험결과 16.9mW 전력소비에 peak-peak 지터는 10.96ps, rms 지터는 0.89ps을 보였다.