• Proceedings of the Korea Association of Crystal Growth Conference
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• 2000.06a
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• pp.151-163
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• 2000

A polymerized organic-inorganic complexation route is introduced for the synthesis of oxide ceramic powders. Polyvinyl alcohol was used as the organic carrier for precursor ceramic gel. Porous and soft powders, which have a high specific surface area, were obtained after calcinating the aerated precursors. The PVA content and its degree of polymerization had a significant influence on the homogeneity of the final powder. In particular, attrition milling process with the porous powder resulted in ultra-fine particles. In the case of the preparation of cordierite powder, nano-size powder, which has a high specific surface area of 181 ㎡/g, was obtained by the milling process. The complexation route was also applied to the synthesis of unstable phase in room temperature like beta-cristobalite, high temperature form of silica.

• Journal of the Korean Ceramic Society
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• v.39 no.4
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• pp.336-340
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• 2002

Pure and nano-sized $TiO_2$ and $CaTiO_3$ powders were fabricated by a polymeric steric entrapment route and planetary milling process. An ethylene glycol was used as a polymeric carrier for the preparation of organic-inorganic precursors. Titanium isopropoxide and calcium nitrate were dissolved in liquid-type ethylene glycol without any precipitation. At the optimum amount of the polymer, the metal cations were dispersed in solution and a homogeneous polymeric network was formed. The dried precursor ceramic gels were turned to porous powders through calcination process. The porous powders were crystallized at low temperatures and the crystalline powders were planetary milled to nano size.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.438-438
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• 2009

We have investigated the effect of forming gas annealing for Upgraded Metallurgical Grade (UMG)-silicon solar cell in order to obtain low-cost high-efficiency cell using post deposition anneal at a relatively low temperature. We have observed that high concentration hydrogenation effectively passivated the defects and improved the minority carrier lifetime, series resistance and conversion efficiency. It can be attributed to significantly improved hydrogen-passivation in high concentration hydrogen process. This improvement can be explained by the enhanced passivation of silicon solar cell with antireflection layer due to hydrogen re-incorporation. The results of this experiment represent a promising guideline for improving the high-efficiency solar cells by introducing an easy and low cost process of post hydrogenation in optimized condition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.6
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• pp.496-500
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• 2019

In this study, we investigate the effect of an Sb-deficiency on the thermoelectric properties of double-filled n-type skutterudite ($In_{0.05}Yb_{0.15}Co_4Sb_{12-x}$). Samples were prepared by encapsulated induction melting, consecutive long-time annealing, and finally spark plasma sintering processes. The Sb-deficient sample contained a $CoSb_2$ secondary phase. Both the double-filled n-type skutterudite pristine and Sb-deficient samples showed metallic behavior in electrical conductivity with increasing temperature. The carrier concentration of the Sb-deficient sample decreased compared with that of the pristine sample. Due to a decrease in carrier concentration, the Sb deficient sample showed decreased electrical conductivity and an increased Seebeck coefficient compared with the conductivity and coefficient of the pristine sample. Furthermore, the Sb deficient sample showed an increase in the power factor (${\sigma}{\cdot}S^2$); the power factor maximum shifted to athe lower temperature side than ones of the pristine sample. As a result, the Sb-deficient sample represents an improved average figure of merit (ZT) and a $ZT_{max}$ temperature lower than that of the pristine sample. Therefore, we propose that Sb-deficient double-filled n-type skutterudite thermoelectric material ($In_{0.05}Yb_{0.15}Co_4Sb_{12-x}$) be used in the 573~673 K temperature range.

• Journal of Powder Materials
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• v.16 no.6
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• pp.431-437
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• 2009

Various inorganic fillers improve the thermal conductivity and physical properties of organic products. Alumina has been used a representative filler in the heat radiation sheet for the heat radiation of electric device. The high filling rate of alumina increases the thermal conductivity and properties of products. We successfully developed the spherical alumina by flame fusion process using the oxygen burner with LPG fuel. In the high temperature flame (2500$\sim$3000$^{\circ}C$) of oxygen burner, sprayed powders were melting and then rotated by carrier gas. This surface melting and rotation process made spherical alumina. Especially effects of chemical composition and particle size of stating materials on the melting behavior of starting materials in the flame and spheroidization ratio were investigated. As a result, spheroidization ratio of boehmite and aluminum hydroxide with endothermic reaction of dehydration process was lower than that of the sintered alumina without dehydration reaction.

• Journal of Soil and Groundwater Environment
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• v.10 no.1
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• pp.35-42
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• 2005

