• Proceedings of the KIPE Conference
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• 2005.07a
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• pp.298-301
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• 2005

The flying capacitor voltage control of the flying capacitor multi-level inverter (FCMLI) is very important for safe operation. The voltage unbalancing of flying capacitors caused serious problems in safety and reliability of system. In the FCMLI, balancing problem of the flying capacitor has its applications limited. The voltage unbalance is occurred by the difference of each capacitors charging and discharging time applied to FCMLI. This paper investigates and analyzes multi-carrier PWM methods to solve capacitor voltage balancing problem. The Phase-Shift PWM (PSPWM) method that is commonly used, The Modified Carrier-Redistribution PWM (MCRPWM) method and The Saw-Tooth-Rotation PWM (STRPWM) method are discussed and compared with respect to switching state, balancing voltage of capacitors and output waveform. These three PWM methods are analyzed by using a flying capacitor three-level inverter and provided result through simulation. Finally, the harmonics about the output voltages of their methods are compared using the harmonic distortion factor (HDF).

• Proceedings of the Membrane Society of Korea Conference
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• 1999.07a
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• pp.15-18
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• 1999

A simple mathematical model for facilitated mass transport through a fixed site carrier membrane was derived by assuming an instantaneous, microscopic concentration (activity) fluctuation. The current model demonstrates that the facilitation factor depends on the extent of concentration fluctuation, the time scale ratios of diffusion to chemical reaction and the ratio of the carrier concentration to the solute solubility in matrix. The model was examined against the experimental data on oxygen transport in membranes containing metallo-porphyrin carriers, and the agreement was exceptional (within 10% error). The basic concept of this approach was applied to separate olefin from olefin/paraffin mixtures. A proprietaty carrier, developed here, resulted that the selectivity of propylene over propane was more than 120 and the propylene permeance exceed 40 gpu.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.4
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• pp.621-629
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• 2001

In this thesis a wireless data transmission system has been proposed and analysed that uses the multi-carrier technique with the adaptive modulation scheme. In general, the OFDM(Orthogonal Frequency Division Multiplexing) system is assigning a same amount of information to all sub-carriers in a wireless data transmission. In the proposed system, the different amount of information is assigned to each sub-carrier depending on the state of channel and the target probability of error of system. With the proposed scheme, the transmission rate can be maximized with the fixed power and the required power to transmit the information can be minimized with the target probability of error of system.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.240.1-240.1
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• 2013

본 연구에서는 Symmetric NMOSFET의 channel length에 따른 전기적 특성 분석에 관한 연구를 진행하였다. 특성 분석에 사용된 소자의 Gate oxide 두께는 6 nm 이며, 채널 Width/Length는 각각 10/10 ${\mu}m$, 10/0.2 ${\mu}m$ 이다. Drain Avalanche Hot Carrier(DAHC) 테스트를 진행하기 위하여 각각 스트레스 조건을 추출하였고, 조건에 해당되는 스트레스를 1700초 동안 인가하였다. 스트레스 후, Channel length가 10 ${\mu}m$과 0.2 ${\mu}m$인 두 소자의 특성을 측정, 분석결과 10 ${\mu}m$의 소자의 경우 문턱전압(VT)과 Subthreshold swing (SS)의 변화가 없었지만 0.2 ${\mu}m$의 소자의 경우 0.42V의 (from 0.67V to 1.09V) 문턱전압 변화 (VTH)와 71 mV/dec (from 79 mV/dec to 150 mV/dec))의 Swing (SS)변화를 보여 스트레스 후에 Interface trap이 증가하였음을 알 수 있다. off-state leakage current를 측정 결과 0.2 ${\mu}m$ 의 경우 leakage current의 양이 증가하였음을 알 수 있고 이는 드레인 부근에 증가된 interface trap에 의한 현상으로 판단된다. 상기 결과와 같이 DAHC 스트레스에 의한 소자의 열화 현상은 Channel length가 짧을수록 더 크게 의존하는 것을 확인하였다.

