• Applied Science and Convergence Technology
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• v.24 no.5
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• pp.167-171
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• 2015

Quantum-confined nanostructures open up additional perspectives in engineering materials with different electronic and optical properties. We have fabricated unique cation-exchanged CdS and CdS/CdSe quantum dots and measured their first four exciton transitions. We demonstrate that the relationship between electronic transitions and charge-carrier distributions is generalized for a broad range of core-shell nanostructures. These nanostructures can be used to further improve the performance in the fields of bio-imaging, light-emitting devices, photovoltaics, and quantum computing.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.2
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• pp.27-35
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• 1981

In this study, a numerical theory based on space charge overlapping model and experiments on the propriety of its theory were carried out to analyze the switching transient characteristic in amorphous coalcogenide thin film. Theoretical and experimental as well as analytical investigations were carried out on the switching behaviour in a transient state arising from a voltage pulse applied to amorphous chalcogenide thin films at room temperature. The results can be explained in terms ot a simple theoretical model of the electronic characteristics of switching. The injection of carriers are necessary to initiate the switching action and injected carriers contribute to the current flow as a space-charge limited current(SCLC) The proposed charge controlled switching characteristics can be explained by double injection space charge overlapping model.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1984-1985
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• 2007

Polyimide is widely used as a high-temperature insulating material. Space charge distributions in polyimide (PI) films strongly depend upon electric field, temperature, water content and so on. We observed space charge distributions in PI films with various water contents. When a dc field was applied to as-received PI films or water-treated PI films, positive and negative homo space charges were observed near the respective electrodes at 333 K. In dried PI films, the homo space charges were much reduced, and positive and negative hetero space charges in the bulk were clearly observed. The space charge amounts in water-treated PI films were smaller than in as-received ones, while the current density in water-treated PI film was larger than that in as-received one by two or more orders of magnitude. These suggest not only that the charge injection from the electrode is enhanced by absorbed water but also that absorbed water makes carriers mobile. The decay of space charge was also faster in water-treated PI than in as-received or dried one. This also supports the enhancement of apparent mobilities of carriers in PI by absorbed water.

• Nuclear Engineering and Technology
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• v.29 no.6
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• pp.451-458
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• 1997

Signal shapes from a closed-ended coaxial HPGe detector are investigated by numerical methods. The detector used in this study has a volume of 72 ㎤ with relative efficiency of 15%. The electric field and potential distributions in the detector are determined by solving the Poisson equation at the depletion and operating bias. Hence the time dependent signal shapes induced on the electrode are obtained from the energy balance consideration and tv solving the equation of motion for the charge carriers. For various initial positions of a charge carrier pair, the collection times of induced charge vary in the range of 70 - 404 nsec.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2006.05a
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• pp.894-897
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• 2006

Spatial distribution of injected electrons and holes is evaluated by using single-junction charge pumping technique in SONOS(Poly-silicon/Oxide/Nitride/Oxide/Silicon) memory cells. Injected electron are limited to length of ONO(Oxide/Nitride/oxide) region in locally ONO stacked cell, while are spread widely along with channel in fully ONO stacked cell. Hot-holes are trapped into the oxide as well as the ONO stack in locally ONO stacked cell.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.6
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• pp.14-18
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• 2019

The conductivity of a semiconductor is primarily determined by the carriers. To achieve higher conductivity, the number of carriers should be high, and an energy trap level is created so that the carriers can cross the forbidden zone with low energy. Carriers have a crystalline binding structure, and interfacial mismatching tends to make them less conductive. In general, high-concentration doping is typically used to increase mobility. However, higher conductivity is also observed in non-orthogonal conjugation structures. In this study, the phenomena of higher conductivity and higher mobility were observed with space charge limiting current due to tunneling phenomena, which are different from trapping phenomena. In an atypical structure, the number of carriers is low, the resistance is high, and the on/off characteristics of capacitances are improved, thus increasing the mobility. ZTO thin film improved the on/off characteristics of capacitances after heat treating at $150^{\circ}C$. In charging and discharging tests, there was a time difference in the charge and discharging shapes, there was no distinction between n and p type, and the bonding structure was amorphous, such as in the depletion layer. The amorphous bonding structure can be seen as a potential barrier, which is also a source of space charge limiting current and causes conduction as a result of tunneling. Thus, increased mobility was observed in the non-structured configuration, and the conductivity increased despite the reduction of carriers.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.34 no.4
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• pp.144-152
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• 1985

