• 한국전자파학회논문지
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• 제21권6호
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• pp.617-626
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• 2010

본 논문에서는 광혼합 방식으로 서브 밀리미터 및 테라헤츠 대역 연속파 신호를 발생시키는 기법 중 가장 널리 사용되는 광반송파가 억제된 양측 대역 발생 방식(Double Sideband-Suppressed Carrier: DSB-SC)을 이용하여 발생된 연속파(Continuous Wave: CW) 신호의 위상 잡음 개선을 위하여 광신호의 편광과 위상 제어 기법을 제안하고 실험적으로 증명하였다. 광신호의 편광 및 위상 제어 기법은 일반적인 DSB-SC 신호와 DSB-SC 신호에 포함된 광반송파와 동일한 파장과 위상차를 가지며, 광반송파의 편광 성분 중 하나의 편광 성분만을 갖도록 편광제어된 광신호를 결합하여 광혼합하는 방법이다. 실험 및 측정 결과, 서브 밀리미터파 대역 CW 신호의 크기는 1.5 dB 증가하였으며, 위상 잡음 특성은 약 3 dB@10 kHz offset frequency 개선됨을 확인하였다. 따라서 본 논문의 결과는 광신호의 위상 및 편광 성분 제어만으로 광반송파를 효과적으로 억제하여 서브 밀리미터 및 테라헤르츠 대역 CW 신호의 특성을 개선함으로써 광혼합 방법을 이용한 밀리미터파 및 테라헤르츠파 대역 CW 신호 발생기의 저가화를 위한 기본적인 데이터로서 활용 가치가 높다.

• 대한전자공학회논문지TC
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• 제47권2호
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• pp.62-66
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• 2010

본 논문은 높은 Q 특성을 갖는 이중 H자 형태의 메타 전자파구조의 공진기를 적용한 발진기를 제안하였다. 제안된 발진기는 고성능의 주파수합성부에 적용하기 위한 것으로 저위상잡음 및 높은 출력 전력을 요구한다. 특히 이중 H자 형태의 메타 전자파구조(DHM)는 전기장의 커플링을 강하게 하여 발진 주파수에서 높은 Q 값을 갖도록 설계되었다. 이러한 특성을 통해 우수한 위상잡음 특성을 얻을 수 있다. 이중 H자 형태의 메타 전자파구조를 이용한 발진기는 레이더 시스템의 주파수 합성부에 적용하기 위한 X 대역 내 발진을 형성하였으며 출력 전력은 4.33 dBm, 위상잡음은 100 kHz 옵셋에서 -108 dBc를 얻을 수 있었다.

• 한국통신학회논문지
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• 제35권5A호
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• pp.513-518
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• 2010

전압제어 발진기의 위상잡음 특성을 개선하기 위해 결합 마이크로스트립라인을 이용하여 공진주파수를 동조하는 변형된 구조의 주파수 동조회로를 제안한다. 위상잡음 특성이 개선됨을 실험적으로 입증하기 위해 주파수 동조회로를 제외하면 같은 구조를 갖는 2개의 9.8GHz HEMT 전압제어 발진기를 설계 및 제작하였다. 측정결과 결합마이크로스트립라인의 주파수 동조회로를 갖는 제안된 구조의 전압제어 발진기가 일반적인 전압제어 발진기에 비해 100KHz 오프셋 지점에서 8dBc/Hz 이상의 위상잡음 특성 개선효과를 나타내었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권2호
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• pp.83-87
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• 2004

Phase noise performance and current consumption of Radio Frequency (RF) Voltage-Controlled Oscillator (VCO) are largely dependent on the Quality (Q) factor of inductor-capacitor (LC) tank. Because the Q-factor of LC tank is determined by on-chip spiral inductor, we designed, analyzed, and modeled on-chip differential inductor to enhance differential Q-factor, reduce current consumption and save silicon area. The simulated inductance is 3.3 nH and Q-factor is 15 at 2 GHz. Self-resonance frequency is as high as 13 GHz. To verify its use to RF applications, we designed 2 GHz differential LC VCO. The measurement result of phase noise is -112 dBc/Hz at an offset frequency of 100 kHz from a 2GHz carrier frequency. Tuning range is about 500 MHz (25%), and current consumption varies from 5mA to 8.4 mA using bias control technique. Implemented in $0.35-{\mu}m$ SiGe BiCMOS technology, the VCO occupies $400\;um{\times}800\;um$ of silicon area.

• ETRI Journal
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• 제37권3호
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• pp.460-470
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• 2015

Orthogonal frequency-division multiplexing (OFDM) is one of the most widely used technologies in current wireless communication systems and standards. Cognitive radio (CR) provides a robust solution to the problem of spectrum congestion as it offers opportunistic usage of frequency bands that are not occupied by primary users. Due to the underlying sensing, spectrum shaping, scaling, and interoperable capabilities of OFDM, it has been adapted as a best transmission technology for CR wireless systems. However, the performance of an OFDM-based CR wireless system is affected by the existence of narrowband interference (NBI) from other users. Further, due to carrier frequency offset in NBI sources, NBI energy may spread over all subcarriers of an OFDM signal. In this paper, a fixed Amplify-and-Forward (AF) relay that operates at a frequency band that is different from that of direct mode is introduced to suppress the effect of NBI. Analytical expressions are derived for outage probability in direct, AF-relay, and incremental relaying modes. The outage performance of the proposed AF relay-based CR network is proven to be better than that of direct mode.

