Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Effects of the Local Lifetime Control on the Switching and Latch-up Characteristics of IGBT

Local Lifetime Control이 TGBT의 스위칭 및 래치업 특성에 미치는 영향

  • Lee, Se-Kyu (School of Electronic Engineering, Ajou University) ;
  • Chung, Sang-Koo (School of Electronic Engineering, Ajou University)
  • Published : 1999.07.19
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Abstract

The effects of the local lifetime control on the characteristics of IGBT are investigated using the 2-dimensional device simulator, MEDICI. Many lumped resistive turn-off simulations are carried out to analyze the effects of the minority carrier lifetime, the width, and the position of the region with a reduced local minority carrier lifetime. As a result of these simulations, it is concluded that the on state voltage drop$(V_{CE,SAT})$ is only slightly increased while the switching behavior is greatly improved if the low lifetime region is properly set. And these results are compared with IGBTs having uniform lifetime.

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