• 공업화학
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• 제16권5호
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• pp.698-704
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• 2005

구형교반조 및 원통교반조에서 paddle 임펠러의 교반소요동력을 넓은 범위의 레이놀즈수 영역에서 측정하였다. 구형교반조는 교반조 높이가 직경과 같고, 구형교반조의 체적과 같은 원통교반조의 겉보기 직경을 이용하여 구형교반조 및 원통교반조 모두에 적용할 수 있는 교반소요동력 상관식을 구했다. 이 상관식은 Nagata 등 및 Hixson 등의 실험결과에도 양호하게 상관되었다. 또한 임계레이놀즈수는 본 상관식에서 얻은 층류영역에서 난류영역으로의 전이에 관한 계수 $C_{tr}$에 잘 상관되었다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(1)
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• pp.211-214
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• 2002

In this paper, we present a simple method for characterizing a rectangular waveguide to circular waveguide transition Three standard loads consisting of a short circuit, an offset short circuit 1, and an offset short circuit 2 are sequentially connected to the circular waveguide port and the reflection coefficient at port 1 Is measured for each case. From known reflection coefficients, of standard loads and measured reflection coefficients, the scattering matrix of the transition Is obtained. The proposed method Is verified by the numerical experiment using a commercial software HFSS and by measurments of a actual rectangular-to-circular waveguide transition.

• 한국산업융합학회 논문집
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• 제9권4호
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• pp.247-253
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• 2006

Power consumption for double-stage paddle impeller in spherical and cylindrical agitated vessel was measured over a wide range of Reynolds number from laminar to turbulent flow regions. The power correlation was obtained which was applied to both spherical and cylindrical vessel, when the apparent diameter of the spherical vessel was equal to the diameter of the cylindrical vessel which had a height equal to its diameter and had the same volume as the spherical vessel. The power consumption for the double-stage impeller was dependent upon the distance of among the impeller in the agitated vessels, as follows: $$f/2={\frac{C_L}{Re_G}}+{\frac{Ct}{2}}({\frac{C_tr}{Re_g}}+Re_g)^{-m}$$

• 한국표면공학회지
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• 제36권2호
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• pp.135-140
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• 2003

The difference in lattice parameter and thermal expansion coefficient between GaN and Si which results in many defects into the grown GaN is larger than that between GaN and sapphire. In order to obtain high quality GaN films on Si substrate, it is essential to understand growth characteristics of GaN. In this study, GaN layers were grown on Si(111) substrates by MOCVD at three different GaN growth temperatures ($900^{\circ}C$, $1,000^{\circ}C$ and $1,100^{\circ}C$), using AlN and LT-GaN buffer layers. Using TEM, we carried out the comparative investigation of growth characteristics of GaN by characterizing lattice coherency, crystallinity, orientation relationship and defects formed (transition region, stacking fault, dislocation, etc). The localized region with high defect density was formed due to the lattice mismatch between AlN buffer layer and GaN. As the growth temperature of GaN increases, the defect density and surface roughness of GaN are decreased. In the case of GaN grown at $1,100^{\circ}$, growth thickness is decreased, and columns with out-plane misorientation are formed.