• Title/Summary/Keyword: charge carrier transport

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Charge-Carrier Transport Properties and Fluorescence Behaviors Depending on Charge Transport Complex of Organic Photoconductor Containing Liquid Crystal (액정을 함유하는 유기 광도점체의 전하 수송착체에 의한 Charge-Carrier수송 특성과 형광거동)

  • Lee, Bong; Jung, Sung-Young;Moon, Doo-Dyung
    • Polymer(Korea)
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    • v.25 no.5
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    • pp.719-727
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    • 2001
  • Recently it was found that the charge carrier transport properties are significantly enhanced due to effective intermolecular $\pi$-orbital overlapping and low disorder of hopping sites caused by self-organization of liquid crystal molecules. In this study, the xerographic properties of a double-layer photoconductor doped with nematic liquid crystal, 4-pentyl-4'-cyanoterphenyl (5CT), as a charge-carrier transport material to enhance the charge-tarrier mobility were investigated. From the results of measured surface voltage properties for the photoconductor doped with various concentrations of liquid crystal, 5CT, the initial voltage was found to increase with the concentration of 5CT and the dark decay decreased with the concentration of 5CT. The highest sensitivity was obtained at a specific concentration, 40wt% 5CT. The fluorescence behavior of the carrier transport layer (CTL) was also investigated. It was found that the charge-carrier transport properties of the organic photoconductor depend on the charge-carrier transport properties of the complex. The TNF : 5CT (40 wt%) and OXD : 5CT (40 wt%)samples showed the highest sensitivity because the greatest charge transport complex was termed between the charge-carrier transport materials in these samples.

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Electrical Drift Mobility in the Cholesteryl Benzoate (Cholestric 액정 Cholesteryl Benzoate에서 Drift Mobility측정)

  • 강태원;김화택
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.15 no.2
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    • pp.19-21
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    • 1978
  • The electrical drift mobility of charge carrier of Cholesteryl Benzoate was measured by Polarity inversion method in the temperature range 140~ 185$^{\circ}C$. with a view to revealing the mechanism of charge carrier transport. The electrical drift mobility of charge carrier of that increased from 2.5$\times$10-7$\textrm{cm}^2$/V.sec to 2.0$\times$10-6$\textrm{cm}^2$/v.sec as the temperature increased. As a result of the experiment, the mechanism of current transport is believed to be ionic mechanism.

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Charge-carrier Transport Properties of Organic Photoconductor by Photo-isomerization of Liquid Crystal with Azo Group (Azo기를 가지는 액정의 광 이성화에 따른 유기 광전도체의 carrier 수송 특성)

  • Lee, Bong;Sung, Jung-Hee;Moon, Chang-Kwon
    • Korean Journal of Materials Research
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    • v.9 no.5
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    • pp.473-477
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    • 1999
  • Xerographic properties of double-layer photoconductor doped with 4-butyl-4'-methoxyazobenzene (BMAB) as charge-carrier transport material were investigated. BMAB can undergo reversible trans-cis isomerization by light with appropriate wavelength. In the results of measured surface voltage properties for photoconductor doped with BMAB, TNF: BMAB(4-wt%) sample with trans form showed the lowest dark decay, the lowest residual voltage, and the highest sensitivity among cis form. The trans isomer of BMAB has ordering orientation because the molecule possesses a rodlike shape, while the cis isomer has random orientation due to its bent shape. Therefore the molecular arrangement of trans form enhanced charge-carrier transport mobility.

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Charge Carrier Photogeneration and Hole Transport Properties of Blends of a $\pi$-Conjugated Polymer and an Organic-Inorganic Hybrid Material

  • Han, Jung-Wook;An, Jong-Deok;Jana, R.N.;Jung, Kyung-Na;Do, Jung-Hwan;Pyo, Seung-Moon;Im, Chan
    • Macromolecular Research
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    • v.17 no.11
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    • pp.894-900
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    • 2009
  • This study examined the charge carrier photogeneration and hole transport properties of blends of poly (9-vinylcarbazole) (PVK), $\pi$-conjugated polymer, with different weight proportions (0~29.4 wt%) of (PEA)$VOPO_4{\cdot}H_2O$ (PEA: phenethylammonium cation), a novel organic-inorganic hybrid material, using IR, UV-Vis, and energy dispersive spectroscopy (EDS), thermogravimetric analysis (TGA), steady state photocurrent (SSPC) measurement, and atomic force microscopy (AFM). The SSPC measurements showed that the photocurrent of PVK was reduced by approximately three orders of magnitude by the incorporation of a small amount (~12.5 wt%) of (PEA) $VOPO_4{\cdot}H_2O$, suggesting that hole transport occurred through the PVK carbazole groups, whereas a reverse trend was observed at high proportions (>12.5 wt%) of (PEA)$VOPO_4{\cdot}H_2O$, suggesting that transport occurred via (PEA)$VOPO_4{\cdot}H_2O$ molecules. The transition to a trap-controlled hopping mechanism was explained by the difference in ionization potential and electron affinity of the two compounds as well as the formation of charge percolation threshold pathways.

