• 한국세라믹학회지
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• 제32권1호
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• pp.31-36
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• 1995

(100) Si was oxidized in N2O ambient, and the film properties of oxynitride dielectrics were compared with pure SiO2. The growth rate, after pre-oxidation in O2/N2 ambient with raising temperature, is faster than that of O2/N2O treatment during the same condition. Nitrogen piles up at the interface of SiO2 and Si substrate and the content is about 2atom%. Comparing with pure SiO2, oxynitride dielectrics shows less dielectric breakdown failures and flat-band voltage shift, and good diffusion barrier property to dopant(BF2) is also observed.

• 한국세라믹학회지
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• 제32권1호
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• pp.106-112
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• 1995

In order to examine the effect of CuO and Al2O3 addition on the electrical conductivity of ZnO, both Al2O3 (0, 1, 2, 5, 10at.%) and CuO (1, 5at.%) were added to ZnO. Al2O3 addition (~2at.% Al) increased the total electrical conductivity of ZnO which was already decreased by CuO doping effect Above solid solubility of Al (~2at.%), ZnAl2O4 formed and the total electrical conductivity decreased due to the decrease of sintered density. Impedance measurements were used to know the reason and degree of contribution of three resistive elements, ZnO grain, ZnO/CuO, and ZnO/ZnO grain boundaries, to the total electrical conductivity changed.

• 한국세라믹학회지
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• 제33권3호
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• pp.251-258
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• 1996

The reactions between an active metal brazing alloy and interlayers together with the effects of interlayer type on the interfacial microstructure change were investiaged for silicon nitride/stainless steel joint. The bending strengths were measured for joints with Mo, Cu, Ni interlayer type of different thicknesses. It was found that the interlayer with a low yield strength value is effective to improve the bending strength of the Si3N4/stainless steel joint. The maximum joint strength obtained at room temperature for a laminated Cu/Mo interlayer was about 460 MPa. The combined use of Mo and thin Cu layer was found to be effective in enhancing the bending strength for the Si3N4/S.S.316 joint.

• The Korean Journal of Ceramics
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• 제4권1호
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• pp.43-46
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• 1998

We have investigated the formation and thermal stability of cobalt aluminide(CoAl) thin films on GaAs. In order to obtain cobalt-aluminide thin films, we deposited a multilayer of Co/Al on GaAs, and subsequently annealed the samples at 80$0^{\circ}C$ for 30 min. After annealing, single-phase cobalt aluminide was produced showing a flat and uniform interface with GaAs. which indicates that cobalt aluminide (CoAl) is thermally stable with GaAs. In addition, the adherence and mechanical properties of the as-deposited, and annealed Co/Al multilayer structure on GaAs are compatible with those required for device fabrication processes. The electrical property of the CoAl/GaAs contact shows rectifying characteristics, indicating that the diodes were usable as rectifying gate electrodes.

• 대한치과의사협회지
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• 제22권9호통권184호
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• pp.781-792
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• 1984

The purpose of this experiment was to study the effects of laser on a base metal alloy for dental casting. In this study, microhardness, corrosion resistance, wear resistance, interaction behavior of metal-ceramic interface, and bond strength were tested before and after the laser treatment for metal-ceramic alloy. The conclusion arised from this study are as follows: 1. The hardness of lased area was higher than that of unlased area. 2. The corrosion resistance was higher in lased specimen than in unlased specimen. 3. the wear resistance was higher in Iased specimen than in unlased specimen. 4. The EDAX showed that Mo, Si and Al were increased in lased surface but Ni and Cr not increased. 5. The SEM of lased area revealed a typical microstructure. 6. The bond strength of lased specimen was increased in 11.2% than of unlased specimen.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2001년도 춘계학술대회 논문집(한국공작기계학회)
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• pp.72-77
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• 2001

The use of hexagonal ceramic inserts for copper extrusion dies offers significant technical and economic advantages over other forms of manufacture. In this paper the data on the loading of the tools is determined from a commercial FEM package as the contact stress distribution on the die-workpiece interface and as temperature distributions in the die. This data can be processed as load input data for a finite element die-stress analysis. Process simulation and stress analysis are thus combined during the design, and a data exchange program has been developed that enables optimal design of the dies taking into account the elastic deflections generated in shrink fitting the die inserts and that caused by the stresses generated in the process. The stress analysis of the dies is used to determine the stress conditions on the ceramic insert by considering contact and interference effects under both mechanical and thermal loads.