This research was investigated the applicability of the biofiltration technology for the removal of volatile organic carbons (VOCs) produced from the bioremediation of oil contaminated soil. Diesel was used as surrogate for oil and, two types of biofilter systems made of ceramic and polymer media were compared for the removal efficiencies of diesel VOCs at different inlet concentrations and space velocity (SV) conditions. During the first 30-d operation, the removal efficiencies of the biofilter packed with polymer and the biofilter packed with ceramic were investigated at constant SV of $153\;h^{-1}$ When inlet concentrations of diesel VOCs were below 10 ppmv, the average removal efficiencies of the polymer biofilter and the ceramic biofilter were average $67\%\;and\;75\%$, respectively. When the inlet concentration increased to 30 ppmv, the VOC removal efficiency in the polymer biofilter was $80\%$, while the average removal efficiency in the ceramic biofilter was $60\%. Effect of the inlet concentration and SV on the removal efficiency of total diesel VOCs was investigated. As SV increased from $153\;h^{-1}$ to $204\;h^{-1}$ and $306\;h^{-1}$, the removal efficiency of total diesel VOCs was decreased gradually. The average removal efficiency of the biofilter packed with polymer carrier was decreased from $82\%\;to\;80\%\;and\;77\%$. The biofilter packed with polymer carrier showed that the removal efficiency of benzene and toluene were maintained within the range of $81\%\~86\%$. In contrast, for the biofilter packed with ceramic carrier, when SV increased from $153\;h^{-1}$ to $204\;h^{-1}$ and $306\;h^{-1}$, the removal efficiency of benzene decreased from $87\%\;to79\%\;and\;74\% . respectively. The removal efficiency of toluene decreased from $80\%\;to\;77\%\;and\;76\%$ at SV of $153\;h^{-1},\;204\;h^{-1}\;and\;306\;h^{-1}$, and $306\;h^{-1}$, respectively.

• Journal of the Korean Ceramic Society
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• v.51 no.3
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• pp.197-200
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• 2014

We investigated the influence of blistering on $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks passivation layers. $Al_2O_3$ film provides outstanding Si surface passivation quality. $Al_2O_3$ film as the rear passivation layer of a p-type Si solar cell is usually stacked with a capping layer, such as $SiO_2$, SiNx, and SiON films. These capping layers protect the thin $Al_2O_3$ layer from an Al electrode during the annealing process. We compared $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks through surface morphology and minority carrier lifetime after annealing processes at $450^{\circ}C$ and $850^{\circ}C$. As a result, the $Al_2O_3$/SiON stacks were observed to produce less blister phenomenon than $Al_2O_3$/SiNx:H stacks. This can be explained by the differences in the H species content. In the process of depositing SiNx film, the rich H species in $NH_3$ source are diffused to the $Al_2O_3$ film. On the other hand, less hydrogen diffusion occurs in SiON film as it contains less H species than SiNx film. This blister phenomenon leads to an increase insurface defect density. Consequently, the $Al_2O_3$/SiON stacks had a higher minority carrier lifetime than the $Al_2O_3$/SiNx:H stacks.

• Journal of Ceramic Processing Research
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• v.19 no.5
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• pp.372-377
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• 2018

MgO or gadolinium-doped ceria (GDC, $Ce_{0.9}Gd_{0.1}O_{2-{\delta}}$) was added as a promoter to improve the oxygen transfer kinetics of $MgMnO_3$ oxygen carrier material for chemical looping combustion. Neither MgO nor GDC reacted with $MgMnO_3$, even at the high temperature of $1100^{\circ}C$. The average oxygen transfer capacities of $MgMnO_3$, 5 wt% $MgO-MgMnO_3$, and 5 wt% $GDC-MgMnO_3$ were 8.74, 8.35, and 8.13 wt%, respectively. Although the addition of MgO or GDC decreased the oxygen transfer capacity, no further degradation was observed during their use in 5 redox cycles. The addition of GDC significantly improved the conversion rate for the reduction reaction of $MgMnO_3$ compared to the use of MgO due to an increase in the surface adsorption process of $CH_4$ via oxygen vacancies formed on the surface of GDC. On the other hand, the conversion rates for the oxidation reaction followed the order 5 wt% $GDC-MgMnO_3$ > 5 wt% $MgO-MgMnO_3$ >> $MgMnO_3$ due to morphological change. MgO or GDC particles suppressed the grain growth of the reduced $MgMnO_3$ (i.e., (Mg,Mn)O) and increased the specific surface area, thereby increasing the number of active reaction sites.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.6
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• pp.357-361
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• 2018

We demonstrated a crack-free ${\alpha}-Ga_2O_3$ on sapphire substrate by horizontal halide vapor phase epitaxy (HVPE). Oxygen-and gallium chloride-synthesized Ga metal and HCl were used as the precursors, and $N_2$ was used as the carrier gas. The HCl flow and growth temperature were controlled in the ranges of 10~30 sccm and $450{\sim}490^{\circ}C$, respectively. The surface of ${\alpha}-Ga_2O_3$ template grown at $470^{\circ}C$ was flat and the root-mean-square (RMS) roughness was ~2 nm. The full width at half maximum (FWHM) values for the symmetric-plane diffractions, were as small as 50 arcsec and those for the asymmetric-plane diffractions were as high as 1,800 arcsec. The crystal quality of ${\alpha}-Ga_2O_3$ on sapphire can be controlled by varying the HCl flow rate and growth temperature.

• Journal of the Korean Ceramic Society
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• v.41 no.2
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• pp.151-157
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• 2004

Because of the excellent thermal and chemical properties of mullite and cordierite as the stable oxide ceramic materials, they were widely used from engineering materials to electronic materials. Notwithstanding of their high demands, mullite was synthesised because it is not existed in nature. It is also difficult to produce cordierite of fine powder with high purity due to the narrow range of synthetic temperature. Mullite was synthesised by solid state reaction. However, synthesized mullite has been inhomogeneous. Because of the facts, various synthetic methods have been studied so far including sol-gel method. The purpose of this study is to synthesis mullite and cordierite of fine powder with high purity at the lower temperature by solution-polymerization route using PVA as a polymer carrier, which is an economical method by using low cost materials. As a result, mullite and cordierite were produced with mono crystal phase at 1200$^{\circ}C$ and 1250$^{\circ}C$, respectively, and their surface area over 20 ㎡/g.