• Polymer(Korea)
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• v.25 no.5
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• pp.719-727
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• 2001

Recently it was found that the charge carrier transport properties are significantly enhanced due to effective intermolecular $\pi$-orbital overlapping and low disorder of hopping sites caused by self-organization of liquid crystal molecules. In this study, the xerographic properties of a double-layer photoconductor doped with nematic liquid crystal, 4-pentyl-4'-cyanoterphenyl (5CT), as a charge-carrier transport material to enhance the charge-tarrier mobility were investigated. From the results of measured surface voltage properties for the photoconductor doped with various concentrations of liquid crystal, 5CT, the initial voltage was found to increase with the concentration of 5CT and the dark decay decreased with the concentration of 5CT. The highest sensitivity was obtained at a specific concentration, 40wt% 5CT. The fluorescence behavior of the carrier transport layer (CTL) was also investigated. It was found that the charge-carrier transport properties of the organic photoconductor depend on the charge-carrier transport properties of the complex. The TNF : 5CT (40 wt%) and OXD : 5CT (40 wt%)samples showed the highest sensitivity because the greatest charge transport complex was termed between the charge-carrier transport materials in these samples.

• Archives of Metallurgy and Materials
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• v.65 no.3
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• pp.1063-1067
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• 2020

Dynamic charge carrier transport behavior in the zirconium (Zr) oxide was investigated based on the frequency-dependent capacitance-voltage (C-V) and temperature-dependent current-voltage (I-V) measurements. The Zr oxide was formed on the ZIRLO and newly developed zirconium-based alloy (NDZ) by corrosion in the PWR-simulated loop at 360℃. The corrosion test for 90 days showed that the NDZ exhibits better corrosion resistance than ZIRLO alloy. Based on the C-V measurement, dielectric constant values for the Zr oxide was estimated to be 11.28 and 11.52 for the ZIRLO and NDZ. The capacitance difference between low and high frequency was larger in the ZIRLO than in the NDZ, which was attributed to more mobile electrical charge carriers in the oxide layer on the ZIRLO alloy. The current through the oxide layers on the ZIRLO increased more drastically with increasing temperature than on the NDZ, which indicating that more charge trap sites exist in the ZIRLO than in NDZ. Based on the dynamic charge carrier transport behavior, it was concluded that the electrical charge carrier transport within the oxide layers was closely related with the corrosion behavior of the Zr alloys.

• Journal of the Korean Institute of Telematics and Electronics
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• v.15 no.2
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• pp.19-21
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• 1978

The electrical drift mobility of charge carrier of Cholesteryl Benzoate was measured by Polarity inversion method in the temperature range 140~ 185$^{\circ}C$. with a view to revealing the mechanism of charge carrier transport. The electrical drift mobility of charge carrier of that increased from 2.5$\times$10-7$\textrm{cm}^2$/V.sec to 2.0$\times$10-6$\textrm{cm}^2$/v.sec as the temperature increased. As a result of the experiment, the mechanism of current transport is believed to be ionic mechanism.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.473-477
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• 1999

Xerographic properties of double-layer photoconductor doped with 4-butyl-4'-methoxyazobenzene (BMAB) as charge-carrier transport material were investigated. BMAB can undergo reversible trans-cis isomerization by light with appropriate wavelength. In the results of measured surface voltage properties for photoconductor doped with BMAB, TNF: BMAB(4-wt%) sample with trans form showed the lowest dark decay, the lowest residual voltage, and the highest sensitivity among cis form. The trans isomer of BMAB has ordering orientation because the molecule possesses a rodlike shape, while the cis isomer has random orientation due to its bent shape. Therefore the molecular arrangement of trans form enhanced charge-carrier transport mobility.

• Macromolecular Research
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• v.17 no.11
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• pp.894-900
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• 2009

This study examined the charge carrier photogeneration and hole transport properties of blends of poly (9-vinylcarbazole) (PVK), $\pi$-conjugated polymer, with different weight proportions (0~29.4 wt%) of (PEA)$VOPO_4{\cdot}H_2O$ (PEA: phenethylammonium cation), a novel organic-inorganic hybrid material, using IR, UV-Vis, and energy dispersive spectroscopy (EDS), thermogravimetric analysis (TGA), steady state photocurrent (SSPC) measurement, and atomic force microscopy (AFM). The SSPC measurements showed that the photocurrent of PVK was reduced by approximately three orders of magnitude by the incorporation of a small amount (~12.5 wt%) of (PEA) $VOPO_4{\cdot}H_2O$, suggesting that hole transport occurred through the PVK carbazole groups, whereas a reverse trend was observed at high proportions (>12.5 wt%) of (PEA)$VOPO_4{\cdot}H_2O$, suggesting that transport occurred via (PEA)$VOPO_4{\cdot}H_2O$ molecules. The transition to a trap-controlled hopping mechanism was explained by the difference in ionization potential and electron affinity of the two compounds as well as the formation of charge percolation threshold pathways.

• Coupled systems mechanics
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• v.6 no.1
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• pp.75-96
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• 2017

As electron donor/acceptor materials for organic photovoltaic cells, small-molecules donors/acceptor are attracting more and more attention. In this work, we investigated the electronic structures, electrochemical properties, and charge carrier transport properties of four recently-synthesized small-molecule donors/acceptor, namely, DPDCPB (A), DPDCTB (B), DTDCPB (A1), and DTDCTB (B1), by a series of ab initio calculations. The calculations look into the electronic structure of singly oxidized and reduced molecules, the first anodic and cathodic potentials, and the electrochemical gaps. Results of our calculations were in accord with those from experiments. Using Marcus theory, we also computed the reorganization energies of hole/electron hoppings, as well as hole/electron transfer integrals of multiple possible molecular dimer configurations. Our calculations indicated that the electron/hole transport properties are very sensitive to the relative separations/orientations between neighboring molecules. Due to high reorganization energies for electron hopping, the hole mobilities in the molecular crystals are at least an order of magnitude higher than the electron mobilities.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.497-500
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e,g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1418-1420
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• 2008

In this paper, the light emitting efficiency, spectrum, and the lifetime of the phosphorescent devices, whose emission characteristics are strongly dominated not only by the energy transfer but also by the charge carrier trapping induced by the emissive dopant, are explained by differences in the energy levels of the host, dopant, and nearby transport layers. On the basis of our finding on device performance and photocurrent measurement data by time-of-flight (TOF), we investigated the effect of the difference of carrier trapping dopant and properties of the host materials on the efficiency roll-off of phosphorescent organic light emitting diode (OLED), along with a physical interpretation and practical design scheme, such as a multiple host system, for improving the efficiency and lifetime of devices.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.148-149
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• 2002

In recent years, semiconductor spintronics has been rapidly developing due to potential device applications, in which the spin of charge carriers (electrons or holes) provides novel functionalities to carry signals and process information. Diluted magnetic semiconductors (DMSs) are well known to exhibit intriguing properties such as carrier-mediated ferromagnetism and spin-dependent transport resulting from the coupling between the charge transport states and the magnetic moments (spin) [1-3]. (omitted)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.497-500
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e.g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current. 缀Ѐ㘰〻ሀ䝥湥牡氠瑥捨湯汯杹