• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.126.1-126
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• 2003

• Particle and aerosol research
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• v.9 no.3
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• pp.127-132
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• 2013

Recently, Aerosol Deposition method has attracted considerable attention because of its advantages to produce ceramic coatings on various substrates at room temperature. This method is strongly dependent on the raw powder, which should have high mobility with carrier gas and moderate mechanical strength to be crushed onto the substrate. In this report, the effects of the ceramic granules' compressive strength on the ceramic coating formation are discussed. The ceramic granules were prepared by spray-drying method and heat treated at various temperatures. It was found that at the moderate mechanical strength of ceramic granules gave more effective film formation behavior during Aerosol Deposition method.

• Journal of the Korean Ceramic Society
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• v.33 no.5
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• pp.514-518
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• 1996

Sb doped SnO2(ATO: Antinomy doped Tin Oxide) thin films were prepared by a DC magnetron spttuering method using an oxide target and the electrical characteristics of ATO films were investigated. The experimen-tal conditions are as follows :Ar flow rate ; 0~100 sccm deposition tempera-ture ; 250~40$0^{\circ}C$ DC sputter powder ; 150~550W and sputteing pressure ; 2~7 mTorr, The thickness of depositied ATO films were 600$\AA$~1100 $\AA$ ranges. The resistivity of ATO films was decreased due to the increase of the crystallinity of ATO films with deposition temperature. The decrease of carrier concentration of films with the increase of oxygen flow rate and working pressure is responsible for the increase of resistivity. Increasing of sputtering power raised the resistivity of films by decreasing the carrier mobility.

• Journal of the Korean Ceramic Society
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• v.50 no.3
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• pp.173-179
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• 2013

Wurtzite nanomaterials, such as ZnO, GaN, and InN, have become a subject of great scientific and technological interest as they simultaneously have piezoelectric and semiconductor properties. In particular, the piezoelectric potential (piezopotential) created by dynamic straining in the nanowires drives a transient flow of current in the external load, converting mechanical energy into electricity. Further, the piezopotential can be used to control the carrier generation, transport, separation, and/or recombination at the metal-semiconductor junction or p-n junction, which is called the piezophototronic effect. This paper reviews the recent advances on the piezophototronic effect to better use the piezophototronic effect to control the carrier generation, transport, separation and/or recombination for improving the performance of optoelectronic devices, such as photon detectors, solar cells and LEDs. This paper also discusses several research and design studies that have improved the output performance of optoelectronic devices.

• Journal of the Korean Ceramic Society
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• v.51 no.4
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• pp.243-247
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• 2014

Spherical NiO-YSZ particles were synthesized by ultrasonic spray pyrolysis (USP). The morphology of the synthesized particles can be modified by controlling parameters such as precursor pH, carrier-gas flow-rate, and temperature of the heating zone. The synthesized spherical NiO-YSZ particles have rough surface morphology at high carrier-gas flow-rates due to rapid gas exhaustion and insufficient particle ordering. The Ni-YSZ cermet anode synthesized by ultrasonic spray pyrolysis at a flow rate of l L/min, with precursor solution at pH4, showed a higher maximum power density of 256 $mW/cm^2$ compared to a conventionally mixed Ni-YSZ anode (185 $mW/cm^2$) at $800^{\circ}C$. While the area-specific resistance of conventionally mixed Ni-YSZ anodes increases gradually with operation time (indicating performance degradation), the Ni-YSZ anode synthesized by USP does not exhibit any performance degradation, even after 500 h.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.169-173
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• 2011

In this study, Al-N codoped p-type zinc oxide (ZnO) thin films were deposited on Si and homo-buffer layer templates in a mixture of $N_2$ and $O_2$ gas with ceramic ZnO:(2 wt% $Al_2O_3$) as a sputtering target using DC- magnetron sputtering. X-ray diffraction spectra of two-theta diffraction showed that all films have a predominant (002) peak of ZnO Wurtzite structure. As the $N_2$ fraction in the mixed $N_2$ and $O_2$ gases increased, field emission secondary electron microscopy revealed that the surface appearance of codoped films on Si varied from smooth to textured structure. The p-type ZnO thin films showed carrier concentration in the range of $1.5{\times}10^{15}-2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2-2.864 ${\Omega}cm$, and mobility in the range of $3.99-31.6\;cm^2V^{-1}s^{-1}$ respectively.