This paper temperature gradient thermally stimulated surface potentian (TG-TSSP) in measurements are applied to the study of the polarity of trapped and ionic carriers in cross-linked polyethylene (XLPE) filsm. In the thermally stimulated current in uniform temperature (TSC) of XLPE five peaks appear as indicated of the A B C D and E. In this paper A (at about -120$^{\circ}C$) D (at about 70$^{\circ}C$) and E (at about 110$^{\circ}C$) peaks are investigated. A peak is due to the biassing voltage and biassing temperature. Appear in to the glass transition temperature territory and caused in to the polarization of dipole. D peak is due to the depolarization of ionic space charge and E peak due to the detrapping of carriers injected from the electrodes. TG-TSSP and TSSP are measured to study the polarity of ionic carrier (D peak). In the unsatureated region of ionic space charge polarization, TG-TSSP is lower than TSSP during the initial stage of heating. Result of the experiment for E peak, TG-TSSP is higher than TSSP during the initial stage of heating and these results do not depend on the polarity of biassing voltage, and E peak is concerned with positive carriers (Holes).

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.72-72
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• 2011

Surface science is intrinsically related to the performance of solar cells. In solar cells the generation and collection of charge carriers determines their efficiency. Effective transport of charge carriers across interfaces and minimization of their recombination at surfaces and interfaces is of utmost importance. Thus, the chemistry at the surfaces and interfaces of these devices must be determined, and related to their performance. In this talk we will discuss the role of two important interfaces, First, the role of surface passivation is very important in limiting the rate of carrier of recombination. Here we will combine x-ray photoelectron spectroscopy of the surface of a Si device with electrical measurements to ascertain what factors determine the quality of a solar cell passivation. In addition, the quality of the heterojunction interface in a ZnSe/CdTe solar cell affects the output voltage of this device. X-ray photoelectron spectroscopy gives some insight into the composition of the interface, while ultraviolet photoemission yields the relative energy of the two materials' valence bands at the junction, which controls the open circuit voltage of the solar cell. The relative energies of ZnSe and CdTe at the interface is directly affected by the material quality of the interface through processing.

• Proceedings of the Safety Management and Science Conference
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• 2012.04a
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• pp.371-380
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• 2012

Although all costs concerned in transportation be separated by region and each terms and conditions of Incoterms that state cleary them who have to pay the charges. But, almost lcl exporters donot want to pay their charges the carriers at loading port eventhough they make the contracts with the importer as FOB and CFR of Incoterms. And the carrier have been do not bill the FOB charges to the shipper. Now, there are no more Incoterms in LCL transportation. So, the importer have been payed loading port charges twice, first, the contract with the shipper, secondly, through the destination charge. These problems make decreasing of trading volume and increasing of logistics costs. We suggest every traders and carriers separate the costs as per the price terms and conditions of incoterms and bill/receive the costs separated the trader who have to pay the charges as per their price terms. It will bring mutual success in the world and increasing trade.

• Journal of the Optical Society of Korea
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• v.11 no.3
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• pp.133-137
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• 2007

We compare electroabsorption modulators (EAMs) with multiple quantum wells (MQWs) based on InGaAs(P)/InP and InGa(Al)As/InAlAs material systems. We carefully choose the quantum-well structures so that the structures based on different material systems have similar band-offset energies and excition-peak wavelengths. Assuming the same light wavelength of $1.55{\mu}m$, we show the transfer functions of EAMs with each quantum-well structure and calculate the escape times of photogenerated charge carriers. As the heavy-hole escape time of the quantum well based on InGaAs(P)/InP is much longer than those of photogenerated charge carriers of InGa(Al)As/InAlAs, the EAM based on the InGa(Al)As/InAlAs material seems to be more suitable for high-optical-power operation.