• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 2000년도 Proceedings of 2000 International Nano Crystals/Ceramics Forum and International Symposium on Intermaterials
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• pp.151-163
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• 2000

A polymerized organic-inorganic complexation route is introduced for the synthesis of oxide ceramic powders. Polyvinyl alcohol was used as the organic carrier for precursor ceramic gel. Porous and soft powders, which have a high specific surface area, were obtained after calcinating the aerated precursors. The PVA content and its degree of polymerization had a significant influence on the homogeneity of the final powder. In particular, attrition milling process with the porous powder resulted in ultra-fine particles. In the case of the preparation of cordierite powder, nano-size powder, which has a high specific surface area of 181 ㎡/g, was obtained by the milling process. The complexation route was also applied to the synthesis of unstable phase in room temperature like beta-cristobalite, high temperature form of silica.

• 한국세라믹학회지
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• 제39권4호
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• pp.336-340
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• 2002

Pure and nano-sized $TiO_2$ and $CaTiO_3$ powders were fabricated by a polymeric steric entrapment route and planetary milling process. An ethylene glycol was used as a polymeric carrier for the preparation of organic-inorganic precursors. Titanium isopropoxide and calcium nitrate were dissolved in liquid-type ethylene glycol without any precipitation. At the optimum amount of the polymer, the metal cations were dispersed in solution and a homogeneous polymeric network was formed. The dried precursor ceramic gels were turned to porous powders through calcination process. The porous powders were crystallized at low temperatures and the crystalline powders were planetary milled to nano size.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.438-438
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• 2009

We have investigated the effect of forming gas annealing for Upgraded Metallurgical Grade (UMG)-silicon solar cell in order to obtain low-cost high-efficiency cell using post deposition anneal at a relatively low temperature. We have observed that high concentration hydrogenation effectively passivated the defects and improved the minority carrier lifetime, series resistance and conversion efficiency. It can be attributed to significantly improved hydrogen-passivation in high concentration hydrogen process. This improvement can be explained by the enhanced passivation of silicon solar cell with antireflection layer due to hydrogen re-incorporation. The results of this experiment represent a promising guideline for improving the high-efficiency solar cells by introducing an easy and low cost process of post hydrogenation in optimized condition.

• 한국전기전자재료학회논문지
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• 제32권6호
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• pp.496-500
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• 2019

In this study, we investigate the effect of an Sb-deficiency on the thermoelectric properties of double-filled n-type skutterudite ($In_{0.05}Yb_{0.15}Co_4Sb_{12-x}$). Samples were prepared by encapsulated induction melting, consecutive long-time annealing, and finally spark plasma sintering processes. The Sb-deficient sample contained a $CoSb_2$ secondary phase. Both the double-filled n-type skutterudite pristine and Sb-deficient samples showed metallic behavior in electrical conductivity with increasing temperature. The carrier concentration of the Sb-deficient sample decreased compared with that of the pristine sample. Due to a decrease in carrier concentration, the Sb deficient sample showed decreased electrical conductivity and an increased Seebeck coefficient compared with the conductivity and coefficient of the pristine sample. Furthermore, the Sb deficient sample showed an increase in the power factor (${\sigma}{\cdot}S^2$); the power factor maximum shifted to athe lower temperature side than ones of the pristine sample. As a result, the Sb-deficient sample represents an improved average figure of merit (ZT) and a $ZT_{max}$ temperature lower than that of the pristine sample. Therefore, we propose that Sb-deficient double-filled n-type skutterudite thermoelectric material ($In_{0.05}Yb_{0.15}Co_4Sb_{12-x}$) be used in the 573~673 K temperature range.

