• 반도체디스플레이기술학회지
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• 제12권2호
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• pp.63-66
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• 2013

Carbon Nanotube have been proposed for use in various applications for electromechanical systems. Nano-electromechanical resonators which provide high frequency resolution and long energy storage time, play an important role in wide area fields of science and engineering. Using the control of tension in carbon nanotube, can be made the tunable resonator. In the study, we analysis the tunable frequency change of resonator by tension changes due to the rotation angles of the single-walled carbon nanotube resonator. The frequency characteristics of a resonator as a function of the rotation angle. The tension was found to decrease with increasing rotation angle, and therefore the resonance frequencies could be changed by controlling the single-walled carbon nanotube rotation angle. The resonance frequencies decreased with increasing angle, and when the rotation angle was greater than $60^{\circ}$, these changes were marked.

• Journal of Electrical Engineering and Technology
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• 제6권2호
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• pp.233-238
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• 2011

In the present work, a new approach is proposed for via interconnects of semiconductor devices, where multi-wall carbon nanotubes (MWCNTs) are used instead of conventional metals. In order to implement a selective growth of carbon nanotubes (CNTs) for via interconnect, the buried catalyst method is selected which is the most compatible with semiconductor processes. The cobalt catalyst for CNT growth is pre-deposited before via hole patterning, and to achieve the via etch stop on the thin catalyst layer (ca. 3nm), a novel 2-step etch scheme is designed; the first step is a conventional oxide etch while the second step chemically etches the silicon nitride layer to lower the damage of the catalyst layer. The results show that the 2-step etch scheme is a feasible candidate for the realization of CNT interconnects in conventional semiconductor devices.

• KIEE International Transactions on Electrophysics and Applications
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• 제4C권1호
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• pp.1-4
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• 2004

This paper presents an investigation of the phase-resolved partial discharge (PD) pattern of PET (Poly Ethylene Telephthalate) films with carbon black particles. The phase-resolved PD pattern and statistical parameter from PET samples according to the number of included semiconductor particles were measured. The measurement system consisted of a conventional PD detector using a digital signal processing technique. The partial discharge patterns of the PET films that include the semiconductor particles were investigated to simulate an actual situation that may exist in the cable. In addition, difference of PD patterns between semiconducting particles in PET films and artificial voids was studied. The relationship between the numbers of semiconductor particles in PET films was discussed through the difference of Ψ-q-n distribution and statistical analysis.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.211-212
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• 2005

Semiconductor fabrication technique has been increasingly developed virtue of greater demands, and supplies and applied semiconductor components in respective processes under development for minuteness. Now semiconductor having a line-width of 75nm was commercialized, and it is possible to scale down to 25nm. Accordingly, to cover with limitations, alternatives are actively investigated. In this paper, we overview the trend and applications of carbon nano tube (CNT) and present the future and technology based on existed theories.

• Advances in nano research
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• 제3권1호
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• pp.1-11
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• 2015

Thin film ethanol sensors made from ${\alpha}-Fe_2O_3$ decorated with multiwall carbon nanotubes(MWCNTs) were manufactured by the electron beam deposition method. The morphology of the decorated ${\alpha}-Fe_2O_3$/MWCNTs (25:1 weight ratios) nanocomposite powder was investigated using the scanning electron microscopy and X-ray diffraction techniques. The thickness of thin films has been determined from ellipsometric measurements. The response of manufactured sensors was investigated at different temperatures of the sensor work body and concentration of gas vapors. Good response of prepared sensors to ethanol vapors already at work body temperature of $150^{\circ}C$ was shown.

• 센서학회지
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• 제28권6호
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• pp.360-365
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• 2019

A polyvinylidene fluoride (PVDF)-based film speaker is successfully fabricated with enhanced bass sound by incorporating buckled nanospring carbon nanotubes (NS-CNTs) as fillers. Various concentrations up to 1-7 wt% of uniformly dispersed buckled NS-CNTs are loaded to increase the beta (β)-phase fraction, crystallinity, and dielectric constant of the speaker, and this results in the bass part enhancement of about 19 dB full scale (dBFS) at 7 wt% filler loading of the piezoelectric film speaker.

