• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.935-937
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• 2006

Phosphate glass system is expected to be useful as a lead-free material in many devices in plasma display panels (PDP). The present study is mainly focused on the evaluation of interface reaction between ceramic fillers and phosphate glass matrix for barrier ribs in PDP. The results suggest that properties of barrier rib depend on the crystallization behavior and interface reaction between the fillers and glass matrix.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.10
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• pp.101-105
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• 1990

The use of a sol-gel processed cordierite precursor sinterable about$900^{\circ}C$ allows cosintering of the copper and the ceramic. A strong bonding between the copper film and the cordierite substrate can be achieved through an eutectic bonding technique. These interfaces were investigated using STEM. copper diffusion as well as strong chemical and structural modifications was observed in the interface region. Although these interfaces have good adhesion properties, there was no evidence of the formation of the copper compound at the interface.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 1998.03a
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• pp.233-238
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• 1998

Recently, the uses of ceramic/metal bonded joints for structural materials have increased in various engineering fields such as automobiles, heat engines, and so on. A method of strength evaluation focussing on fracture criterion of mixed was investigated in Si3N4/metal bonded joint. Also, Fracture toughness tests of Si3N4/metal bonded joints with an interface crack were carried out and the stress intensity factors of these joints were analyzed by boundary element method. From the results, the fracture criterion and method of strength evaluation by the fracture toughness were proposed in Si3N4/metal bonded joints

• Journal of Adhesion and Interface
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• v.3 no.1
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• pp.30-36
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• 2002

In this paper, some idea about the use of Metal and ceramic filled epoxy adhesive, Anaerobic adhesive and RTV silicone in the assembly, maintain and repair of machinery and equipment is given. Many examples which have been successfully used in Chinese industry are introduced: ${\bullet}$ Wear, Abrasion, Corrosion/Erosion Resistance and Metal Rebuilding Worn shafts, Scored Hydraulic Ram, Bearing Housings, Slurry Pumps (Bodies & Impellers), Slide-ways, Heat Exchangers, Cracked Castings and Molds. Leaking Pipes and Tanks. ${\bullet}$ Locking and Retaining Thread, Bearing, Keyways, Bolts, Nuts, Studs, Gears, Collars, Motors. ${\bullet}$ Scaling and Gasketing Flanges, Pipe Joints, Machined surfaces.

• Journal of the Korean institute of surface engineering
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• v.22 no.4
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• pp.185-196
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• 1989

The surface modification of a mild and stainless steel by alumina sprayed coating were studied. The effects of surface roughness and bond coating layer on the adhesive strengthy and durability of sprayed specimens were also investiated. The adhesive strength of ceramic coating was affected by surface roughness and bond coating layer thinkness. That showed excellent undergrit blast time and bond coating layer; 60 sec and 0.15-0.33mm, respectively. The adhesive strength and densification of sprayed coating with air pressure were superior to those of without and fracture was mainly occured at alumina-bond coating interface. Under ambient atmosphere at $800^{\circ}C$, the oxides existed within bond coating layer promote diffusion of oxygen to lower durability of sprayed specimens. In this case, fracure was occured at sudstrate-bond coating interface.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.4
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• pp.39-46
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• 2017

This paper presents the fabrication of ceramic insulation layer on metallic heat spreading substrate, i.e. an insulated metal substrate, for planar type heater. Aluminum alloy substrate is preferred as a heat spreading panel due to its high thermal conductivity, machinability and the light weight for the planar type heater which is used at the thermal treatment process of semiconductor device and display component manufacturing. An insulating layer made of ceramic dielectric film that is stable at high temperature has to be coated on the metallic substrate to form a heating element circuit. Two technical issues are raised at the forming of ceramic insulation layer on the metallic substrate; one is delamination and crack between metal and ceramic interface due to their large differences in thermal expansion coefficient, and the other is electrical breakdown due to intrinsic weakness in dielectric or structural defects. In this work, to overcome those problem, selected metal oxide buffer layers were introduced between metal and ceramic layer for mechanical matching, enhancing the adhesion strength, and multi-coating method was applied to improve the film quality and the dielectric breakdown property.

• The Korean Journal of Ceramics
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• v.3 no.2
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• pp.73-81
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• 1997

In this paper, it is intended to present more reproducible and quantitative method for adhesion assemssement. In scratch test, micromechanical analysis on the stress state beneath the indenter was carried out considering the additional blister field. The interface adhesion was quantified as work of adhesion through Griffith energy approach on the basis of the analyzed stress state. The work of adhesion for DLC film/WC-Co substrate calculated through the proposed analysis shows the identical value regardless of distinctly different critical loads measured with the change of film thickness and scratching speed. On the other hand, uniaxial loading was imposed on DCL film/Al substrate, developing the transverse film cracks perpendicular to loading direction. Since this film cracking behavior depends on the relative magnitude of adhesion strength to film fracture strength, the quantification of adhesion strength was given a trial through the micromechanical analysis of adhesion-dependence of film cracking patterns. The interface shear strength can be quantified from the measurement of strain $\varepsilon$s and crack spacing $\lambda$ at the cessation of film cracking.

• The Korean Journal of Ceramics
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• v.2 no.2
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• pp.95-101
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• 1996

Variations of the leakage current behaviors and interface potential barrier $({\Phi}_B)$ of rf-sputter deposited (Ba, Sr)$TiO_3$ (BST) thin films with thicknesses ranging from 20 nm to 150nm are investigated as a function of the thickness and bias voltages. The top and bottom electrodes are dc-sputter-deposited Pt films. ${\Phi}_B$ critically depends on the BST film deposition temperature, postannealing atmosphere and time after the annealing. The postannealing under $N_2$ atmosphere results in a high interface potential barrier height and low leakage current. Maintaining the BST capacitor in air for a long time reduces the ${\Phi}_B$ from about 2.4 eV to 1.6 eV due to the oxidation. ${\Phi}_B$ is not so dependent on the film thickness in this experimental range. The leakage conduction mechanism is very dependent on the BST film thickness; the 20 nm thick film shows tunneling current, 30 and 40 nm thick films show Shottky emission current.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.35.1-35
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• 2003

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.187.1-187
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• 2002