• Journal of the Korean Ceramic Society
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• v.43 no.8 s.291
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• pp.479-485
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• 2006

The residual stress changes on thermo-mechanical loading in the interface region of the Thermal Barrier Coating (TBC)/Thermally Grown Oxide (TGO)/Bond Coat (BC) were calculated on the TBC-coated superalloys using a Finite Element Method (FEM). It was found that the residual stress of the interface boundary was dependent upon mainly the oxide formation and the swelling rate of the oxide by creep relaxation. During an oxide swelling, the relaxation of residual stress which is due to creep deformation increased the TBC's life. In the case of the fine grain size of TGO scale, the TBC stresses piled up by oxide swelling could be relaxed by diffusional creep effect of TGO.

• Journal of the Korean Ceramic Society
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• v.35 no.6
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• pp.535-542
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• 1998

SOI(silicon oninsulator) was fabricated through the direct bonding of a hydrophilized single crystal Si wafer and a thermally oxidized SiO2 thin film to investigate the stacking faults in silicon at the Si/SiO2 in-terface. At first the oxidation kinetics of SiO2 thin film and the stacking fault distribution at the oxidation interface were investigated. The stacking faults could be divided into two groups by their size and the small-er ones were incorporated into the larger ones as the oxidation time and temperature increased. The den-sity of the smaller ones based critically lower eventually. The SOI wafers directly bonded at the room temperature were annealed at 120$0^{\circ}C$ for 1 hour. The stacking faults at the bonding and oxidation interface were examined and there were anomalies in the distributions of the stacking faults of the bonded region to arrange in ordered ring-like fashion.

• Journal of the Korean Ceramic Society
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• v.30 no.11
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• pp.933-940
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• 1993

SO42-/Al2O3 powder was prepared by the coprecipitation method from the Al(NO3)3.9H2O and NH4OH and followed by being treated with various concentrations of sulfuric acid. The characterization of these powders was performed with XRD, BET and FT-IR. The surface charge density at alumina/KCl(aq) interface was measured by potentiometric titration method. From the experimental data it was shown that acid strength, specfic surface area, and structure of surface treated alumina were independent on the amount of exchanged SO42-. However, the acid amounts of alumina were increased with the amounts of SO42- formed on alumina surface. The relation between the acid amount of SO42- ion exchanged alumina surface and the surface charge density for SO42-/Al2O3/KCl(aq) interface was investigated.

• Journal of the Korean Ceramic Society
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• v.30 no.11
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• pp.949-954
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• 1993

Microstructural development at the ZrO2/NiTi bonding interface and reaction products were examined and identified with SEM and AEM. Ti-oxide, Ti2Ni and Ni2Ti layer were observed whose thickness depends on bonding temperature typically. The development of Ti-oxide layer is related with oxygen ion in ZrO2 and liquid phase Ti2Ni. It is considered that compositional deviation from homogeneity and residual stress caused by thermal expansion mismatch are closely related with the formation of the Ti2Ni phase.

• Journal of the Korean Ceramic Society
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• v.36 no.8
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• pp.863-870
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• 1999

SOI(silicon on insulafor) was fabricated through the direct bonding using (100) Si wafer and 4$^{\circ}$off (100) Si wafer to investigate the stacking faults in silicon at the Si/SiO2 oxidized and bonded interface. The treatment time of wafer surface using MSC-1 solution was varied in order to observe the effect of cleaning on bonding characteristics. As the MSC-1 treating time increased surface hydrophilicity was saturated and surface microroughness increased. A comparison of surface hydrophilicity and microroughness with MSC-1 treating time indicates that optimum surface modified condition for time was immersed in MSC-1 for 2 min. The SOI structure directly bonded using (100) Si wafer and 4$^{\circ}$off (100) Si wafer at the room temperature were annealed at 110$0^{\circ}C$ for 30 min. Then the stacking faults at the bonding and oxidation interface were examined after the debonding. The results show that there were anomalies in the gettering of the stacking faults at the bonded region.

• Journal of the Korean Ceramic Society
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• v.26 no.3
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• pp.390-394
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• 1989

The stored elastic strain energy due to the thermal expansion mismatch between the thermally oxidized crystalline layer (cristobalite) and CVD Si3N4($\alpha$-Si3N4) on cooling form high oxidation temperature (1000-140$0^{\circ}C$) to room temperature, releases through the crazing of film and lifting at the SiO2/Si3N4 interface. The ratial equation (1/n) which corresponds to the ratio of the relaxation of the stored elastic stain energy due to crazing of film to the total energy, is derived under the assumption of the square crazed pattern, as follow. 1/n={8${\gamma}$(1-v)2}/(ΔL2dE) The ratial equation suggests the reason for the lifting at the SiO2/Si3N4 interface which was observed in this research.

• Journal of the Korean Society of Safety
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• v.18 no.4
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• pp.39-43
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• 2003

An experimental study was conducted to develop and understanding of fracture behavior of ceramic thermal barrier coating when subjected to a thermal shock loading. The thermal loading was applied using a 1.5kW $CO_2$ laser. In the experiments, beam-shaped specimens were subjected to a high heat flux for 4sec and cooling of 7sec in air. The interface crack length was increased as the crack density, the surface pre-crack legth and the coating thickness were increased. The center surface crack length was increased as the maximum surface temperature got higher and the surface pre-crack length for shorter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.9-12
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• 1994

Epoxy-Ceramic Composite have good insulating, therma1 and mechanical properties, so it is studied actively on this material. In this thesis, we made a composite material b)\ulcorner filling Epoxy Resin with ceramics treated with Sillane Coupling Agent and studied dielectric and insulating characteristics according to treatment density of Sillane Coupling Agent and weight percent of filler. As a result, loss tangent increase and electrical breakdown voltage decrease according to increasing treatment density of sillane coupling agent because Interface matching between matrix and filler is not good. The best treatment density of sillane coupling agent is 0.5% water solution, in this density the best interface matching is achieved so good dielectric and insulation characteristics are shown. Dielectric and insulation characteristics according to weight percent of filler are best at 25wt.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.336-340
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• 2012

Wide band gap p-type hydrogenated amorphous silicon oxide (a-SiO:H) buffer layer has been used at the interface of transparent conductive oxide (TCO) and hydrogenated amorphous silicon (a-Si:H) p-type layer of a p-i-n type a-Si:H solar cell. Introduction of 5 nm thick buffer layer improves in blue response of the cell along with 0.5% enhancement of photovoltaic conversion efficiency (η). The cells with buffer layer show higher open circuit voltage (Voc), fill factor (FF), short circuit current density (Jsc) and improved blue response with respect to the cell without buffer layer.

• Korean Journal of Materials Research
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• v.19 no.12
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• pp.699-702
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• 2009

Due to the importance of the SiGe/Si heterostructure in the fields of thermoelectric and electronic applications, SiGe/Si heterostructures have been extensively investigated. For practical applications, thermal stability of the heterostructure during the thermoelectric power generation or fabrication process of electronic devices is of great concern. In this work, we focused on the effect of thermal annealing on the defect configuration in the SiGe/Si heterostructure. The formation mechanism of planar defects in an annealed SiGe/Si heterostructure was investigated by transmission electron microscopy. Due to the interdiffusion of Si and Ge, interface migration phenomena were observed in annealed heterostructures. Because of the strain gradient in the migrated region between the original interface and the migrated interface, the glide of misfit dislocation was observed in the region and planar defects were produced by the interaction of the gliding misfit dislocations. The planar defects were confined to the migrated region, and dislocation pileup by strain gradient was the origin of the confinement of the planar defect.