• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.446-446
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• 2011

One dimensional (1-D) structures of ZnO nanorods are promising elements for future optoelectronic devices. However there are still many obstacles in fabricating high-quality p-type ZnO up to now. In addition, it is limited to measure the degree of the doping concentration and carrier transport of the doped 1-D ZnO with conventional methods such as Hall measurement. Here we demonstrate the measurement of the electronic properties of p- and n-doped ZnO nanorods by the Kelvin probe force microscopy (KPFM). Vertically aligned ZnO nanorods with intrinsic n-doped, As-doped p-type, and p-n junction were grown by vapor phase epitaxy (VPE). Individual nanowires were then transferred onto Au films deposited on Si substrates. The morphology and surface potentials were measured simultaneously by the KPFM. The work function of the individual nanorods was estimated by comparing with that of gold film as a reference, and the doping concentration of each ZnO nanorods was deduced. Our KPFM results show that the average work function difference between the p-type and n-type regions of p-n junction ZnO nanorod is about ~85meV. This value is in good agreement with the difference in the work function between As-doped p- and n-type ZnO nanorods (96meV) measured with the same conditions. This value is smaller than the expected values estimated from the energy band diagram. However it is explained in terms of surface state and surface band bending.

• Polymer(Korea)
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• v.26 no.6
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• pp.785-791
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• 2002

The effect of the supercritical carbon dioxide (sc$CO_2$) on ion-conductive behaviors for polyether electrolytes based on, both poly (ethylene oxide) (PEO) and poly [oligo (oxyethylene glycol) methacrylate] (PMEO) with lithium triflate, LiCF$_3$SO$_3$, has been investigated. In particular, the present research is a new concept for improving the ionic conductivity of polyether electrolytes. The maximum ionic conductivity ($\sigma$$_{max}$) at room temperature of the PEO electrolyte was more than 100 times higher, and the $\sigma$$_{max}$ at 9$0^{\circ}C$ of the PMEO electrolyte was 30 times improved by the se$CO_2$ treatment, respectively. It was revealed that the penetration of $CO_2$ molecules into the polymer matrix causes the increase of carrier ions by ion-dispersion effect and the decrease of glass transition temperature (T$_{g}$) by plasticizing effect that results in the improvement of the ion transport behaviors.viors.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.208-208
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• 2013

Graphene has emerged as a fascinating material for next-generation nanoelectronics due to its outstanding electronic properties. In particular, graphene-based field effect transistors (GFETs) have been a promising research subject due to their superior response times, which are due to extremely high electron mobility at room temperature. The biggest challenges in GFET applications are control of carrier concentration and opening the bandgap of graphene. To overcome these problems, three approaches to doping graphene have been developed. Here we demonstrate the decoration of Ni nanoparticles (NPs) on graphene films by simple annealing for p-type doping of graphene. Ni NPs/graphene films were fabricated by coating a $NiCl2{\cdot}6H2O$ solution onto graphene followedby annealing. Scanning electron microscopy and atomic force microscopy revealed that high-density, uniformly sized Ni NPs were formed on the graphene films and the density of the Ni NPs increased gradually with increasing $NiCl2{\cdot}6H2O$ concentration. The formation of Ni NPs on graphene films was explained by heat-driven dechlorination and subsequent particlization, as investigated by X-ray photoelectron spectroscopy. The doping effect of Ni NPs onto graphene films was verified by Raman spectroscopy and electrical transport measurements.

• Journal of the Korea Society of Computer and Information
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• v.18 no.10
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• pp.225-234
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• 2013

The purpose of this study is to evaluate the impact of airline's retention equity on customer positive exclusive behavior intention and to minimize customer churn based maintenance is aimed to derive key variables in air transport market. A survey was conducted Incheon and Gimpo airport to use in the national carrier of domestic air travelers. A total of 480 respondents completed a survey. The result reveal that loyalty program, preferential treatment & acknowledgement program, and community program have significantly effect on positive behavior intention. However, preferential treatment & acknowledgement program, and community program have significantly effect on exclusive behavior intention. It showed that they are more influence than loyalty program as a switching barrier of airlines. The academic and practical implication of this study has been identified in the competitive market to maximize customer retention factors of maintaining retention equity to derive empirical strategic priorities.

