• 제목/요약/키워드: ceramic oxide layer

검색결과 232건 처리시간 0.03초

세라믹 섬유를 이용한 멤브레인 필터의 연구개발 동향 (Development Trend of Membrane Filter Using Ceramic Fibers)

  • 김득주;이정우;남상용
    • 멤브레인
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    • 제26권2호
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    • pp.87-96
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    • 2016
  • 세라믹 소재는 고분자 나노섬유 분리막과 비교하여 우수한 열안정성과 고투과 물성을 가짐으로써 지난 10여 년간 많은 주목을 이끌어왔다. 최근 들어 높은 다공도와 유량을 가지는 세라믹 섬유 분리막이 금속 산화물을 이용하여 주로 전기방사법에 의해 제조되어 왔는데, 이러한 세라믹 분리막의 제조 단가를 감소하며 성능을 향상시키기 위해 나노섬유의 선택층을 가지는 세라믹 분리막들이 전기방사 공정과 개질 과정을 통해 개발되었다. 본 리뷰에서는 최근 수년간 세라믹 섬유 분리막의 개발을 위한 연구 동향에 대하여 정리하였다.

알루미늄 판상에 글라스 세라믹 후막이 코팅된 절연금속기판의 제조 및 절연특성 (Fabrication and Electrical Insulation Property of Thick Film Glass Ceramic Layers on Aluminum Plate for Insulated Metal Substrate)

  • 이성환;김효태
    • 마이크로전자및패키징학회지
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    • 제24권4호
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    • pp.39-46
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    • 2017
  • 본 연구는 평판형 히터용 금속방열판상의 세라믹 절연층 제조, 즉 절연성 금속기판에 관한 것이다. 반도체나 디스플레이의 열처리 공정 등에 사용되는 평판형 히터를 제조함에 있어서, 온도 균일도를 높이기 위해 금속 방열판으로서 열전도율이 높고, 비교적 가벼우며, 가공성 좋은 알루미늄 합금 기판이 선호된다. 이 알루미늄 기판에 발열 회로 패턴을 형성하기 위해서는 금속 기판에 절연층으로서 고온 안정성이 우수한 세라믹 유전체막을 코팅하여야 한다. 금속 기판상에 세라믹 절연층을 형성함에 있어서 가장 빈번히 발생하는 첫 번째 문제는 금속과 세라믹의 이종재료 간의 큰 열팽창계수 차이와 약한 결합력에 의한 층간박리 및 균열발생이다. 두 번째 문제는 절연층의 소재 및 구조적 결함에 따른 절연파괴이다. 본 연구에서는 이러한 문제점 해소를 위해 금속소재 기판과 세라믹 절연층 사이에 완충층을 도입하여 이들 간의 기계적 매칭과 접합력 개선을 도모하였고, 다중코팅 방법을 적용하여 절연막의 품질과 내전압 특성을 개선하고자 하였다.

상온 진공 분말 분사 공정을 이용한 다층 박막 소재의 제조 및 전기적 특성 (Fabrication and Characterization of Multi-layered Thick Films by Room Temperature Powder Spray in Vacuum Process)

  • 류정호;안철우;김종우;최종진;윤운하;한병동;최준환;박동수
    • 한국전기전자재료학회논문지
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    • 제25권8호
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    • pp.584-592
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    • 2012
  • Room temperature powder spray in vacuum process, so called Aerosol deposition (AD) is a room temperature (RT) process to fabricate thick and dense ceramic films, based on collision of solid ceramic particles. This technique can provide crack-free dense thin and thick films with thicknesses ranging from sub micrometer to several hundred micrometers with very fast deposition rates at RT. In addition, this technique is using solid particles to form the ceramic films at RT, thus there is few limitation of the substrate and easy to control the compositions of the films. In this article, we review the progress made in synthesis of piezoelectric thin/thick films, multi-layer structures, NTC thermistor thin/thick films, oxide electrode thin films for actuators or sensor applications by AD at Korea Institute of Materials Science (KIMS) during the last 4 years.