• 한국분말재료학회지
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• 제16권6호
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• pp.431-437
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• 2009

Various inorganic fillers improve the thermal conductivity and physical properties of organic products. Alumina has been used a representative filler in the heat radiation sheet for the heat radiation of electric device. The high filling rate of alumina increases the thermal conductivity and properties of products. We successfully developed the spherical alumina by flame fusion process using the oxygen burner with LPG fuel. In the high temperature flame (2500$\sim$3000$^{\circ}C$) of oxygen burner, sprayed powders were melting and then rotated by carrier gas. This surface melting and rotation process made spherical alumina. Especially effects of chemical composition and particle size of stating materials on the melting behavior of starting materials in the flame and spheroidization ratio were investigated. As a result, spheroidization ratio of boehmite and aluminum hydroxide with endothermic reaction of dehydration process was lower than that of the sintered alumina without dehydration reaction.

• 한국지하수토양환경학회지:지하수토양환경
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• 제10권1호
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• pp.35-42
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• 2005

유류로 오염된 토양의 생물학적 복원에서 휘발성 유기화합물(VOCs)을 제거하기 위한 biofilter의 적용 가능성에 대하여 알아보았다 대표 오염물질로 diesel을 선정한 후 총 86일 동안 ceramic과 polymer,이 두 종류의 담체를 사용하여 SV(공간속도)와 유량, 입구농도 등을 조사하여 최적의 운전조건을 찾고자하였다. 운전초기 30일간 SV를 $153\;h^{-1}$ 고정하여 입구농도를 증가시키며 ceramic 및 polymer biofilter의 제거효율 변화에 대하여 알아보았다. Ceramic 및 polymer 담체에서는 총 VOCs의 입구농도가 10 ppmv 이하일 때 각각 평균 $67\%$ 및 $15\%$의 제거효율을 보였으나, 입구농도를 30 ppmv까지 증가시켰을 때 ceramic 담체는 제거 효율이 $60\%$까지 저하되었고, polymer 담체의 경우 $80\%$의 제거효율을 보였다. 또한, Diesel VOCs의 입구농도와 공간 속도의 증가에 따른 총 VOCs의 제거효율에 미치는 영향을 알아보았다. 공간속도가 $153\;h^{-1}$에서 $204\;h^{-1}$와 $306\;h^{-1}$로 증가함에 따라 총 VOCs의 제거 효율은 점차적으로 감소하여 polymer 담체의 경우 평균 제거효율이 $82\%$에서 $80\%,\;77\%$로 약 $5\%$ 감소함을 관찰하였다. Polymer 담체에서는 공간속도의 증가에도 불구하고 benzene과 toluene모두 약 $81\~86\%$의 영역에서 일정한 제거효율을 보이는 것으로 나타났다. 반면, ceramic 담체에서 benzene의 경우 공간속도 $153\;h^{-1}$에서 평균 $87\%$의 제거효율을 보였고, 공간속도가 $204\;h^{-1}$에서 $306\;h^{-1}$로 증가함에 따라 $79\%$에서 $74\%$로 약 $5\%$가 감소하였다. Toluene의 제거효율은 공간속도의 증가에 따라 $80\%$에서 $76\%$로 $4\%$ 감소하였다.

• 한국세라믹학회지
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• 제51권3호
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• pp.197-200
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• 2014

We investigated the influence of blistering on $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks passivation layers. $Al_2O_3$ film provides outstanding Si surface passivation quality. $Al_2O_3$ film as the rear passivation layer of a p-type Si solar cell is usually stacked with a capping layer, such as $SiO_2$, SiNx, and SiON films. These capping layers protect the thin $Al_2O_3$ layer from an Al electrode during the annealing process. We compared $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks through surface morphology and minority carrier lifetime after annealing processes at $450^{\circ}C$ and $850^{\circ}C$. As a result, the $Al_2O_3$/SiON stacks were observed to produce less blister phenomenon than $Al_2O_3$/SiNx:H stacks. This can be explained by the differences in the H species content. In the process of depositing SiNx film, the rich H species in $NH_3$ source are diffused to the $Al_2O_3$ film. On the other hand, less hydrogen diffusion occurs in SiON film as it contains less H species than SiNx film. This blister phenomenon leads to an increase insurface defect density. Consequently, the $Al_2O_3$/SiON stacks had a higher minority carrier lifetime than the $Al_2O_3$/SiNx:H stacks.