• Journal of the Korean Ceramic Society
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• v.35 no.10
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• pp.1007-1013
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• 1998

The samples of Bi2Sr2Ca1-xNaxCu2O8+y with various carrier concentration were synthesized by substituting Na for Ca ion. The superconducting properties hall coefficients and X-ray powder diffraction were measur-ed the sampled. Single phase samples were obtained for 0$\leq$x<0.3 of Bi2Sr2Ca1-xNaxCu2O8+y In the single phase the critical temperature. {{{{ { T}_{c } }} and carrier concentration increase with the increase of Na concentration pass through a maximum and then decreases. In the range of x$\geq$0.7 to the Na doped samples however we observed the metal-semiconductor transition. The c-axis seemed to decrease and a and b-axes increase with increasing Na concentration in the single phase. Decreasing of c-axis while increasing x is due to the smaller size of {{{{ {Na}^{+1 } }} ions to the {{{{ { Ca}^{+2 } }} ions. In the range of x>0.3 however the trend becomes ambiguous due to the inclusion of the 10K phase and impurity phase.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.637-641
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• 2012

Due to its high production cost and relatively high energy consumption during the Siemens process, poly-silicon makers have been continuously and eagerly sought another silicon route for decades. One candidate that consumes less energy and has a simpler acidic and metallurgical purification procedure is upgraded metallurgical-grade (UMG) silicon. Owing to its low purity, UMG silicon often requires special steps to minimize the impurity effects and to remove or segregate the metal atoms in the bulk and to remove interfacial defects such as precipitates and grain boundaries. A process often called the 'gettering process' is used with phosphorus diffusion in this experiment in an effort to improve the performance of silicon solar cells using UMG silicon. The phosphorous gettering processes were optimized and compared to the standard POCl process so as to increase the minority carrier lifetime(MCLT) with the duration time and temperature as variables. In order to analyze the metal impurity concentration and distribution, secondary ion mass spectroscopy (SIMS) was utilized before and after the phosphorous gettering process.

• Journal of the Korean Ceramic Society
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• v.50 no.4
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• pp.288-293
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• 2013

Zn-In-Sn-O films were prepared at room temperature by combinatorial RF-magnetron co-sputtering system. The cationic contents of the films were varied using a compositionally combinatorial technique. The effects of the oxygen partial pressure and film compositionon the structural and electrical properties were investigated. The Zn-In-Sn-O films deposited at Ar gas atmosphere showed an amorphous phaseirrespective of the film composition. However, the amorphous Zn-In-Sn-O films with a Zn content below 30.0 at% were converted into a bixbyite type-ITO polycrystalline phase with an increase in the oxygen partial pressure. The resistivity, carrier concentration, and Hall mobility were strongly affected by the oxygen partial pressure and chemical composition of the film. At sufficiently high carrier densities above $5{\times}10^{18}cm^{-3}$, the conduction behavior of amorphous Zn-In-Sn-O film changes from thermally activated to degenerate band conduction accompanied with high mobility.

• Journal of the Korean Ceramic Society
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• v.56 no.3
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• pp.302-307
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• 2019

The intrinsic oxygen-vacancy defects in ZnO have prevented the preparation of p-type ZnO with high carrier concentration. Therefore, in this work, the effect of the concentration of H₂O₂ (used as an oxygen source) on the oxygen-vacancy concentration in ZnO prepared by atomic layer deposition was investigated. The results indicated that the oxygen-vacancy concentration in the ZnO film decreased by the oxygen-rich growth conditions when using H₂O₂ as the oxygen precursor instead of a conventional oxygen source such as H₂O. The suppression of oxygen vacancies decreased the carrier concentration and increased the resistivity. Moreover, the growth orientation changed to the (002) plane, from the combined (100) and (002) planes, with the increase in H₂O₂ concentration. The passivation of oxygen-vacancy defects in ZnO can contribute to the preparation of p-type ZnO.