• The Korean Journal of Physiology and Pharmacology
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• v.19 no.4
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• pp.319-325
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• 2015

Among solute carrier proteins, the organic anion transporters (OATs) play an important role for the elimination or reabsorption of endogenous and exogenous negatively charged anionic compounds. Among OATs, SLC22A9 (hOAT7) transports estrone sulfate with high affinity. The net decrease of estrogen, especially in post-menopausal women induces rapid bone loss. The present study was performed to search the SNP within exon regions of SLC22A9 in Korean females with osteoporosis. Fifty healthy controls and 50 osteoporosis patients were screened for the genetic polymorphism in the coding region of SLC22A9 using GC-clamped PCR and denaturing gradient gel electrophoresis (DGGE). Six SNPs were found on the SLC22A9 gene from Korean women with/without osteoporosis. The SNPs were located as follows: two SNPs in the osteoporosis group (A645G and T1277C), three SNPs in the control group (G1449T, C1467T and C1487T) and one SNP in both the osteoporosis and control groups (G767A). The G767A, T1277C and C1487T SNPs result in an amino acid substitution, from synonymous vs nonsynonymous substitution arginine to glutamine (R256Q), phenylalanine to serine (F426S) and proline to leucine (P496L), respectively. The Km values and Vmax of the wild type, R256Q, P496L and F426S were 8.84, 8.87, 9.83 and $12.74{\mu}M$, and 1.97, 1.96, 2.06 and 1.55 pmol/oocyte/h, respectively. The present study demonstrates that the SLC22A9 variant F426S is causing inter-individual variation that is leading to the differences in transport of the steroid sulfate conjugate (estrone sulfate) and, therefore this could be used as a marker for certain disease including osteoporosis.

• Applied Biological Chemistry
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• v.16 no.1
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• pp.31-40
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• 1973

Azotobacter vinelandii cell extracts and its variety of purified fractions with regard to their ability to form the redox state of the Shethna Flavoprotein (free radical form FPH.) were studied. A fluorescent flavoprotein (protein I) and a brown protein (protein II) were the most active proteins which were isolated in purified form. The free radical formation activity was substantially decreased during the purification and was completely lost upon storage in a week under nitrogen in a frozenstate. The presence of free flavin (FMN) with NADH enhanced the rate of free radical formation. The reaction of FMN and NADH was found to be catalysed by various cell fractions. A possible role of FMN as a substrate for free radical shethna flavoprotein was investigated. Slower reaction rate of $FMNH_2+Flavoprotein\;(FP){\to}FPH+FMN$ than $FMN+NADH{\to}FMNH_2$, accumulation of $FMNH_2$ ocurred which subsquently caused FPH.

• Journal of the Korea Institute of Military Science and Technology
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• v.20 no.4
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• pp.528-535
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• 2017

Fuel cells have been spotlighted in the world for being highly efficient and environmentally friendly. A hydrogen which is the fuel of fuel cell can be obtained from a number of sources. Hydrogen source for operating the polymer electrolyte membrane fuel cell(PEMFC) in the current underwater environment, such as a submarine and unmanned underwater vehicles are currently from the metal hydride cylinder. However, metal hydride has many limitations for using hydrogen carrier, such as large volume, long charging time, limited storage capacity. To solve these problems, we suggest diesel reformer for hydrogen supply source. Diesel fuel has many advantages, such as high hydrogen storage density, easy to transport and also well-infra structure. However, conventional diesel reforming system for PEMFC requires a large volume and complex CO removal system for lowering the CO level to less than 10 ppm. In addition, because the preferential oxidation(PROX) reaction is the strong exothermic reaction, cooling load is required. By changing this PROX reactor to hydrogen separation membrane, the problem from PROX reactor can be solved. This is because hydrogen separation membranes are small and permeable to pure hydrogen. In this study, we conducted the pressurized diesel reforming and water-gas shift reaction experiment for the hydrogen separation membrane application. Then, the hydrogen permeation experiments were performed using a Pd alloy membrane for the reformate gas.