• Journal of Ceramic Processing Research
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• 제19권5호
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• pp.372-377
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• 2018

MgO or gadolinium-doped ceria (GDC, $Ce_{0.9}Gd_{0.1}O_{2-{\delta}}$) was added as a promoter to improve the oxygen transfer kinetics of $MgMnO_3$ oxygen carrier material for chemical looping combustion. Neither MgO nor GDC reacted with $MgMnO_3$, even at the high temperature of $1100^{\circ}C$. The average oxygen transfer capacities of $MgMnO_3$, 5 wt% $MgO-MgMnO_3$, and 5 wt% $GDC-MgMnO_3$ were 8.74, 8.35, and 8.13 wt%, respectively. Although the addition of MgO or GDC decreased the oxygen transfer capacity, no further degradation was observed during their use in 5 redox cycles. The addition of GDC significantly improved the conversion rate for the reduction reaction of $MgMnO_3$ compared to the use of MgO due to an increase in the surface adsorption process of $CH_4$ via oxygen vacancies formed on the surface of GDC. On the other hand, the conversion rates for the oxidation reaction followed the order 5 wt% $GDC-MgMnO_3$ > 5 wt% $MgO-MgMnO_3$ >> $MgMnO_3$ due to morphological change. MgO or GDC particles suppressed the grain growth of the reduced $MgMnO_3$ (i.e., (Mg,Mn)O) and increased the specific surface area, thereby increasing the number of active reaction sites.

• 한국전기전자재료학회논문지
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• 제31권6호
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• pp.357-361
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• 2018

We demonstrated a crack-free ${\alpha}-Ga_2O_3$ on sapphire substrate by horizontal halide vapor phase epitaxy (HVPE). Oxygen-and gallium chloride-synthesized Ga metal and HCl were used as the precursors, and $N_2$ was used as the carrier gas. The HCl flow and growth temperature were controlled in the ranges of 10~30 sccm and $450{\sim}490^{\circ}C$, respectively. The surface of ${\alpha}-Ga_2O_3$ template grown at $470^{\circ}C$ was flat and the root-mean-square (RMS) roughness was ~2 nm. The full width at half maximum (FWHM) values for the symmetric-plane diffractions, were as small as 50 arcsec and those for the asymmetric-plane diffractions were as high as 1,800 arcsec. The crystal quality of ${\alpha}-Ga_2O_3$ on sapphire can be controlled by varying the HCl flow rate and growth temperature.

• 한국세라믹학회지
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• 제41권2호
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• pp.151-157
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• 2004

안정한 산화물 세라믹스 재료로서 mullite와 cordierite는 우수한 열적, 화학적 특성 때문에 구조재료에서부터 전자재료에 이르는 폭넓은 용도에 사용되어지고 있다. 그럼에도 불구하고, mullite는 천연에서는 산출되지 않기 때문에 합성에 의해서만 제조되고 있다. 또한, cordierite는 합성온도폭이 좁아 고순도의 미립 분말을 제조하기 어려운 재료이다. Mullite 역시 고상반응법 등의 합성법으로는 균질한 재료로의 합성이 어렵다. 그렇기 때문에 sol-gel법 등의 다양한 합성법에 의해 이들 재료에 관한 연구가 계속되고 있다. 본 연구에서는 국내의 원료를 이용하여 sol-gel법에서와 같은 고순도의 미립의 분말을 좀 더 낮은 온도에서 합성이 가능하며, 상대적으로 저가의 원료를 사용함으로서 경제적인 방법인 PVA를 polymer carrier로서 이용한 solution-polymerzation 합성법에 의해 mullite와 cordierite를 합성하였다. 그 결과, mullite, cordierite는 각각 120$0^{\circ}C$, 125$0^{\circ}C$에서 단일의 결정상이 생성되었으며 비표면적 20$m^2$/g 이상의 미립의 분말이 생성됨을 확인할 수 있었다.