Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2013.02a
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- Pages.208-208
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- 2013
P-Type Doping of Graphene Films by Hybridization with Nickel Nanoparticles
- Lee, Su Il (BK21 Physics Research Division, Sungkyunkwan University) ;
- Song, Wooseok (BK21 Physics Research Division, Sungkyunkwan University) ;
- Kim, Yooseok (BK21 Physics Research Division, Sungkyunkwan University) ;
- song, Inkyung (BK21 Physics Research Division, Sungkyunkwan University) ;
- Park, Sangeun (BK21 Physics Research Division, Sungkyunkwan University) ;
- Cha, Myung-Jun (BK21 Physics Research Division, Sungkyunkwan University) ;
- Jung, Dae Sung (Department of Energy Science, Sungkyunkwan University) ;
- Jung, Min Wook (Thin Film Materials Research Group, Research Institute of Chemical Technology (KRICT)) ;
- An, Ki-Seok (Thin Film Materials Research Group, Research Institute of Chemical Technology (KRICT)) ;
- Park, Chong-Yun (BK21 Physics Research Division, Sungkyunkwan University)
- Published : 2013.02.18
Abstract
Graphene has emerged as a fascinating material for next-generation nanoelectronics due to its outstanding electronic properties. In particular, graphene-based field effect transistors (GFETs) have been a promising research subject due to their superior response times, which are due to extremely high electron mobility at room temperature. The biggest challenges in GFET applications are control of carrier concentration and opening the bandgap of graphene. To overcome these problems, three approaches to doping graphene have been developed. Here we demonstrate the decoration of Ni nanoparticles (NPs) on graphene films by simple annealing for p-type doping of graphene. Ni NPs/graphene films were fabricated by coating a