• Macromolecular Research
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• v.17 no.11
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• pp.894-900
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• 2009

This study examined the charge carrier photogeneration and hole transport properties of blends of poly (9-vinylcarbazole) (PVK), $\pi$-conjugated polymer, with different weight proportions (0~29.4 wt%) of (PEA)$VOPO_4{\cdot}H_2O$ (PEA: phenethylammonium cation), a novel organic-inorganic hybrid material, using IR, UV-Vis, and energy dispersive spectroscopy (EDS), thermogravimetric analysis (TGA), steady state photocurrent (SSPC) measurement, and atomic force microscopy (AFM). The SSPC measurements showed that the photocurrent of PVK was reduced by approximately three orders of magnitude by the incorporation of a small amount (~12.5 wt%) of (PEA) $VOPO_4{\cdot}H_2O$, suggesting that hole transport occurred through the PVK carbazole groups, whereas a reverse trend was observed at high proportions (>12.5 wt%) of (PEA)$VOPO_4{\cdot}H_2O$, suggesting that transport occurred via (PEA)$VOPO_4{\cdot}H_2O$ molecules. The transition to a trap-controlled hopping mechanism was explained by the difference in ionization potential and electron affinity of the two compounds as well as the formation of charge percolation threshold pathways.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1953-1955
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• 1999

The effects of the local lifetime control on the characteristics of IGBT are investigated using the 2-dimensional device simulator, MEDICI. Many lumped resistive turn-off simulations are carried out to analyze the effects of the minority carrier lifetime, the width, and the position of the region with a reduced local minority carrier lifetime. As a result of these simulations, it is concluded that the on state voltage drop$(V_{CE,SAT})$ is only slightly increased while the switching behavior is greatly improved if the low lifetime region is properly set. And these results are compared with IGBTs having uniform lifetime.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.46.1-46.1
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• 2010

Surface passivation of crystalline silicon(c-Si) surface with a-Si:H thin films has been investigated by using quasi-steady-state photo conductance(QSSPC) measurements. Analyzing the influence of a-Si:H film thickness, process gas ratio, deposition temperature and post annealing temperature on the passivation properties of c-Si, we optimized the passivation conditions at the substrate temperature of $200-250^{\circ}C$. Best surface passivation has been obtained by post-deposition annealing of a-Si:H film layer. Post annealing around the deposition temperature was sufficient to improve the surface passivation for silicon substrates. We obtained effective carrier lifetimes above 5.5 ms on average.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.35 no.10
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• pp.465-472
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• 1986

The present study was carried out to investigate the mechanism which control the voltage instability and the breakdown of CVD Al2O3 on Si substrates. Our sample were metal-Al2O3-Oi Capacitors with both Al and Au field plates. Electron injection and trapping, with resultant positive flatband voltage shift, occur at fields as low as 1-2[MV/cm.] We developed an approximate method for computing the location of the centroid of the trapped electrons. Our results indicate that the electrons are trapped near the injecting interface, at least for fields less than about 5[MV/cm ] Because of continued charging, a true steady state is probably never reached, and the only unique I-V curve is the one obtained initially, when the traps are empty. We measured this I-V curve for both polarities of applied voltage, using a fresh sample for each point. The observed current densities are much larger than those obtained in thermally grawn SiO2.

• Macromolecular Research
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• v.12 no.2
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• pp.145-155
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• 2004

Facilitated transport membranes for the separation of olefin/paraffin mixtures have long been of interest in separation membrane science because olefins, such as propylene and ethylene, which are important chemicals in petrochemical industries, are currently separated by energy-intensive cryogenic distillation processes. Recently, solid polymer electrolyte membranes containing silver ions have demonstrated remarkable performance in the separation of olefin/paraffin mixtures in the solid state and, thus, they can be considered as alternatives to cryogenic distillation. Here, we review recent progress, and critical issues affecting in the use of facilitated olefin transport membranes; in particular, we provide a general overview with reference to carrier properties, transport mechanisms, and separation performance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.1
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• pp.23-28
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• 2008

In this paper, transient characteristics of the Punch Through Insulated Gate Bipolar Transistor (PT-IGBT) have been studied. On the contrary to Non-Punch Through Insulated Gate Bipolar Transistor(NPT-IGBT), it has a buffer layer and reduces switching power loss. It has a simple drive circuit controlled by the gate voltage of the MOSFET and low on-state resistance of the bipolar junction transistor. The transient characteristics of the PT-IGBT have been analyzed analytically. Excess minority carrier and charge distribution in active base region, the rate of anode voltage with time are expressed analytically by adding the influence of buffer layer. The experimental data is obtained from manufacturer. The theoretical predictions of the analysis have been compared with the experimental data obtained from the measurement of a device(600 V, 15 A) and show good agreement.