• Applied Science and Convergence Technology
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• 제24권3호
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• pp.53-59
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• 2015

The field-effect transistors (FETs) with a graphene-based p-n junction channel were fabricated using the patterned self-assembled monolayers (SAMs). The self-assembled 3-aminopropyltriethoxysilane (APTES) monolayer deposited on $SiO_2$/Si substrate was patterned by hydrogen plasma using selective coating poly-methylmethacrylate (PMMA) as mask. The APTES-SAMS on the $SiO_2$ surface were patterned using selective coating of PMMA. The APTES-SAMs of the region uncovered with PMMA was removed by hydrogen plasma. The graphene synthesized by thermal chemical vapor deposition was transferred onto the patterned APTES-SAM/$SiO_2$ substrate. Both p-type and n-type graphene on the patterned SAM/$SiO_2$ substrate were fabricated. The graphene-based p-n junction was studied using Raman spectroscopy and X-ray photoelectron spectroscopy. To implement low voltage operation device, via ionic liquid ($BmimPF_6$) gate dielectric material, graphene-based p-n junction field effect transistors was fabricated, showing two significant separated Dirac points as a signature for formation of a p-n junction in the graphene channel.

• 대한기계학회논문집B
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• 제28권6호
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• pp.682-687
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• 2004

Y-junction microchannels are widely used as a flew mixer. Fluids are entered from two branch channels and merged together at a combined channel. In this study, we suggest a simple method to create the fluid digitization using flow instability phenomena. Two immiscible liquids (water/oil) are infused continuously to each Y-junction inlets. Because of the differences in fluid and flow properties at the interface, oil droplet is formed automatically followed by flow instability. In order to clarify the hydrodynamic aspects involved in oil droplet formation, a quantitative flow visualization study has performed. Highly resolved velocity vector fields are obtained by a micro-PIV technique, so that detail flow structures around the droplet are illustrated. In this study, fluorescent particles were mixed with water only for visualization of oil droplet and velocity field measurement in water flow.

• 전기전자학회논문지
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• 제22권3호
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• pp.565-569
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• 2018

For the conventional power MOSFET (metal-oxide semiconductor field-effect transistor) device structure, there exists a tradeoff relationship between specific on-state resistance (Ron,sp) and breakdown voltage (BV). In order to overcome this tradeoff, a super-junction (SJ) trench MOSFET (TMOSFET) structure with uniform or non-uniform doping concentration, which decreases linearly in the vertical direction from the N drift region at the bottom to the channel at the top, for an optimal design is suggested in this paper. The on-state resistance of $0.96m{\Omega}-cm2$ at the SJ TMOSFET is much less than that at the conventional power MOSFET under the same breakdown voltage of 100V. A design methodology for the edge termination is proposed to achieve the same breakdown voltage and on-state resistance as the main body of the super-junction TMOSFET by using of the SILVACO TCAD 2D device simulator, Atlas.

• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.910-917
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• 2009

We have designed a new structures of Junction Field Effect Transistor(JFET) using SILVACO simulation to improve electrical properties and process reliability. The device structure and process conditions of Si control JFET(Si JFET) were determined to set cut off voltage and drain current(at Vg=0 V) to -0.46 V and $300\;{\mu}A$, respectively. Among many design parameters influencing the performance of the device, the drive-in time of p-type gate is presented most predominant effects. Therefore we newly designed SiGe JFET, in which SiGe layers were placed above and underneath of Si-channel. The presence of SiGe layer could lessen Boron into the n-type Si channel, so that it would be able to enhance the structural consistency of p-n-p junction. The influence of SiGe layer could be explained in conjunction with boron diffusion and corresponding I-V characteristics in comparison with Si-control JFET.

• Journal of Magnetics
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• 제10권2호
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• pp.66-70
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• 2005

The junction properties between the ferromagnet (FM) and two-dimensional electron gas (2DEG) system are crucial to develop spin electronic devices. Two types of 2DEG layer, InAs and GaAs channel heterostructures, are fabricated to compare the junction properties of the two systems. InAs-based 2DEG layer with low trans-mission barrier contacts FM and shows ohmic behavior. GaAs-based 2DEG layer with $Al_2O_3$ tunneling layer is also prepared. During heat treatment at the furnace, arsenic gas was evaporated and top AlAs layer was converted to aluminum oxide layer. This new method of forming spin injection barrier on 2DEG system is very efficient to obtain tunneling behavior. In the potentiometric measurement, spin-orbit coupling of 2DEG layer is observed in the interface between FM and InAs channel 2DEG layers, which proves the efficient junction property of spin injection barrier.

• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.750-758
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• 2016

For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, $BF_2$ and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with $C^{{+}{+}}$ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.

