• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.581-588
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• 2013

This paper presents a study of the process temperature dependence of $Al_2O_3$ film grown by thermal atomic layer deposition (ALD) as a passivation layer in the crystalline Si (c-Si) solar cells. The deposition rate of $Al_2O_3$ film maintained almost the same until $250^{\circ}C$, but decreased from $300^{\circ}C$. $Al_2O_3$ film deposited at $250^{\circ}C$ was found to have the highest negative fixed oxide charge density ($Q_f$) due to its O-rich condition and low hydroxyl group (-OH) density. After post-metallization annealing (PMA), $Al_2O_3$ film deposited at $250^{\circ}C$ had the lowest slow and fast interface trap density. Actually, $Al_2O_3$ film deposited at $250^{\circ}C$ showed the best passivation effects, that is, the highest excess carrier lifetime (${\tau}_{PCD}$) and lowest surface recombination velocity ($S_{eff}$) than other conditions. Therefore, $Al_2O_3$ film deposited at $250^{\circ}C$ exhibited excellent chemical and field-effect passivation properties for p-type c-Si solar cells.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.6
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• pp.847-853
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• 2016

Applications of Si have been increasingly exploited and extended to More-Moore, More-than-Moore, and beyond-CMOS approaches. Ge is regarded as one of the supplements for Si owing to its higher carrier mobilities and peculiar band structure, facilitating both advanced and optical applications. As an emerging metal-oxide device, the junctionless field-effect transistor (JLFET) has drawn considerable attention because of its simple process, less performance fluctuation, and stronger immunity against short-channel effects due to the absence of anisotype junctions. In this study, we investigated lateral field scalability, which is equivalent to channel-length scaling, in Si and Ge JLFETs. Through this, we can determine the usability of Si CMOS and hypothesize its replacement by Ge. For simulations with high accuracy, we performed rigorous modeling for ${\mu}_n$ and ${\mu}_p$ of Ge, which has seldom been reported. Although Ge has much higher ${\mu}_n$ and ${\mu}_p$ than Si, its saturation velocity ($v_{sat}$) is a more determining factor for maximum $I_{on}$. Thus, there is still room for pushing More-Moore technology because Si and Ge have a slight difference in $v_{sat}$. We compared both p- and n-type JLFETs in terms of $I_{on}$, $I_{off}$, $I_{on}/I_{off}$, and swing with the same channel doping and channel length/thickness. $I_{on}/I_{off}$ is inherently low for Ge but is invariant with $V_{DS}$. It is estimated that More-Moore approach can be further driven if Si is mounted on a JLFET until Ge has a strong possibility to replace Si for both p- and n-type devices for ultra-low-power applications.

• KSBB Journal
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• v.5 no.3
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• pp.241-246
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• 1990

ATP analogs were immobilized or bovine caseins by the action of transglutaminase. The ATP analogs immobilized on the caseins were enzymatically active and interconverten by kinases. The immobilized ATP was dephosphorylated to the corresponding ADP by hexokinase and rephosphorylated to the ATP in solid form by acetate kinase. Under the conditions chosen, about 55% of the immobilized ATP was dephosphorylated and about 80% of the resulted ADP was rephosphorylated. Bovine $\beta$-casein was more useful than $\alpha$sf-casein as a carrier and C8-substituted ATP analognwas more effective than N6-substituted one in immobilization. Michaelis constant of C8-substituted ATP analog immobilized on $\beta$-casein was similar to that of free form of ATP and that of ATP analog. The immobilized ATP was much more stable than free ATP and its analog, while maximum velocity was reduced to 37% of the free ATP analog. The immobilized ATP was recovered almost completely by calcium precipitation.