• Transactions on Electrical and Electronic Materials
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• v.4 no.6
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• pp.9-12
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• 2003

The electrical properties of stabilized amorphous selenium typical of the material used in direct conversion x-ray imaging devices are reported. Carrier mobility was measured using time-of-flight (TOF) measurements to investigate the transport properties of holes and electrons in stabilized a-Se film. A laser beam with pulse duration of 5 ns and wavelength of 350nm was illuminated on the surface of a-Se with thickness of 400 $\mu\textrm{m}$. The photo induced signals of a-Se film as a function of time were measured. The measured transit times of hole and electron were about 8.73${\mu}\textrm{s}$ and 229.17${\mu}\textrm{s}$, respectively. The hole and electron drift mobilities decreases with increase of electric field up to 4V/$\mu\textrm{m}$. Above 4V/$\mu\textrm{m}$, the measured drift mobilities exhibited no observable dependence with respect to electric field. The experimental results showed that the hole and electron drifting mobility were 0.04584 $\textrm{cm}^2$ V$\^$-1/s$\^$-1/ sand 0.00174 $\textrm{cm}^2$V$\^$-1/s$\^$-1/ at 10 V/$\mu\textrm{m}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.141-141
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• 2010

The effect of thermal anneal on the characteristics of structural properties and the enhancement of luminescence and photovoltaic (PV) characteristics of silicon-rich silicon-nitride films were investigated. By using an ultra high vacuum ion beam sputtering deposition, B-doped silicon-rich silicon-nitride (SRSN) thin films, with excess silicon content of 15 at. %, on P-doped (n-type) Si substrate was fabricated, sputtering a highly B doped Si wafer with a BN chip by N plasma. In order to examine the influence of thermal anneal, films were then annealed at different temperature up to $1100^{\circ}C$ under $N_2$ environment. Raman, X-ray diffraction, and X-ray photoemission spectroscopy did not show any reliable evidence of amorphous or crystalline Si clusters allowing us concluding that nearly no Si nano-cluster could be formed through the precipitation of excess Si from SRSN matrix during thermal anneal. Instead, results of Fourier transform infrared and X-ray photoemission spectroscopy clearly indicated that defective, amorphous Si-N matrix of films was changed to be well-ordered thanks to high temperature anneal. The measurement of spectral ellipsometry in UV-visible range was carried out and we found that the optical absorption edge of film was shifted to higher energy as the anneal temperature increased as the results of thermal anneal induced formation of $Si_3N_4$-like matrix. These are consistent with the observation that higher visible photoluminescence, which is likely due to the presence of Si-N bonds, from anneals at higher temperature. Based on these films, PV cells were fabricated by the formation of front/back metal electrodes. For all cells, typical I-V characteristic of p-n diode junction was observed. We also tried to measure PV properties using a solar-simulator and confirmed successful operation of PV devices. Carrier transport mechanism depending on anneal temperature and the implication of PV cells based on SRSN films were also discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.240.2-240.2
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• 2013

The device scale of flash memory was confronted with quantum mechanical limitation. The next generation memory device will be required a break-through for the device scaling problem. Especially, graphene is one of important materials to overcome scaling and operation problem for the memory device, because ofthe high carrier mobility, the mechanicalflexibility, the one atomic layer thick and versatile chemistry. We demonstrate the hybrid memory consisted with the metal-oxide quantum dots and the mono-layered graphene which was transferred to $SiO_2$ (5 nm)/Si substrate. The 5-nm thick secondary $SiO_2$ layer was deposited on the mono-layered graphene by using ultra-high vacuum sputtering system which base pressure is about $1{\times}10^{-10}$ Torr. The $In_2O_3$ quantum dots were distributed on the secondary $SiO_2$2 layer after chemical reaction between deposited In layer and polyamic acid layer through soft baking at $125^{\circ}C$ for 30 min and curing process at $400^{\circ}C$ for 1 hr by using the furnace in $N_2$ ambient. The memory devices with the $In_2O_3$ quantum dots on graphene monolayer between $SiO_2$ thin films have demonstrated and evaluated for the application of next generation nonvolatile memory device. We will discuss the electrical properties to understating memory effect related with quantum mechanical transport between the $In_2O_3$ quantum dots and the Fermi level of graphene layer.