Thin Film (La0.7Sr0.3)0.95MnO3-δ Fabricated by Pulsed Laser Deposition and Its Application as a Solid Oxide Fuel Cell Cathode for Low-Temperature Operation

  • Noh, Ho-Sung;Son, Ji-Won;Lee, Heon;Kim, Hae-Ryoung;Lee, Jong-Ho;Lee, Hae-Weon
    • 한국세라믹학회지
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    • 제47권1호
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    • pp.75-81
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    • 2010
  • The feasibility of using the thin film technology in utilizing lanthanum strontium manganite (LSM) for a solid oxide fuel cell (SOFC) cathode in a low-temperature regime is investigated in this study. Thin film LSM cathodes were fabricated using pulsed laser deposition (PLD) on anode-supported SOFCs with yttria-stabilized zirconia (YSZ) electrolytes. Although cells with a 1 ${\mu}m$-thick LSM cathode showed poor low-temperature cell performance compared to that of a cell with a bulk-processed cathode due to the lack of a triple-phase boundary length, the cell with 200 nm-thick gadolinia-doped ceria (GDC) inserted between the LSM and YSZ showed enhanced performance and more stable operation characteristics in a comparison of a cell without a GDC layer. We postulate that the GDC layer likely improved the cathode adhesion, therefore contributing to the improvement of the cell performance instead of serving as an interfacial reaction buffer.

PLD 공정으로 제조된 LSM-YSZ 나노복합체층이 포함된 경사구조 박막 공기극을 적용한 SOFC의 성능 분석 (Performance of Solid Oxide Fuel Cell with Gradient-structured Thin-film Cathode Composed of Pulsed-laser-deposited Lanthanum Strontium Manganite-Yttria-stabilized Zirconia Composite)

  • 명두환;홍종일;황재연;이종호;이해원;김병국;조성걸;손지원
    • 한국세라믹학회지
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    • 제48권6호
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    • pp.487-492
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    • 2011
  • The effect of the application of lanthanum strontrium manganite and yttria-stabilized zirconia (LSM-YSZ) nano-composite fabricated by pulsed laser deposition (PLD) as a cathode of solid oxide fuel cell (SOFC) is studied. A gradient-structure thin-film cathode composed of 1 micron-thick LSM-YSZ deposited at an ambient pressure ($P_{amb}$) of 200 mTorr; 2 micron-thick LSM-YSZ deposited at a $P_{amb}$ of 300 mTorr; and 2 micron-thick lanthanum strontium cobaltite (LSC) current collecting layer was fabricated on an anode-supported SOFC with an ~8 micron-thick YSZ electrolyte. In comparison with a 1 micron-thick nano-structure single-phase LSM cathode fabricated by PLD, it was obviously effective to increase triple phase boundaries (TPB) over the whole thickness of the cathode layer by employing the composite and increasing the physical thickness of the cathode. Both polarization and ohmic resistances of the cell were significantly reduced and the power output of the cell was improved by a factor of 1.6.

Metal PCB에 있어서 양극산화법으로 제작한 Al2O3절연막의 방열특성 (Heat dissipation of Al2O3 Insulation layer Prepared by Anodizing Process for Metal PCB)

  • 조재승;김정호;고상원;임실묵
    • 한국표면공학회지
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    • 제48권2호
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    • pp.33-37
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    • 2015
  • High efficiency LED device is being concerned due to its high heat loss, and such heat loss will cause a shorter lifespan and lower efficiency. Since there is a demand for the materials that can release heat quickly into the external air, the organic insulating layer was required to be replaced with high thermal conductive materials such as metal or ceramics. Through anodizing the upper layer of Al, the Breakdown Voltage of 3kV was obtained by using an uniform thickness of $60{\mu}M$ aluminum oxide($Al_2O_3$) and was carried out to determine the optimum process conditions when thermal cracking does not occur. Two Ni layers were formed above the layer of $Al_2O_3$ by sputtering deposition and electroplating process, and saccharin was added for the purpose of minimizing the remain stress in electroplating process. The results presented that the 3-layer film including the Ni layer has an adhesive force of 10N and the thermal conductivity for heat dissipation is achieved by 150W/mK level, and leads to improvement about 7 times or above in thermal conductivity, as opposed to the organic insulation layer.

NaCl과 Na₂SO₄에 의한 SiC 고온 부식에 미치는 Alumina 첨가량의 영향 (Effect of Alumina Content on the Hot Corrosion of SiC by NaCl and Na2SO4)

  • 이수영
    • 한국세라믹학회지
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    • 제28권8호
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    • pp.625-625
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    • 1991
  • 2wt% Al2O3와 10wt% Al2O3를 첨가하여 2000℃와 2050℃에서 가압소결된 SiC를 37 mol% NaCl과 63 mol% Na2SO4 Salt에 의해 60분까지 hot corrosion을 시켰다. 부식은 SiC표면에 형성된 SiO2층이 Na2O 이온에 의한 basic dissolution에 이해 일어남이 관찰되었고 10wt%의 Al2O3가 함유된 시편은 입계에 Al2O3를 함유한 입계상의 존재로 2wt% Al2O3가 함유된 시편보다 낮은 corrosion rate를 나타냈다. SiC와 산화물층 사이에서 gas bubble의 형성이 관찰되었고 이 gas bubble이 산화물층을 심하게 파괴하기 전까지 corrosion rate은 linear하게 변했다. 부식 양상은 개기공과 입계에서 pitting corrosion에 의해 시작되었다.