• Journal of information and communication convergence engineering
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• 제13권2호
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• pp.139-143
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• 2015

A push-push voltage controlled dielectric resonator oscillator (VCDRO) with a modified frequency tuning structure using broadside couplers is investigated. The push-push VCDRO designed at 16 GHz is manufactured using a low temperature co-fired ceramic (LTCC) technology to reduce the circuit size. The frequency tuning structure using a broadside coupler is embedded in a layer of the A6 substrate by using the LTCC process. Experimental results show that the fundamental and third harmonics are suppressed above 15 dBc and 30 dBc, respectively, and the phase noise of push-push VCDRO is -97.5 dBc/Hz at an offset frequency of 100 kHz from the carrier. The proposed frequency tuning structure has a tuning range of 4.46 MHz over a control voltage of 1-11 V. This push-push VCDRO has a miniature size of 15 mm×15 mm. The proposed design and fabrication techniques for a push-push oscillator seem to be applicable in many space and commercial VCDRO products.

• 한국정보통신설비학회:학술대회논문집
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• 한국정보통신설비학회 2008년도 정보통신설비 학술대회
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• pp.441-446
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• 2008

In this papers, a PLDRO(Phase Locked Dielectric Resonator Oscillator) is designed and implemented at the oscillator in which fundamental frequency is 18.3 GHz. The proposed PLDRO so as to improve the PLDRO of the general structure is designed to the goal of the minimize of the size and the performance improvement. Three VCO(Voltage controlled Oscillator) and the power combiner improved the output power. A VCDRO(Voltage Controlled Dielectric Resonator Oscillator) is manufactured using a varactor diode to tune oscillating frequency electrically, and its phase is locked to reference frequency by SPD(Sampling Phase Detector). This product is fabricated on Teflon substrate with dielectric constant 2.2 and device is ATF -13786 of Ka-band using. This PLDRO generates an output power of 5.67 dBm at 18.3 GHz and has the characteristics of a phase noise of -80.10 dBc/Hz at 1 kHz offset frequency from carrier, the second harmonic suppression of -33 dBc. The proposed PLDRO can be used in Ka-band satellite applications

• 대한전자공학회논문지TC
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• 제38권4호
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• pp.11-17
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• 2001

본 논문에서는 High-Order QAM(Quandrature Amplitude Modulation)을 적용하는 모뎀에서 강인하고 넓은 범위의 주파수 포착 범위를 가지는 극성판단(Polarity Decision) 반송파 동기용 PD(Phase Detector) 알고리즘을 제안하고 이에 대한 평균 출력특성(S-curve)과 분산특성을 수학적으로 유도하여 기존의 DD(Decision Directed)방식과 비교 분석한다. 기존의 DD 방식의 선형영역은 256 QAM의 경우 $3.5^{\circ}{\sim}3.5^{\circ}$ 이었으나 제안한 알고리즘의 선형영역은 ${\gamma}-17.9$에서 $36^{\circ}{\sim}36^{\circ}$ 의 넓은 구간을 가진다. 또한 기존의 DD 방식에서는 256 QAM의 주파수 오프셋 포착 성능이 ${\pm}10\;KHz$ 이하였다. 이는 아날로그 front-end 회로에서 주파수 오프셋이 일반적으로 ${\pm}100\;KHz$ 정도까지 줄어들 수 잇는 것을 감안하면 AFC(Automatic Frequency Control) 또는 반송파 복구를 위한 보조적인 위상검출회로가 필요하게 됨을 의미한다. 그러나 제안된 극성판단 반송파 동기 알고리즘을 사용하면 보조적인 회로의 도움없이 SNR = 30 dB에서 최대 ${\pm}300\;KHz$의 주파수 오프셋까지도 포착 가능하다.

• International Journal of Precision Engineering and Manufacturing
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• 제8권4호
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• pp.22-26
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• 2007

We describe a new way of implementing absolute displacement measurements by exploiting the optical comb of a femtosecond pulse laser as a wavelength ruler, The optical comb is stabilized by locking both the repetition rate and the carrier offset frequency to an Rb clock of frequency standard. Multiwavelength interferometry is then performed using the quasi-monochromatic beams of well-defined generated wavelengths by tuning an external cavity laser diode consecutively to preselected light modes of the optical comb. This scheme of wavelength synthesizing allows the measurement of absolute distances with a high precision that is traceable to the definition of time. The achievable wavelength uncertainty is $1.9{\times}10^{-10}$, which allows the absolute heights of gauge blocks to be determined with an overall calibration uncertainty of 15 nm (k = 1). These results demonstrate a successful industrial application of an optical frequency synthesis employing a femtosecond laser, a technique that offers many possibilities for performing precision length metrology that is traceable to the well-defined international definition of time.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권5호
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• pp.675-681
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• 2016

A 41dB gain control range $6^{th}$-order band-pass receiver front-end (RFE) using CMOS switched frequency translated impedance (FTI) is presented in a 40 nm CMOS technology. The RFE consists of a frequency tunable RF band-pass filter (BPF), IQ gm cells, and IQ TIAs. The RF BPF has wide gain control range preserving constant filter Q and pass band flatness due to proposed pre-distortion scheme. Also, the RF filter using CMOS switches in FTI blocks shows low clock leakage to signal nodes, and results in low common mode noise and stable operation. The baseband IQ signals are generated by combining baseband Gm cells which receives 8-phase signal outputs down-converted at last stage of FTIs in the RF BPF. The measured results of the RFE show 36.4 dB gain and 6.3 dB NF at maximum gain mode. The pass-band IIP3 and out-band IIP3@20 MHz offset are -10 dBm and +12.6 dBm at maximum gain mode, and +14 dBm and +20.5 dBm at minimum gain mode, respectively. With a 1.2 V power supply, the current consumption of the overall RFE is 40 mA at 500 MHz carrier frequency.