• Applied Chemistry for Engineering
• /
• v.16 no.5
• /
• pp.698-704
• /
• 2005

Power consumption for paddle impeller in spherical and cylindrical agitated vessel was measured over a wide range of Reynolds number from laminar to turbulent flow regions. The power correlation was obtained for both spherical and cylindrical vessels, where the apparent diameter of the spherical vessel was equal to the diameter of the cylindrical vessel (height equal to its diameter and had the same volume as the spherical vessel). The power consumption well correlated with the experimental results of Nagata, et al. and Hixson-Baum. Also the critical Reynolds numbers was directly related to the transition coefficient $C_{tr}$ characterizing the transition from a laminar to a turbulent flow region in the correlation proposed here.

• Proceedings of the IEEK Conference
• /
• 2002.06a
• /
• pp.211-214
• /
• 2002

In this paper, we present a simple method for characterizing a rectangular waveguide to circular waveguide transition Three standard loads consisting of a short circuit, an offset short circuit 1, and an offset short circuit 2 are sequentially connected to the circular waveguide port and the reflection coefficient at port 1 Is measured for each case. From known reflection coefficients, of standard loads and measured reflection coefficients, the scattering matrix of the transition Is obtained. The proposed method Is verified by the numerical experiment using a commercial software HFSS and by measurments of a actual rectangular-to-circular waveguide transition.

• Journal of the Korean Society of Industry Convergence
• /
• v.9 no.4
• /
• pp.247-253
• /
• 2006

Power consumption for double-stage paddle impeller in spherical and cylindrical agitated vessel was measured over a wide range of Reynolds number from laminar to turbulent flow regions. The power correlation was obtained which was applied to both spherical and cylindrical vessel, when the apparent diameter of the spherical vessel was equal to the diameter of the cylindrical vessel which had a height equal to its diameter and had the same volume as the spherical vessel. The power consumption for the double-stage impeller was dependent upon the distance of among the impeller in the agitated vessels, as follows: $$f/2={\frac{C_L}{Re_G}}+{\frac{Ct}{2}}({\frac{C_tr}{Re_g}}+Re_g)^{-m}$$

• Journal of the Korean institute of surface engineering
• /
• v.36 no.2
• /
• pp.135-140
• /
• 2003

The difference in lattice parameter and thermal expansion coefficient between GaN and Si which results in many defects into the grown GaN is larger than that between GaN and sapphire. In order to obtain high quality GaN films on Si substrate, it is essential to understand growth characteristics of GaN. In this study, GaN layers were grown on Si(111) substrates by MOCVD at three different GaN growth temperatures ($900^{\circ}C$, $1,000^{\circ}C$ and $1,100^{\circ}C$), using AlN and LT-GaN buffer layers. Using TEM, we carried out the comparative investigation of growth characteristics of GaN by characterizing lattice coherency, crystallinity, orientation relationship and defects formed (transition region, stacking fault, dislocation, etc). The localized region with high defect density was formed due to the lattice mismatch between AlN buffer layer and GaN. As the growth temperature of GaN increases, the defect density and surface roughness of GaN are decreased. In the case of GaN grown at $1,100^{\circ}$, growth thickness is decreased, and columns with out-plane misorientation are formed.