• Journal of the Korean Society of Hazard Mitigation
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• v.6 no.4 s.23
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• pp.49-56
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• 2006

The rainfall runoff is drained through sewerage outlet at urban area. But, there is no guideline or standard to install sewerage outlet, so the sewerage outlet are designed or installed by discretion of engineers or constructors. In this paper, for the sake of supporting basic data to design, it would be suggested a guideline for less influenced to flow at the channel flow condition through hydraulic experiment by variation of lateral inflow discharge, sewerage outlet projecting part, sewerage outlet direction and position. Through 10 cases of experiments, it would be less influenced two sewerage outlet at up and down stream than one installed at up or down stream even though the same discharge. And installed conditions which are installed angle and protecting part will be influenced to increase water depth and to decrease velocity at upstream. So when sewerage outlet is installed, it would be try to find a installing way to be less influence with more careful.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.11
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• pp.49-54
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• 1990

In this paper, a simple model is presented for the gate-voltage dependence of the parasitic resistance in MOSFETs with the lightly-doped drain (LDD) structure. At the LDD region located under the gate electrode, an accumulation layer is formed due to the gate voltage. The parasitic resistance of the source side LDD in the channel is treated as a parallel combination of the resistance of the accumulation layer and that of the bulk LDD, which is approximated as a spreading resistance from the end of the channel inversion layer to the ${n^+}$/LDD junction boundary. Also the effects of doping gradients at the junction are discussed. As result of the model, the LDD resistance decreases with increasing the gate voltage at the linear regime, and increase quasi-linearly with the gate voltage at the saturation regime, considering th velocity saturation both in the channel and in the LDD region. The results are in good agreement with experimental data reported by others.

• Journal of the Semiconductor & Display Technology
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• v.5 no.1 s.14
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• pp.17-20
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• 2006

This paper presents of a new type of memory cell that could potentially replace both DRAM and flash memory. The proposed device cell operates by sensing the state of about 1,000 electrons trapped between unique insulating barriers in the channel region of the upper transistor. These electrons are controlled by a side gate on the transistor, and their state in turn controls the gate of the larger transistor, providing signal gain within the memory cell. It becomes faster and more reliable memory with lower operation voltage. Moreover, the use of a multiple tunnel junction (MTJ) fur the vertical transistor can significantly improve the data retention and operation speed.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.28 no.5
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• pp.587-593
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• 2004

In this paper, flow characteristics of plasma flow in a micro-tube were investigated experimentally using micro particle image velocimetry(micro-PIV). For comparison, the experiments were repeated for deionized(DI) wale. instead of plasma. Both velocity profiles of plasma and do-ionized water are well agreed with the theoretical velocity distribution of newtonian fluid. We also carried out generating plasma-in-oil droplet formation at a Y-junction microchannel. In order to clarify the hydrodynamic aspects involved in plasma droplet formation, Rhodamine-B were mixed with plasma only for visualization of plasma droplet. With oil as the continuous phase and plasma as the dispersed phase, plasma droplet can be generated in a continuous phase flow at a Y-junction. For given experimental parameters, regular-sized droplets are reproducibly formed at a uniform flow conditions.

• 전기의세계
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• v.30 no.10
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• pp.645-654
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• 1981

A technique has been proposed for fabricating a submicron channel vertical V-groove JFET using standard photolithography. A finite element numerical simulation of the V-groove JFET operation was performed using a FORTRAN progrma run on a Cyber-174 computer. The numerical simulation predicts pentode like common source output characteristics for the p$^{+}$n Vertical V-groove JFET with maximum transconductance representing approximately 6 precent of the zero bias drain conductance value and markedly high drain conductance at large drain voltages. An increase in the acceptor concentration of the V-groove JFET gate was observed to cause a significant increase in the transconductance of the device. Therefore, as above mentioned, this paper is study on the analysis of a Vertical V-groove Junction Field Effect Transistor with Finite Element Method.d.

• Biomolecules & Therapeutics
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• v.15 no.3
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• pp.156-161
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• 2007

Rapid advances in pharmacogenomic research have provided important information to improve drug selection, to maximize drug efficacy, and to minimize drug adverse reaction. The SNPs that are the most abundant type of genetic variants have been proven as valid biomarkers to give information on the prediction of pharmacokinetic/pharmacodynamic properties of drugs based on genotype. In order to elucidate a correlation between SNPs of calcium channel encoding gene and adverse reactions of calcium channel blockers, we investigated SNPs in CACNA1C gene known as a binding site of calcium channel blocker. 96 patients with hypertension who had taken or are taking an antihypertensive drug, 1,4-dihydropyridine (DHP) were included for analysis. These patients were composed of 47 patients with adverse drug reactions (ADR) such as edema from calcium channel blockers and 49 patients without ADR as a control group. The exons encoding the drug binding sites were amplified by PCR using specific primers, and SNPs were analyzed by direct sequencing. We found that there was no SNP in the exons encoding DHP binding site, but four novel SNPs in the exon-intron junction region. However, four novel SNPs were not associated with the ADR of calcium channel blockers. In conclusion, this study showed that ADR from calcium channel blockers may not be caused by SNPs of the binding sites of calcium channel blockers in CACNA1C gene.