• 한국세라믹학회지
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• 제35권5호
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• pp.486-492
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• 1998

Silicon carbide (SiC) thin films were deposited on the porous silicon substrates by chemical vapour de-position(CVD) using MTS as a source material. The deposited films were ${\beta}$-SiC with poor crystallity con-firmed by XRD measurement. It was considered that the films showed the mixed characteistics of cry-stalline and amorphous SiC where amorphous SiC where amorphous SiC played a role of buffer layer in interface between as-dep films and Si substrate. The buffer layer reduced lattice mismatch to some extent the generally occurs when SiC films are deposited on Si. The low temperature (10K) PL (phtoluminescence) studies showed two broad bands with peaks at 600 and 720 for the films deposited at 1100$^{\circ}C$ The maximum PL peak of the crystalline SiC was observed at 600 nm and the amrophous SiC of 720 nm was also confirmed. PL peak due the amorphous SiC was smaller than that of the crystalline SiC, PL of porous Si might be disapperared due to densification during heat treatment.

• 한국세라믹학회지
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• 제31권5호
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• pp.529-537
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• 1994

The principle of the Isothermal Capacitance Transient Spectroscopy[ICTS] were explained to measure the electronic trap levels in oxide ceramics. The measurement apparatus and the theory of the ICTS were described in detail. The trap energy evaluation was performed for the ZnO varistor and BaTiO3 ceramics. The grain boundary interface trap levels were detected at -5$0^{\circ}C$~6$0^{\circ}C$ in the case of ZnO varistor and PTCR samples, and the bulk trap levels were detected at 2$0^{\circ}C$~60~ in BaTiO3. The trap energy levels of the above samples could be directly determined by ICTS measurement.

• 한국세라믹학회지
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• 제23권1호
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• pp.1-6
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• 1986

The shrinkage rate of solid state sintering has been theoretically derived by combining the rate equation of material transport and the net free energy change resulting from the decrease of solid-vapor interface and the increase of grain boundary during sintering. For a sinteing model an idealized situation of the spherical particles with BCC packing was taken as the initial condition and the shrinkage was assumed to occur by forming the flat circualr grain boundaries on each particle. The plotted shrinkage rates as a function of grain boundary to surface energy ratio $(gamma_g/gamma_s)$ have shown that the relative density increases linearly at the initial stage of sintering but the shrinkage rate is decreased upon further sintering due to a decrease in driving force for densificaton. It has been also shown that the densification is critically affected by the $gamma_g/gamma_s$ ratio. In order to get the complete densificatin the ratio should be less than $sqrt{3}$. Any additive or atmospheric condition causing the decrease of$_g/gamma_s$ ratio will enhance sintering.

• 한국세라믹학회지
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• 제28권11호
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• pp.859-864
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• 1991

High quality lead titanate thin films were fabricated by spin coating on a silicon substrate. The resulting dried gel layers were uniform in thickness through 2$\times$2 $\textrm{cm}^2$ area, and polycrystalline perovskite structures developed almost crack free with a heat treatment above 50$0^{\circ}C$ in films with thickness above 360 nm. Metastable pyrochlore structures were observed in films with thickness of 160 nm when heat treated at 500 and $600^{\circ}C$, but these structure did not appear in films with thickness of 360 nm. The thickness dependence in crystal structure of films was studied. by varying the substrate condition and analyzing the interface between the film and substrate. In native oxide films on silicon stbstrates, amorphous dried gel layers were heterogeneously nucleated. Metastable cubic pyrochlore structure could be crystallized in amorphous native oxide.