Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2006.10a
- /
- Pages.97-98
- /
- 2006
Characteristics of Extended Drain N-type MOSFET with Double Polarity Source for Electrostatic Discharge Protection
정전기 보호를 위한 이중 극성소스를 갖는 EDNMOS 소자의 특성
- Seo, Yong-Jin (Daebul University) ;
- Kim, Kil-Ho (Leadis Technology) ;
- Park, Sung-Woo (Daebul University) ;
- Lee, Sung-Il (Daebul University) ;
- Han, Sang-Jun (Daebul University) ;
- Han, Sung-Min (Daebul University) ;
-
Lee, Young-Keun
(Daebul University)
;
- Lee, Woo-Sun (Chosun University)
- 서용진 (대불대학교 전기전자공학과) ;
- 김길호 (리디스 테크놀로지) ;
- 박성우 (대불대학교 전기전자공학과) ;
- 이성일 (대불대학교 전기전자공학과) ;
- 한상준 (대불대학교 전기전자공학과) ;
- 한성민 (대불대학교 전기전자공학과) ;
-
이영균
(대불대학교 전기전자공학과)
;
- 이우선 (조선대학교 전기공학과)
- Published : 2006.10.27
Abstract
High current behaviors of extended drain n-type metal-oxide-semiconductor field effects transistor (EDNMOS) with double polarity source (DPS) for electrostatic discharge (ESD) protection are analyzed. Simulation based contour analyses reveal that combination of bipolar junction transistor operation and deep electron channeling induced by high electron injection gives rise to the second on-state. Therefore, the deep electron channel formation needs to be prevented in order to realize stable and robust ESD protection performance. Based on our analyses, general methodology to avoid the double snapback and to realize stable ESD protection is to be discussed.
Keywords