• The Korean Journal of Physiology
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• v.24 no.1
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• pp.1-13
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• 1990

The effects of electrolytes, adenosine, ATP, 5-hydroxytryptamine (5-HT, serotonin) and ketanserin on the inhibitory junction potentials (IJPs) were investigated to clarify the interactions of these drugs with the neurotransmitters released from non-adrenergic, non-cholinergic nerves in the antrum of guinea-pig stomach. Electrical responses of antral circular muscle cells were recorded intracellularly using glass capillary microelectrode filled with 3 M KCI. All experiments were performed in Tris-buffered Tyrode soluition which was aerated with 100% $O_{2}$ and kept at $35^{\circ}C$. The results obtained were as follows: 1) Inhibitory junction potential (IJP) was recorded in antral strip, while excitatory junction potential (EJP) was recorded in fundic strip. 2) IJP recorded in antral strip was not influenced by atropine $(10^{-6}\;M)$ and guanethidine $(5{\times}10^{-6})$. 3) The amplitude of IJP increased in high $Ca^{2+}$ solution, while that of IJP decreased in high $Mg^{2+}$ solution or by $Ca^{2+}$ antagonist (verapamil). Apamin, $Ca^{2+}$-activated $K^{+}$ channel blocker blocked IJP completely. 4) ATP and adenosine decreased the amplitude of IJP. 5) 5-HT decreased the amplitude of IJP with no change of the amplitude of slow waves, while ketanserin (5-HT type 2 blocker) decreased the amplitude of slow waves markedly with no change in that of IJP. From the above results, the following conclusions could be made. 1) IJP recorded in antral strip is resulted from neurotransmitters released from non-adrenergic, non-cholinergic nerves. 2) An increase in the concentration of external $Ca^{2+}$ enhances the release of neurotransmitters from non-adrenergic, non-cholinergic nerves which activate the $Ca^{2+}$-dependent $K^{+}$ channel.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.37 no.6
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• pp.989-999
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• 2017

In this study, hydraulic experimental studies were conducted to estimate the empirical formulas of loss coefficient, which is necessary to calculate the energy loss occurred in the dividing channel junction of sewer system. The experimental apparatus was consisted of two outflow conduit with a $90^{\circ}$ angle to the inlet conduit, and the pressure and velocity heads are measured to analyze the energy losses in the branch. The measurements of the hydraulic grade line show that the hydraulic grade line was steeply descended at the dividing point due to the head loss, and the decreasing amount of velocity head increased with the increase of flowrate ratio. The head loss exponentially increased in the outlet with larger runoff as the increase of flowrate ratio and Froude number, and the head loss coefficient also increased. On the other hands, the head loss coefficients decreased in the outlet with smaller runoff as the increase of the flowrate ratio and Froude number. Using the experimental results, the empirical formulas of loss coefficient was suggested for each outlet, and the error of empirical formula was 3.91 and 5.19%, respectively. Furthermore, the total head loss coefficient calculated by the two empirical formulas was compared with the experimental results, and the error was 3.62%.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.28 no.11
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• pp.444-449
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• 2016

The main objective of this work is to experimentally investigate the effect of angle variation and intrusion depth of channels on the distribution of two-phase flow at header-channel junctions. The dimensions of the header and the channels in cross-section were fixed at $16mm{\times}16mm$ and $12mm{\times}1.8mm$, respectively. Air and water were used as the test fluids. Two different header-channel positions were tested : a vertical header with horizontal channels (case VM-HC) and a horizontal header with horizontal channels (case HM-HC). In all cases, the intrusion depths of the channels are 0 mm, 2 mm, and 4 mm. For the case of the intrusion depth of VM-HC, the flow distribution became more uniform. However, the intrusion depth negatively affected the flow distribution for the case of HM-HC because liquid separation delay occurred.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.5
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• pp.1592-1596
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• 2010

According to the increase of the channel length with fixed width/length, characteristic curves of drain current as a function of gate bias voltage of indium gallium zinc oxide (IGZO) thin-film transistors moved to a positive direction of gate voltage, and field-effect mobility decreased. In case of fixed length and width of channel, field-effect mobility was lower and subthreshold slope was larger when drain bias voltage was higher. Due to large work function of IGZO, band bending at the junction region between IGZO channel and source/drain electrodes was expected to be in opposite direction to that between silicon and metal electrodes; this could explain the above results.