• KSBB Journal
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• v.4 no.3
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• pp.229-234
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• 1989

NAD+ analogs, 8-( 6-aminohexyl) aminonicotinamide adenine dinucleotide and N6-[(6- aminohewl)-carbamoylmethyl]- NAD+, were imobilized on bovine caseins by the action of hansglutaminase. It appears that NAD+ analogs bind with $\alpha$S1-and $\beta$-caseins through formation of the r-glutamylamine bond between the amino groups attached to the hexyl chains in NAD+ analogs and the glutaminyl residues in caseins. The NAD+ analogs immobilized on the caseins were enzymatically reducible by alcohol dehydrogenase. $\beta$-Casein was more useful carrier than the $\alpha$S1-casein and 8-substituted NAD+ analog was more effective than N6-substituted one in immobilization. Michaelis constant of 8-substituted NAD+ analog immobilized on $\beta$-casein in alcohol dehydrogenase reaction was similar to that of free from of NAD+ and that of NAD+ analog. Immobilized NAD+ was much more stable at alkaline pH than free NAD+ and its analog while maximum velocity was reduced to 31% of the free NAD+ analog. The coenzyme casein conjugated was recovered almost completely in casein precipitated by calcium.

• Korean Journal of Digital Imaging in Medicine
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• v.8 no.1
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• pp.51-55
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• 2006

The effects of Asaddition in amorphous selenium(a-Se) films for digital X-ray conversion material have been studied using the moving photocarrier grating(MPG) technique. This method utilizes the moving interference pattern generated by the superposition of the two frequency shifted laser beams for the illumination of the sample. This moving intensity grating induces a short circuit current, j$_{sc}$ in a-Se:As film. The transport parameters of the sample are extracted from the grating-velocity dependent short circuit current induced in the sample along the modulation direction. The electron and hole mobility, and recombination lifetime of a-Se films with arsenic(As) additions have been obtained. We have found an Increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density. The transport properties for As doped a-Se films obtained by using MPG technique have been compared with X-ray sensitivity for a-Se:As device. The fabricated a-Se(0.3% As) device film exhibited the highest X-ray sensitivity out of 5 samples.

• Applied Chemistry for Engineering
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• v.18 no.1
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• pp.94-97
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• 2007

Carbon nanotubes and nanowires were prepared by methane pyrolysis over Pd(5)/SPK catalyst by changing oxygen molar ratio in a fixed bed flow reactor under atmospheric condition and also analyzed by SEM and TEM. When the $CH_4/O_2$ molar ratio was 1, carbons were not almost deposited on the catalyst bed support, but when it was 2, carbons were deposited as much as plugging reactor. TEM and SEM images for the deposited carbons showed a number of single-walled carbon nanotubes and carbon nanowires. The growth mechanism of carbon nanotubes produced on the catalyst surface was the tip growth mode. It should be played an important role in carbon nanotubes and nanowires produced on the catalyst bed support to formate the carbon growth velocity vectors and nuclei of ring structure of carbon nanowires. SPK carrier was $N_2$ isotherm of IV type with mesopores, and excellent in the thermal stability.

• Journal of the Society of Naval Architects of Korea
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• v.51 no.2
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• pp.171-177
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• 2014

A two-dimensional particle image velocimetry (2D PIV) system in a towing tank is employed to measure a wake field of a very large crude oil carrier model with rotating propeller in self propulsion condition, to identify characteristics of wake of a propeller working behind a ship. Phase-averaged and time-averaged flow fields are measured for a horizontal plane. Scale ratio of the model ship is 1/100 and Froude number is 0.142. By phase-averaging technique, trajectories of tip vortex and hub vortex are identified and characteristic secondary vortex distribution is observed in the hub vortex region. Propeller wake on the starboard side is more accelerated than that on the port side, due to the difference of inflow of propeller blades. The hub vortex trajectory tends to face the port side. With the fluctuation part of the phase-averaged velocity field, turbulent kinetic energy (TKE) is also derived. In the center of tip vortex and hub vortex region, high TKE concentration is observed. In addition, a time-averaged vector field is also measured and compared with phase-averaged vector field.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.151-151
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• 2008

