• Journal of the Korean Regional Science Association
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• v.8 no.2
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• pp.1-9
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• 1992

One of the problems associated with the current system of land development projects implemented by the public sector in Korea is that various service facilities are not ready in time for the occupation of residential dwelling. A major cause of the problem is the lack of financial arrangements which would smooth the cash-flow of the suppliers of the facilities during the project period. In this paper we present two schemes which will contribute to the optimal provision of service facilities by easing the financial constraint facing the land developers and suppliers of the facilities. The first scheme involves channeling a fraction of profits from a land development project and of the proceeds of mandatory sales of Type II National Housing Bonds as a loan to the suppliers of the service facilities. The second scheme considers the participation of the private sector in the project as a member of a consortium comprising the Korea Land development Corporation, the National Housing Fund, and private developers. It is proved that each scheme is superior to the current system. as well as entailing a very small cost.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.3
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• pp.46-55
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• 1998

This stud demonstrates the profiles of heavy ions (As, Sb) in silicon by high energy (1~10 MeV) implantation. Implanted profiles were measured by SIMS (Cameca 4f) and compared with simulation results (TRIM) program and analytical description method using Pearson function). The experimental results have a little bit deviation with simulation data in the case of As high energy implatation. But in the case of Sb, the experimental results are in good agreement with TRIM data. SIMS profiles are perfectly fitted with a analytical description method only using one pearson function in Sb implantation. but in the case of As, fitted profilesshow with a little bit deviations by channeling effects of SIMS profiles. Thermal annealing for electrical activation of implanted ions was carried out by furnace annealing and RTA(Rapid Thermal Annealing). Concentration-depth profile after heat treatement were measured by SR(Spreading Resistance) method.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.11
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• pp.113-121
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• 1993

In the formation of the shallow p$^{+}$-n junction, the preamorphization method by As$^{+}$ ions was applied in order to avoid the boron channeling effect which is occured during the B$^{+}$ implantation especially with low energy. By As$^{+}$ pre-implant with 60KeV energy and 2*10$^{14}$ cm$^{-2}$ dose, the channelinf of B$^{+}$ ions implanted with 10keV/1.5*10$^{14}$ cm$^{-2}$ can be avoded completely. After the RTA of 1050.deg. C and 10sec, the junction depth was 0.14.mu.m, the leakage current was 20nA/cm$^{2}$(at-5V bias) and the sheet resistance was 107.OMEGA./ㅁ. And the preamorphized Si layer was changed into the perfect crystal si after the RTA.r the RTA.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.43-50
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• 1993

Three-dimensional simulator for the ion implantation process is developed. The simulator based on an analytical model which would be a choice with high computational efficiency and accuracy. This is an important issue for the simulation of a numerous number of processing steps required in the fabrication of ULSI or GSI. The model can explain scattering and bulk channeling mechanism (1D). It can also explain depth dependent lateral diffusion effect(2D) and mask effect(3D). The model is consist of one-dimensional JPD(Joined Pearson Distribution) function and two-dimensional modified Gaussian functions. Final implanted profiles under typical mask structures such as hole, line and island structure are obtained with varying ion species.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.97-98
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• 2006

High current behaviors of extended drain n-type metal-oxide-semiconductor field effects transistor (EDNMOS) with double polarity source (DPS) for electrostatic discharge (ESD) protection are analyzed. Simulation based contour analyses reveal that combination of bipolar junction transistor operation and deep electron channeling induced by high electron injection gives rise to the second on-state. Therefore, the deep electron channel formation needs to be prevented in order to realize stable and robust ESD protection performance. Based on our analyses, general methodology to avoid the double snapback and to realize stable ESD protection is to be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.97-98
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• 2006

High current behaviors of the grounded gate extended drain N-type metal-oxide-semiconductor field effects transistor (GG_EDNMOS) electro-static discharge (ESD) protection devices are analyzed. Simulation based contour analyses reveal that combination of BJT operation and deep electron channeling induced by high electron injection gives rise to the 2-nd on-state. Thus, the deep electron channel formation needs to be prevented in order to realize stable and robust ESD protection performance. Based on our analyses, general methodology to avoid the double snapback and to realize stable ESD protection is to be discussed.

• Nuclear Engineering and Technology
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• v.30 no.6
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• pp.485-495
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• 1998

Migration characteristics of tracers in a rock fracture in a case of line-source and line-collection was studied. The fracture plane was discretized into a square mesh to which variable apertures were assigned. The spatially varying apertures of a fracture were generated using a geostatistical method, based on a given aperture probability density distribution and a specified spatial correlation length. The flow potential and pressure at each node were computed. Calculations showed that fluid flow occurs predominantly through a few preferred paths. Hence, the large range of apertures in the fracture gives rise to flow channeling. The solute transport was calculated using a particle tracking method. The migration plumes of tracer between injection line and withdrawal line are displayed in contour plots. The elution curves are shown to be controlled by the aperture density distribution and to be insensitive to statistical realization and spatial correlation length.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.26-26
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• 2000

High quality epitaxial Y2O3 thin films were prepared on Si(111) and (001) substaretes by using ion beam assisted deposition. As a substrate, clean and chemically oxidized Si wafers were used and the effects of surface state on the film crystallinity were investigated. The crystalline quality of the films were estimated by x-ray scattering, rutherford backscattering spectroscopy/channeling, and high-resolution transmission electron microscopy (HRTEM). The interaction between Y and Si atoms interfere the nucleation of Y2O3 at the initial growth stage, it could be suppressed by the interface SiO2 layer. Therefore, SiO2 layer of the 4-6 layers, which have been known for hindering the crystal growth, could rather enhance the nucleation of the Y2O3 , and the high quality epitaxial film could be grown successfully. Electrical properties of Y2O3 films on Si(001) were measured by C-V and I-V, which revealed that the oxide trap charge density of the film was 1.8$\times$10-8C/$\textrm{cm}^2$ and the breakdown field strength was about 10MV/cm.

• The Journal of Asian Finance, Economics and Business
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• v.8 no.12
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• pp.39-50
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• 2021

We investigate competition and its impact on borrowers' indebtedness (BI) in South Asian microfinance. Our empirical investigations are based on a comprehensive panel dataset of 355 MFIs located in seven countries in South Asia. The empirical results revealed that microfinance in South Asia is imperfectly competitive and the existing industry shows a monopolistic competition during the period under consideration. Also, the competition increased after the global financial crisis (GFC) in 2007-08 which implies that microfinance uses hostile lending behavior through the adverse selection that is highly risky and it can induce repayment crisis. The empirical findings also show that increased competition has significant negative effects on borrowers' indebtedness, particularly in large-scale and regulated microfinance organizations (MFIs). Instead of using equity financing, debt financing could be a better option. Finally, we find that while competition seems to have some positive effects in economic discourse by channeling technological improvements in products and services, its negative effects in microfinance outweigh the benefits over costs, particularly in poverty-stricken nations. The findings are helpful for the policymakers, microfinance industry, investors, borrowers, and Central Bank of South Asian markets.

• Korean Journal of Organic Agriculture
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• v.26 no.4
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• pp.571-583
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• 2018

The purpose of this study is to explore the dynamic properties of causality and asymmetric price transmission in the distributional channel of the tomato market in Korea. Using the wholesale and retail price series of the tomato market, we obtain the following results. First, the price transmission mechanism reveals the causal relationship channeling from the wholesale price to the retail price. Second, we find an asymmetric price transmission from the analysis using the threshold partial adjustment model. The retail price responds strongly when the wholesale price increases. On the other hand, the retail price shows sluggish adjustment when the wholesale price decreases.