• Journal of the Korean Ceramic Society
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• v.47 no.6
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• pp.633-637
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• 2010

In this study, lithium manganese oxide spinel ($LiMn_{1.9}Fe_{0.1}Nb_{0.0005}O_4$) as a cathode material of lithium ion secondary batteries is synthesized with spray drying, and in order to increase its crystallinity and electrochemical properties, the granulated $LiMn_{1.9}Fe_{0.1}Nb_{0.0005}O_4$ particle surface is coated with lithium titanium oxide spinel ($Li_4Ti_5O_{12}$) through a sol-gel method. The granulated particles present a higher tap density and lower specific surface area. The crystallinity and discharge capacity of the $Li_4Ti_5O_{12}$ coated material is relatively higher than uncoated material. With the coating layer, the discharge capacity and cycling stability are increased and the capacity fading is suppressed successfully.

• Transactions of the Korean Society of Mechanical Engineers
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• v.19 no.4
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• pp.1033-1040
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• 1995

To simulate strength reliability and durability of ceramic parts under gas turbine application environments, particle impact damage behaviors in silicon carbide oxidized at 1673 K and 1523 K for 200 hours in atmosphere were investigated. The long-term oxidation produced a slight increase in the static fracture strength. Particle impact caused a spalling of oxide layer. The patterns of spalling and damage induced were dependent upon the property and impact velocity of the particle. Especially, the difference in spalling behaviors induced could be explained by introducing the formation mechanism of lateral crack and elastic-plastic deformation behavior at impact sit. At the low impact velocity regions, the oxidized SiC showed a little increase in the residual strength due to the cushion effect of oxide layer, as compared with the as-received SiC without oxide layer.

• Ceramist
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• v.23 no.2
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• pp.132-144
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• 2020

Solid oxide fuel cell (SOFC) have attracted much attention due to clean, efficient and environmental-friendly generation of electricity for next-generation energy conversion devices. Recently, many studies have been reported on improving the performance of SOFC electrodes and electrolytes by applying atomic layer deposition (ALD) process, which has advantages of excellent film quality and conformality, and precise control of film thickness by utilizing its unique self-limiting surface reaction. ALD process with these advantages has been shown to provide functional ceramic interfaces for SOFC electrodes and electrolytes. In this article, recent examples of successful functionalization and stabilization on SOFC electrodes and electrolytes by the application of ALD process for realizing high performance SOFC cells are reported.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.336-340
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• 2012

Wide band gap p-type hydrogenated amorphous silicon oxide (a-SiO:H) buffer layer has been used at the interface of transparent conductive oxide (TCO) and hydrogenated amorphous silicon (a-Si:H) p-type layer of a p-i-n type a-Si:H solar cell. Introduction of 5 nm thick buffer layer improves in blue response of the cell along with 0.5% enhancement of photovoltaic conversion efficiency (η). The cells with buffer layer show higher open circuit voltage (Voc), fill factor (FF), short circuit current density (Jsc) and improved blue response with respect to the cell without buffer layer.

• Journal of the Korean Ceramic Society
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• v.37 no.3
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• pp.263-270
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• 2000

The Pt/copper oxide/n-Si electrodes were fabricated by depositing copper oxide thin film of 500${\AA}$ and very thin Pt layer on the n-type (100) Si substrate. hotoelectrochemical properties and stability profiles of the electrodes were investigated as a function of deposition time of Pt layer. As the deposition time of Pt layer increased up to 10 seconds, the photocurrent and quantum efficiency were increased and then decreased with further depositing time. The better cell stability was observed for the electrode with longer deposition time. The improvements in above photoelectrochemical properties indicate that Pt layer acts as a catalyst layer at electrode/electrolyte interface as well as a protective layer. The decreasing tendency of the photocurrent and efficiency for the electrode with Pt layer deposited above 20 seconds was explained as an increases in probbility of electron-hole pair recombination and also the absorbing photon loss at electrode surface due to the excessive thickness of Pt layer. The results were confirmed by impedance spectroscopy, mutiple cycle voltammograms and microstructural analyses.

• Journal of the Korean Ceramic Society
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• v.51 no.4
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• pp.231-242
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• 2014

An interconnect in solid oxide fuel cells (SOFCs) electrically connects unit cells and separates fuel from oxidant in the adjoining cells. The interconnects can be divided broadly into two categories - ceramic and metallic interconnects. A thin and gastight ceramic layer is deposited onto a porous support, and metallic interconnects are coated with conductive ceramics to improve their surface stability. This paper provides a short review on ceramic materials for SOFC interconnects. After a brief discussion of the key requirements for interconnects, the article describes basic aspects of chromites and titanates with a perovskite structure for ceramic interconnects, followed by the introduction of dual-layer interconnects. Then, the paper presents protective coatings based on spinel-or perovskite-type oxides on metallic interconnects, which are capable of mitigating oxide scale growth and inhibiting Cr evaporation.