갈륨-질화물(GaN) 기반의 고속전자이동도 트랜지스터(high electron mobility transistor, HEMT)는 마이크로파 또는 밀리미터파 등과 같은 고주파 대역의 통신시스템에 널리 사용되는 전자소자로 각광받고 있다. GaN HEMT는 AlGaN/GaN 또는 AlGaN/InGaN/GaN 등과 같은 이종접합구조(heterostructure)로부터 발생하는 이차원 전자가스(two-dimensional electron gas, 2DEG) 채널을 이용하여 캐리어 구속효과(carrier confinement) 및 이동도의 향상이 가능하다. 또한 높은 2DEG 채널의 면밀도(sheet concentration) 와 전자의 포화 속도(saturation velocity)를 바탕으로 고출력 동작이 가능하여 차세대 이동통신용 전력 증폭기로 주목받고 있다. 그러나 이론적으로 우수한 특성과 달리, 실제 소자에서는 epi 성장시의 결함이나 전위, 표면 상태에 따른 2DEG 감소 등의 영향으로 이론보다 높은 누설 전류와 낮은 항복 전압 특성을 가진다. 특히, 기존의 GaN HEMT 구조에서는 Drain-Side Gate Edge에서의 전계 집중이 항복 전압 특성에 미치는 영향이 크다. 본 논문에서는 이러한 문제를 해결하기 위해 Trapezoidal Gate구조를 이용하여 Drain 방향의 Gate Edge가 완만히 변하는 구조를 제안하였다. 이를 위해 $ATLAS^{TM}$ 전산모사 프로그램을 이용하여 Trapezoidal Gate 구조를 구현하여 형태에 따른 전류-전압 특성 및 소자의 스위칭 특성 및 Gate 아래 채널층에 형성되는 Electric Field의 분산을 조사하고, 이를 바탕으로 고속 동작 및 높은 항복 전압을 갖는 AlGaN/GaN HEMT의 최적화된 구조를 제안하였다. 새로운 구조의 Gate를 적용한 AlGaN/GaN HEMT는 Gate edge에서의 전계를 분산시켜 피크 값이 감소되는 것을 확인하였다.

• The Transactions of the Korean Institute of Power Electronics
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• v.20 no.5
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• pp.456-463
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• 2015

Nowadays, small quantity batch production, which is so-called a flexible manufacturing system, is a major trend in the modern factory automation industry. The demands for new transportation system are increased gradually, with which multiple passive carriers carrying materials and semi-products are precisely and individually controlled along a single closed rail. Thus, a new type of permanent magnet linear synchronous motor (PMLSM), which consists of state coils on a single rail and PM movers as many as carriers, is proposed in this paper. The rail can be segmented as modules with pairs of coils and a current amplifier, which makes the transportation system simple; therefore, the rail can be easily extended and repaired. A design method of the new PMLSM with a single carrier is proposed, which can be thought as a new version of PMLSM, a coil-segmented coreless PMLSM (CS-CLPMLSM). Experimental setup for it is made, and propulsion results show that with the help of a new effective coil selection and switching algorithms, the conventional current-based vector control is sufficient to fulfill the position and velocity control of the new PMLSM. The proposed PMLSM is expected to fulfill seamless servo-control of multiple carriers also in process line, such as a new generation of flat panel display manufacturing line.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.40-47
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• 2014

In this paper, $Al_2O_3$ film deposited by thermal atomic layer deposition (ALD) with diluted $NH_4OH$ instead of $H_2O$ was suggested for passivation layer and anti-reflection (AR) coating of the p-type crystalline Si (c-Si) solar cell application. It was confirmed that the deposition rate and refractive index of $Al_2O_3$ film was proportional to the $NH_4OH$ concentration. $Al_2O_3$ film deposited with 5 % $NH_4OH$ has the greatest negative fixed oxide charge density ($Q_f$), which can be explained by aluminum vacancies ($V_{Al}$) or oxygen interstitials ($O_i$) under O-rich condition. $Al_2O_3$ film deposited with $NH_4OH$ 5 % condition also shows lower interface trap density ($D_{it}$) distribution than those of other conditions. At $NH_4OH$ 5 % condition, moreover, $Al_2O_3$ film shows the highest excess carrier lifetime (${\tau}_{PCD}$) and the lowest surface recombination velocity ($S_{eff}$), which are linked with its passivation properties. The proposed $Al_2O_3$ film deposited with diluted $NH_4OH$ is very promising for passivation layer and AR coating of the p-type c-Si solar cell.