$RuO_2$를 마스크 층으로 TMAH에 의한 이방성 실리콘 식각 (Anisotropic Silicon Etching Using $RuO_2$ Thin Film as a Mask Layer by TMAH Solution)

  • 이재복;오세훈;홍경일;최덕균
    • 한국세라믹학회지
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    • 제34권10호
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    • pp.1021-1026
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    • 1997
  • RuO2 thin film has reasonably good conductivity and stiffness and it is thought to substitute for the cantilever beam made up of Pt and Si3N4 double layers in microactuators. Therefore, anisotopic Si etching was performed using RuO2 thin film as a mask layer in 25 wt. % TMAH water solution. In the etching temperature ranging from 6$0^{\circ}C$ to 75$^{\circ}C$, the etch rates of all the crystallographic directions increased linearly as the etching temperature increased. The etch rate ratio(selectivity) of [111]/[100] which varied from 0.08 to 0.14, was not sensitive to temperature. The activation energies for [110] direction, [100] direction and [111] direction were 0.50, 0.66 and 1.04eV, respectively. RuO2 cantilever beam with a clean surface was formed at the etching temperatures of 6$0^{\circ}C$ and $65^{\circ}C$. But the damages due to formation of pin holes on RuO2 surface were observed beyond 7$0^{\circ}C$. The tensile stress of RuO2 thin films caused the cantilever bending upward. As a result, it was demonstrated that the formation of conducting oxide RuO2 cantilever beam which can replace the role of an electrode and supporting layer could be possible by TMAH solution.

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에어로졸 증착법(Aerosol Depostion method)에 의한 $Ba(Zr_{0.85}Y_{0.15})O_{3-\delta}$-NI 수소분리막 제조 ($Ba(Zr_{0.85}Y_{0.15})O_{3-\delta}$-NI Composite Membrane for Hydrogen Separation by Aerosol Deposition Method)

  • 박영수;최진섭;변명섭;김진호;황광택
    • 한국수소및신에너지학회논문집
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    • 제21권4호
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    • pp.271-277
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    • 2010
  • $(Ba(Zr_{0.85}Y_{0.15})O_{3-\delta})$ oxide, showing high protonic conductivity at high temperatures and good chemical stability with $CO_2$ are referred to as hydrogen separation membrane. For high efficiency of hydrogen separation ($H_2$ flux and selectivity) and low fabrication cost, ultimate thin and dense BZY-Ni layer has to be coated on a porous substrate such as $ZrO_2$. Aerosol depostion (AD) process is a novel technique to grow ceramic film with high density and nano-crystal structure at room-temperature, and may be applicable to the fabrication process of AD integration ceramic layer effectively. XRD, SEM, X-ray mapping measurements were conducted in order to analyze the characteristics of BZY-Ni membrane fabricated by AD process. it is observed that it is homogeneous distribution for BZY-Ni. The result of $H_2$ permeation rate suggests that BZY-Ni composite is higher than BZY.

Properties of Working Electrodes with IGZO layers in a Dye Sensitized Solar Cell

  • Kim, Gunju;Noh, Yunyoung;Choi, Minkyoung;Kim, Kwangbae;Song, Ohsung
    • 한국세라믹학회지
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    • 제53권1호
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    • pp.110-115
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    • 2016
  • We prepared a working electrode (WE) coated with 0 ~ 50 nm-thick indium gallium zinc oxide(IGZO) by using RF sputtering to improve the energy conversion efficiency (ECE) of a dye sensitized solar cell (DSSC). Transmission electron microscope (TEM) and energy dispersive spectroscopy (EDS) were used to analyze the microstructure and composition of the IGZO layer. UV-VIS-NIR spectroscopy was used to determine the transparency of the WE with IGZO layers. A solar simulator and a potentiostat were used to confirm the photovoltaic properties of the DSSC with IGZO layer. From the results of the microstructural analysis, we were able to confirm the successful deposition of an amorphous IGZO layer with the expected thickness and composition. From the UV-VIS-NIR analysis, we were able to verify that the transparency decreased when the thickness of IGZO increased, while the transparency was over 90% for all thicknesses. The photovoltaic results show that the ECE became 4.30% with the IGZO layer compared to 3.93% without the IGZO layer. As the results show that electron mobility increased when an IGZO layer was coated on the $TiO_2$ layer, it is confirmed that the ECE of a DSSC can be enhanced by employing an appropriate thickness of IGZO on the $TiO_2$ layer.