• Journal of the Korean Ceramic Society
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• v.52 no.4
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• pp.290-293
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• 2015

The properties of the IZTO thin films on the glass were studied with a variation of the $SiO_2$ buffer layer thickness. $SiO_2$ buffer layers were deposited by plasma-enhanced chemical vapor deposition (PECVD) on the glass, and the In-Zn-Tin-Oxide (IZTO) thin films were deposited on the buffer layer by RF magnetron sputtering. All the IZTO thin films with the $SiO_2$ buffer layer are shown to be amorphous. Optimum $SiO_2$ buffer layer thickness was obtained through analyzing the structural, morphological, electrical, and optical properties of the IZTO thin films. As a result, the IZTO surface roughness is 0.273 nm with a sheet resistance of $25.32{\Omega}/sq$ and the average transmittance is 82.51% in the visible region, at a $SiO_2$ buffer layer thickness of 40 nm. The result indicates that the uniformity of surface and the properties of the IZTO thin film on the glass were improved by employing the $SiO_2$ buffer layer and the IZTO thin film can be applied well to the transparent conductive oxide for display devices.

• Journal of the Korean Ceramic Society
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• v.40 no.2
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• pp.113-117
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• 2003

To reduce the doming of the shadow mask due to thermal expansion and to prevent the color discrepancy, the electron reflecting layer with lead tungsten oxides on the electron gun side of shadow mask was formed by screen printing method and doming property was evaluated in CRT. First, the lead tungsten oxides were prepared by calcining the mixture of lead oxide and tungsten oxide above 600$^{\circ}C$. Second, the paste which has the anti-doming composition including the lead tungsten oxides was coated by screen-printing method. As a result, the doming of the shadow mask was reduced about from 30 to 45%.

• Journal of the Korean Ceramic Society
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• v.47 no.4
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• pp.353-356
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• 2010

Zinc oxide (ZnO) thin films were deposited using atomic layer deposition. The electrical and optical properties were characterized using Hall measurements, spectroscopic ellipsometry and UV-visible spectrophotometry. The electronic concentration and the mobility were found to be critically dependent on the deposition temperature, exhibiting increased resistivity and reduced electronic mobility at low temperature. The corresponding optical properties were measured as a function of photon energy ranging from 1.5 to 5.0 eV. The simulated extinction coefficients allowed the determination of optical band gaps, i.e., ranging from 3.36 to 3.41 eV. The electronic carrier concentration appears to be related to the reduction in the corresponding band gap in ZnO thin films.

• The Journal of Korean Academy of Prosthodontics
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• v.27 no.1
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• pp.143-179
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• 1989

To observe the bonding behavior of palladium-based alloys to porcelain; 1. Pd-Co binary alloy with the higher cobalt content, 2. Pd-Co binary alloy with the lower cobalt content, 3. Pd-Ag-Sn ternary alloy, 4. Pd-Ag binary alloy, 5. Pd-Cu-Au ternary alloy and 6. Pd-Cu binary alloy were made as 6 groups of experimental alloys. Each group of alloy was divided into 4 sub-groups such as one sub-group that was not degassed and three sub-groups that degassed for 5 minutes, 10 minutes and 15 minutes. On each specimen, weight changes after degassing, morphological changes of oxide layer by changing the degassing time, compositional changes at metal-ceramic interface and bond strength of metal-ceramic measured with planar shear test were observed and compared. The results of the present study allow the following conclusions to be drawn: 1. The alloy showing the greatest bond strength was Pd-Cu alloy without gold and bond strength was decreased by alloying gold to them. 2. Although Pd-Co alloy showed the most prominent oxidation behavior, bond strength of them to porcelain was not greatly high by the formation of porosities at metal-ceramic interfaces. 3. Likewise tin, cobalt formed the peaks on line profiles at metal-ceramic interface, however copper did not exhibit such peaks on line profiles. 4. Mainly, oxide layer on Pd-Co alloy was composed with cobalt, and for Pd-Co alloy with higher cobalt content the rise of bond strength was not significant by increased degassing time. 5. On Pd-Ag alloy not containing tin, during degassing for 15 minutes silver content was increased at metal-ceramic interface. 6. As an oxidized element, tin formed the oxide layers that widen their area by increasing the degassing time, while cobalt and copper showed the morphological changes of particle or crystal on oxide layer.