• Nuclear Engineering and Technology
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• 제49권4호
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• pp.675-691
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• 2017

Jets in cross flow are of fundamental industrial importance and play an important role in validating turbulence models. Two jet configurations related to thermal fatigue phenomena are investigated: ${\bullet}$ T-junction of circular tubes where a heated jet discharges into a cold main flow and ${\bullet}$ Rectangular jet marked by a scalar discharging into a main flow in a rectangular channel. The T-junction configuration is a classical test case for thermal fatigue phenomena. The Vattenfall T-junction experiment was already subject of an OECD/NEA benchmark. A LES modelling and calculation strategy is developed and validated on this data. The rectangular-jet configuration is important for basic physical understanding and modelling and has been analyzed experimentally at CEA. The experimental work was focused on turbulent mixing between a slightly heated rectangular jet which is injected perpendicularly into the cold main flow of a rectangular channel. These experiments are analyzed for the first time with LES. The overall results show a good agreement between the experimental data and the CFD calculation. Mean values of velocity and temperature are well captured by both RANS calculation and LES. The range of critical frequencies and their amplitudes, however, are only captured by LES.

• Journal of Ginseng Research
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• 제30권2호
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• pp.64-69
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• 2006

Gap junctional channels, allowing rapid intercellular communication and synchronization of coupled cell activities, play crucial roles in many signaling processes, including a variety of cell activities. Consequently, a modulation of the gap junctional intercellular communication (GJIC) should be a potential pharmacological target. In the present, the GJIC of a epithelial-derived rat mammary cells (BICR-M1Rk) was assessed in the presence of ginseng saponin, by using an established method of scrape-loading dye transfer assay. The transfer of Lucifer yellow (diameter: 1.2 nm) among the neighboring BICR-M1Rk cells, in which connexin43 (Cx43) is a major gap junction channel-forming protein, was significantly retarded at a concentration of $10{\mu}g/ml$ ginseng saponin. By using both methods of RT-PCR and Western blotting, it was demonstrated that ginseng saponin modulated neither the mRNA synthesis of Cx43 nor the translational process of Cx43. This ginseng saponin-induced modification of GJIC was a similar phenomenon observed under the $\beta$-glycyrrhetinic acid treatment, a well-known gap junction channel blocker. Taken together, it is reasonable to conclude that the ginseng saponin inhibits GJIC only by modulating the gating property of gap junction channels.

• 생명과학회지
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• 제17권11호
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• pp.1517-1522
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• 2007

간극결합(intercellular channel)은 인접하는 두 세포사이에 형성된 이온채널이며 이를 통해서 각종 이온, 이차 신호전달물질, 그리고 1 kDa 미만의 대사물질들이 통과한다. 아울러, sodium 혹은 potassium 이온채널처럼 반쪽의 간극결합(connexon 혹은 hemichannel)도 세포막채널로서 작용을 한다. 현재까지 간극결합을 구성하는 connexin (Cx) 단위체는 26종류 이상이 확인되었다. 이 가운데, Cx32, Cx38, Cx46 그리고 Cx50 만이 간극결합채널뿐만 아니라 세포막채널로서도 기능을 수행한다. Xenopus oocytes에서 connexin 38 (Cx38)이 발현하는 것으로 알려져 있지만 Cx38의 생물리학적 특성이 단일채널수준에서 연구가 진행된 경우는 없다. 이번 연구에서는 Cx38 채널의 생물리학적 특성, 즉 전압-의존적 개폐와 투과성(전기전도도와 이온선택성)을 알아보고자 단일채널기록을 수행하였다. Cx38 hemichannel은 전압-의존적인 빠른 개폐와 느린 개폐의 특성을 보였다. 양성전압 환경에서는 Cx38 채널이 낮은 열릴 확률(open probability)로 빠른 개폐가 유도된 반면, 음성전압에서는 느린 개폐가 높은 열릴 확률로 유도되었다. bi-ionic 실험을 통하여, Cx38 채널은 양이온보다 음이온을 더 선택 적으로 통과시킨다는 점을 알게 되었다. Cx38의 아미노산서열을 살펴보면, 아미노말단부위에 전하를 띠는 5개의 아미노산 잔기가 존재한다. 앞으로 이들 잔기를 치환시킨 돌연변이 Cx38 채널을 이용하여 과연 이들 아미노산 부위가 전압-의존적 개폐와 투과성에 관여하는 지 여부를 조사하는 연구는 매우 흥미로운 결과를 도출할 것으로 기대한다.

• 전자공학회논문지A
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• 제32A권8호
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• pp.126-132
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• 1995

The electrical stress of short channel polycrystalline silicon (poly-Si) thin film transistor (TFT) has been investigated. The device characteristics of short channel poly-Si TFT with 5$\mu$m channel length has been observed to be significantly degraded such as a large shift in threshold voltage and asymmetric phenomena after the electrical stress. The dominant degradation mechanism in long channel poly-Si TFT's with 10$\mu$m and 20$\mu$m channel length respectively is charage trappling in gate oxide while that in short channel device with 5.mu.m channel length is defect creation in active poly-Si layer. We propose that the increased defect density within depletion region near drain junction due to high electric field which could be evidenced by kink effect, constitutes the important reason for this significant degradation in short channel poly-Si TFT. The proposed model is verified by comparing the amounts of the defect creation and the charge trapping from the strechout voltage.