• 한국세라믹학회지
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• 제42권12호
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• pp.865-871
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• 2005

Submicron thick solid electrolyte membrane is essential to the implementation of low temperature solid oxide fuel cell, and, therefore, development of new electrode structures is necessary for the submicron thick solid electrolyte deposition while providing functions as current collector and fuel transport channel. In this research, a nickel membrane with multi-stage nano hole array has been produced via modified two step replication process. The obtained membrane has practical size of 12mm diameter and $50{\mu}m$ thickness. The multi-stage nature provides 20nm pores on one side and 200nm on the other side. The 20nm side provides catalyst layer and $30\~40\%$ planar porosity was measured. The successful deposition of submicron thick yttria stabilized zirconia membrane on the substrate shows the possibility of achieving a low temperature solid oxide fuel cell.

• 한국세라믹학회지
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• 제35권6호
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• pp.529-534
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• 1998

Agglomeration-free indium oxide particles were produced by ultrasonic pyrolysis of indium nitrate(3 hy-drate) solution. Th mean size of particles was increased from 3 $\mu\textrm{m}$ to 11$\mu\textrm{m}$ with increasing intial con-centrations of indium nitrate from 0.05mol% to 4.83 mol% When the input rate of indium nitrate solution was increased from 0.1 cm3/min to 0.8cm3/min the size of particles remained same and only the pro-duction rate of particles was increased. At 300$^{\circ}C$ the particles were white color with low crystallinity. But the color turned into yellow with increasing reaction temperature. The change of particle size was not ob-served with increasing temperatuer up to 700$^{\circ}C$ IR spectrum and TGA analysis confirmed that the purity of indium oxide was increased with temperature of reaction.

• 한국세라믹학회지
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• 제55권1호
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• pp.1-20
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• 2018

Semiconducting nanomaterials have attracted considerable interest in recent years due to their high sensitivity, selectivity, and fast response time. In addition, for portable applications, they have low power consumption, lightweight, simple in operation, a low maintenance cost. Furthermore, it is easy to manufacture microelectronic sensor structures with metallic oxide sensitive thin layers. The use of semiconducting metal oxides to develop highly sensitive chemiresistive sensing systems remains an important scientific challenge in the field of gas sensing. According to the sensing mechanisms of gas sensors, the overall sensor conductance is determined by surface reactions and the charge transfer processes between the adsorbed species and the sensing material. The primary goal of the present study is to explore the possibility of using semiconducting mixed metal oxide nanostructure as a potential sensor material for selective gases.

• 한국세라믹학회지
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• 제56권1호
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• pp.84-90
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• 2019

The varistor properties and stability against dc-accelerated stress of $V_2O_5-Mn_3O_4-Co_3O_4-Dy_2O_3-Nb_2O_5-Bi_2O_3$ (VMCDNB)-doped zinc oxide ceramics sintered at $850-925^{\circ}C$ were investigated. Increasing the sintering temperature increased the average grain size from 4.6 to 8.7 mm and decreased the density of the sintered pellet density from 5.54 to $5.42g/cm^3$. The breakdown field decreased from 5919 to 1465 V/cm because of the increase in the average grain size. Zinc oxide ceramics sintered at $875^{\circ}C$ showed the highest nonlinear coefficient (43.6) and the highest potential barrier height (0.96 eV). Zinc oxide ceramics sintered at $850^{\circ}C$ showed the highest stability: the variation rate of the breakdown field was -2.0% and the variation rate of the nonlinear coefficient was -23.3%, after application of the specified stress (applied voltage/temperature/time).

• 한국세라믹학회지
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• 제12권2호
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• pp.10-14
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• 1975

Bodies whose compositions are in the ternary system BaCO3-TiO2-SnO2 containing from 5 to 90 mol % stannic oxide were prepared to improve the thermal characteristics of barium titanate dielectrics. Bodies having dielectric constant (K) of 2100 at 1 KHz, low negative temperature coefficients of 1500ppm up to about 9$0^{\circ}C$, Curie Temperature of 2$0^{\circ}C$, and dissipation factor of 0.2-0.4% were obtained with addition of 15 mole % stannic oxide.

• 한국세라믹학회지
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• 제34권12호
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• pp.1247-1253
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• 1997

Sinter-active yttria powders were prepared by a solution precipitation with using a self-decomposing precipitation agent NH2CONH2(urea). The cold-pressed powders can be sintered to full density and the microstructure of grains less than 200 nm at a temperature as low as 120$0^{\circ}C$. The activity of the yttria powder has been controlled by varying nucleation conditions during precipitation and by minimizing formation of aggregates. The type of precursor is decisive in preparation of a sinter-active oxide powder, and urea is desirable as a precipitation agent for an active yttrium oxide powder.

• 한국세라믹학회지
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• 제13권3호
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• pp.28-36
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• 1976

Zn 산화물을 산과 공기 그리고 헬륨 각각의 분위기에서 열처리 한 후 그 각각에 대한 열광성을 $83^{\circ}~300^{\circ}K$의 온도 범위에서 연구하였다. Zn 산화물의 열광성은 90$0^{\circ}C$ 이상의 온도에서는 산소의 부분압에 의존하며 그 최대강도는 1/T에 비례하였다. 이 성질을 유발한다고 믿어지고 있는 비화학양론적인 결함으 주 요인은 2개의 전자를 trap 하는 산호 이온의 vacancy라고 믿어지고 있다. Trap된 전자의 활성화에너지는 0.13ev였다.

• 한국세라믹학회지
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• 제35권4호
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• pp.392-398
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• 1998

• 동굴
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• 제75호
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• pp.49-54
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• 2006

Electrophoretic Deposition (EPD) is the most convenient technology to deposit natural or oxide powders of nonconductive materials in alcoholic suspension solution with adding electrolyte of iodine to form ceramic thick film on metal substrate under applied electric field with double electric layer between electrode and metal substrate. In this research work, the important parameters and technical ways were studied to form EPD thick films of typical oxide ceramics of Al2O3, YBCO and tourmaline powders.

• 한국세라믹학회지
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• 제15권3호
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• pp.135-139
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• 1978

Sintering oxide which was prepared by sintering at $1200^{\circ}C$ the mixture of ${\gamma}$-$Fe_2O_3$ and $Sb_2O_3$ in 2 : 1 mol ratio, showed 1st electrical switching and stable 2nd switching when D.C. voltage was applied. This electrical switching mechanism was known to be thermal mechanism from dependence of environmental temperature of threshold Voltage(Vm), Current(Im) and the conductivity of the current filament of the sintering oxide.