• 반도체디스플레이기술학회지
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• 제12권3호
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• pp.19-22
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• 2013

The purpose of this study is to develop a system that can monitor the amounts of energy consumption during CVD and etching process for semiconductor manufacturing. Specifically, this system is designed to measure the $CO_2$ emission amounts quantitatively by measuring the flow rate of gas used and amount of power consumed during the processes. The processes of CVD equipment can be classified generally into processing step and cleaning step and all the two steps were monitored. In CVD and etcher equipments, various gases including Ar and $O_2$ are used, but Ar, $O_2$ and He were monitored with the use of the LCI data of Korea Environmental Industry & Technology Institute and carbon emission coefficients of EcoInvent. As a result, it was found that the carbon emission amounts of CVD equipment for Ar, $O_2$ and He were $0.030kgCO_2/min$, $4.580{\times}10^{-3}kgCO_2/min$ and $6.817{\times}10^{-4}kgCO_2/min$, respectively and those of etcher equipment for Ar and $O_2$ are $5.111{\times}10^{-3}kgCO_2/min$ and $7.172kgCO_2/min$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.666-670
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• 2004

VLSI 소자에서 design rule(D/R)이 작아져 각 단위 Pattern의 size가 작아짐에 따라 aspect ratio가 커지게 되었다. 산화막 contact etch를 하는데 있어 산화막 측벽을 보호하는데, 이러한 보호막은 주로 fluoro-carbon 계열의 polymer precursor들이 사용된다. Aspect ratio(A/R)가 5 이하일 때에는 측벽의 보호막에 의한 바닥 변형이 문제가 되지 않으나, 10 이상의 A/R를 가진 contact에서는 크기가 줄고, 모양이 불균형하게 변하는 바닥 변형을 쉴게 관찰할 수 있다. 이러한 바닥 변형이 커지면 contact 저항이 높아지는 것은 물론이고, 심하게는 하부 pattern과 overlap 불량을 유발할 수 있다. 본 논문에서는 바닥변형을 일으키는 원인을 분석하고 fluoro-carbon 계열의 polymer precursor의 종류$(C_4_F6\;vs.\;C_3F_8)$에 따른 polymer증착 상태 확인 및 pattern비대칭에 따른 바닥 변형의 고찰과 plasma etching 시 H/W 변형을 통해 바닥 변형이 거의 없는 조건을 찾아낼 수 있었다.

• 한국전기전자재료학회논문지
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• 제36권2호
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• pp.99-108
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• 2023

Currently, semiconductor manufacturing industry heavily relies on a wide range of high global warming potential (GWP) gases, particularly during etching and cleaning processes, and their use and relevant carbon emissions are subject to global rules and regulations for achieving carbon neutrality by 2050. To replace high GWP gases in near future, dry etching using alternative low GWP gases is thus being under intense investigations. In this review, we report a current status and recent progress of the relevant research activities on dry etching processes using a low GWP gas. First, we review the concept of GWP itself and then introduce the difference between high and low GWP gases. Although most of the studies have concentrated on potentially replaceable additive gases such as C₄F₈, an ultimate solution with a lower GWP for main etching gases including CF₄ should be developed; therefore, we provide our own perspective in this regard. Finally, we summarize the advanced dry etch process research with low GWP gases and list up several issues to be considered in future research.

• 반도체디스플레이기술학회지
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• 제4권3호
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• pp.11-15
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• 2005

This paper shows that carbon nanotubes can be applied to a nanopipette. Nano space in atomic force microscope multi wall carbon nanotube tips is filled with molecules and atoms with charges and then, the tips can be applied to nanopipette when the encapsulated media flow off under applying electrostatic farces. Since the nano space inside the tips can be refilled, the tips can be permanently used in ideal conditions of no chemical reaction and no mechanical deformation. Molecular dynamics simulations for nanopipette applications demonstrated the possibility of nano-lithography or single-metallofullerene-transistor array fabrication.