Electronic and carrier transport properties of small molecule donors

  • Valencia-Maturana, Ramon;Pao, Chun-Wei
    • Coupled systems mechanics
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    • v.6 no.1
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    • pp.75-96
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    • 2017
  • As electron donor/acceptor materials for organic photovoltaic cells, small-molecules donors/acceptor are attracting more and more attention. In this work, we investigated the electronic structures, electrochemical properties, and charge carrier transport properties of four recently-synthesized small-molecule donors/acceptor, namely, DPDCPB (A), DPDCTB (B), DTDCPB (A1), and DTDCTB (B1), by a series of ab initio calculations. The calculations look into the electronic structure of singly oxidized and reduced molecules, the first anodic and cathodic potentials, and the electrochemical gaps. Results of our calculations were in accord with those from experiments. Using Marcus theory, we also computed the reorganization energies of hole/electron hoppings, as well as hole/electron transfer integrals of multiple possible molecular dimer configurations. Our calculations indicated that the electron/hole transport properties are very sensitive to the relative separations/orientations between neighboring molecules. Due to high reorganization energies for electron hopping, the hole mobilities in the molecular crystals are at least an order of magnitude higher than the electron mobilities.

Interfacial Properties of a-Se Thick Films to Solve Charge Trap and Injection Problems (전하 트랩 및 주입 문제를 해결하기 위한 비정질 셀레늄 필름의 계면 특성)

  • 조진욱;최장용;박창희;김재형;이형원;남상희;서대식
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.497-500
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    • 2001
  • Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e,g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current.

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Controlled Charge Carrier Transport and Recombination for Efficient Electrophosphorescent OLED

  • Chin, Byung-Doo;Choi, Yu-Ri;Eo, Yong-Seok;Yu, Jai-Woong;Baek, Heume-Il;Lee, Chang-Hee
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1418-1420
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    • 2008
  • In this paper, the light emitting efficiency, spectrum, and the lifetime of the phosphorescent devices, whose emission characteristics are strongly dominated not only by the energy transfer but also by the charge carrier trapping induced by the emissive dopant, are explained by differences in the energy levels of the host, dopant, and nearby transport layers. On the basis of our finding on device performance and photocurrent measurement data by time-of-flight (TOF), we investigated the effect of the difference of carrier trapping dopant and properties of the host materials on the efficiency roll-off of phosphorescent organic light emitting diode (OLED), along with a physical interpretation and practical design scheme, such as a multiple host system, for improving the efficiency and lifetime of devices.

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MAGNETOTRANSPORT IN AN N-TYPE DILUTED MAGNETIC SEMICONDUCTOR: (Ga,Mn)N

  • Lee, K. I.;Lee, J. M.;J. Y. Chang;S. H. Han;Lee, W. Y.;M. H. Ham;J. M. Myoung
    • Proceedings of the Korean Magnestics Society Conference
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    • 2002.12a
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    • pp.148-149
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    • 2002
  • In recent years, semiconductor spintronics has been rapidly developing due to potential device applications, in which the spin of charge carriers (electrons or holes) provides novel functionalities to carry signals and process information. Diluted magnetic semiconductors (DMSs) are well known to exhibit intriguing properties such as carrier-mediated ferromagnetism and spin-dependent transport resulting from the coupling between the charge transport states and the magnetic moments (spin) [1-3]. (omitted)

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Interfacial Properties of a-Se Thick Films to Solve Charge Trap and Injection Problems (전하 트랩 및 주입 문제를 해결하기 위한 비정질 셀레늄 필름의 계면 특성)

  • Cho, J.W.;Choi, J.Y.;Park, C.H.;Kim, J.H.;Lee, H.W.;Nam, S.H.;Seo, D.S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.497-500
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    • 2001
  • Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e.g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current. 缀Ѐ㘰〻ሀ䝥湥牡氠瑥捨湯汯杹

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Time of Fight Resonace Investigation of Amorphous Selenium Films (비정질 셀레늄 필름의 공명 비행시간 조사)

  • Park, J.K.;Park, S.K.;Lee, D.G.;Choi, J.Y.;Ahn, S.H.;Eun, C.K.;Nam, S.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.501-504
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    • 2001
  • We used time-of-flight method to analyze transport properties of charge carrier which is produced by X-ray exposure. It is the research of charge transport and specific property of trap that is performed in direct digital x-ray image receptor. But the results shows us different measurement value of electron and charge drift mobility and it is difficult to precise analysis about charge transport properties and trap mechanism. We measured transit time and drift mobility of charge carriers using time-of-flight method to evaluate the correlation of a-Se thickness change and electric field. We made a testing glass with a-Se of 400 ${\mu}m$ thickness on coming glass using thermoevaporation method and built Au electrode with 300nm, $2{\varphi}$ on both sides of a-Se, As a result of this experiment, electron and hole transit time was each $229.17{\mu}s$ and $8.73{\mu}s$ at $10V/{\mu}m$ electric field and Drift mobility was each $0.00174 cm^{2}/V{\cdot}s$, $0.04584cm^{2}/V{\cdot}s$.

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