• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.1
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• pp.38-44
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• 2005

Pyrolyzed polyimide is explored in terms of MEMS material. This paper describes chemical, electrical, mechanical properties of pyrolyzed polyimide (PIX-1400) thin film as MEMS material. When polyimide thin film was pyrolyzed at $800^{\circ}C$ for 60 minutes in $N_{2}$ ambient, the residual ratio of pyrolyzed film thickness measured with a surface profiler is about 49 %, and the resistivity is about $2.17{\times}10^{-2}\;{Omega}cm$. From the result of the load-deflection test, the estimated Young's modulus and initial average stress of pyrolyzed polyimide are 67 GPa and 30 MPa, respectively. As one demonstration of MEMS structures of pyrolyzed polyimide, the fabrication method of the microbridge structure is proposed for a micro heater and a resonator.

• Journal of environmental and Sanitary engineering
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• v.15 no.2
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• pp.41-48
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• 2000

In this study, we have investigated the effect of the various operating conditions on the removal fluorine in the rinsed water for the semiconductor industry by using electrolysis process. The removal efficiency of fluorine was irrelevant to initial pH, and carbon anode was high-level treatment in the effect of various electrodes. Fluorine included in the wastewater is treated by the addition of a Ca(OH)2, removal efficiency of electrolysis was increased about 40%. Besides the removal efficiency of fluorine was increased as the current density was increased and this treatment system could reduce both the total sludge and running costs. The feasibility of the electrochemical treatment to the fluorine containing wastewater was verified from this study.

• Journal of the Korean Vacuum Society
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• v.5 no.2
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• pp.169-174
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• 1996

The applications of the high density plasma sources to the etching in semiconductor fabrication process are actively studied because of the more strict requirement from the dry etching process due to shrinking down of the critical dimension. But in the oxide etching with the high density plasma sources, abundant fluorine atoms released from the flurocarbon feed gas make it difficult to get the highly selective $SiO_2/Si$ etching. In this study, to improve the $SiO_2/Si$ etch selectivity through the control of the radical loss channels, we propose the wall heating , one of methods of controlling loss mechanisms. With appearance mass spectroscopy(AMS) and actinometric optical emission spectroscopy(OES), the increase of both radicals impinging on the substrate and existing in bulk plasma, and the decrease of the fluorine atom with wall temperature are observed. As a result, a 40% improvement of the selectivity was achieved for the carbon rich feed gas.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.349-352
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• 1989

Poling piezoelectric ceramic-polymer composites with 0-3connectivity is difficult because of the high dielectric constant of most of the ferroelectric filler materials, and the high resistivity of the polymer matrix. To aid in poling this type of composite, conductivity of the polymer phase can be controlled by adding small amount of a semiconductor phase such as germanium, carbon or silicon. In this study, flexible piezoelectric composites of $PbTiO_3$ powder and Eccogel polymer were developed using small amounts of a semiconducting phase. These composites were poled rapidly at low voltages, resulting in properties superior to composites prepared without a conductive phase. The effect of addition of various conductive phase with different volume percentage on the dielectric and piezoelectric properties of the composite are discussed here.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.3 no.3
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• pp.52-57
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• 2004

Many kinds of gases, such as erosion gas, dilution gas, and toxic gas have been used in manufacturing process of LCD at semiconductor. In order to increase accumulation rate of manufacturing process, high degree of purity in these gases and minimized metalllic dust are required. All wetted stainless steel surface must be 316L electro-polished with $0254{\mu}m$ in average. Based on the AES analysis, Cr/Fe 11 and $Cr_2O_3$ thickness $25{\AA}$ are measured Molybdenum and silicon contaminants which is characteristic of stainless steel and oxygen were found on the surface.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.591-592
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• 2006

We studied about the manufacture of the drain-source contacts for OTFTs(organic thin-film transistors) by using screen printing method. The conductive fillers used Ag and carbon black. The conductive contacts with $100{\mu}m$ of channel length were screen printed on a silicon dioxide gate dielectric layer and, the pentacene semiconductor was deposited via vacuum deposition. As a result of studying various conductive pastes, we could obtain the OTFTs which exhibited field-effect behavior over arrange of drain-source and gate voltages, similar to devices employing deposited Au contacts. By using screen-printing with conductive paste, the contacts are processed at low temperature, thereby facilitating their integration with heat sensitive substrates.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.6-6
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• 2011

Graphene, a monlayer of carbon atoms arrange to form a 2-dimensional honeycomb lattice, exhibits enormous fascinating properties, such as a linear energy dispersion relation, a wide-range optical absorption, high thermal conductivity, and mechanical flexibility [1]. Because the unique material properties of graphene allow it to be a promising building block for the next generation electronic and optoelectronic devices, sometimes graphene-based devices have refereed to be a strong candidate to overcome the intrinsic limitations of conventional semiconductor-based technology [2,3]. However, there are several fundamental or technological hurdles to be overcome in real applications of graphene in electronics and optoelectronics. In this tutorial we will present a short introduction to the basic materials properties and recent progress in applications of graphene and discuss future outlook of graphene-based electronic and optoelectronic devices.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.13 no.8
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• pp.796-802
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• 2001

The purpose of the present study is to examine the heat transfer characteristics of the U-shape heat pipe for the cooling of semiconductor in subway train. Perflouro-carbon(PFC) was used as working fluid. Temperature distribution on the surface and heat transfer coefficients were investigated according to the working fluid volume percent and heating rate. The results were as follows; Optimum volumetric percent of working fluid was from 80% to 90%, and hat transfer coefficients of evaporation and condensation were as follows, respectively. $\hbar_ie=0.37\times(\frac{P_i}{P_O})$l_c}^0.3$,$\hbar_ic-4.2(\frac{\kappa_l^3p_l^2gh_fg}{\mu_lq_c_l_c}^\frac{1}{3}

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.133-139
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• 2007

Future MEMS systems will be composed of larger varieties of devices with very different functionality such as electronics, mechanics, optics and bio-chemistry. Integration technology of heterogeneous devices must be developed. This article first deals with the current development trend of new fabrication technologies; those include self-assembling of parts over a large area, wafer-scale encapsulation by wafer-bonding, nano imprinting, and roll-to-roll printing. In the latter half of the article, the concept towards the heterogeneous integration of devices and functionality into micro/nano systems is described. The key idea is to combine the conventional top-down technologies and the novel bottom-up technologies for building nano systems. A simple example is the carbon nano tube interconnection that is grown in the via-hole of a VLSI chip. In the laboratory level, the position-specific self-assembly of nano parts on a DNA template was demonstrated through hybridization of probe DNA segments attached to the parts. Also, bio molecular motors were incorporated in a micro fluidic system and utilized as a nano actuator for transporting objects in the channel.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1051-1054
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• 2009

This paper investigates approaches for improving effective mobility of organic thin film transistors (OTFTs). We consider gate dielectric optimization, whereby we demonstrated >2x increase in mobility by using a silicon-rich silicon nitride ($SiN_x$) gate dielectric for polythiophene-based (PQT) OTFTs. We also engineer the dielectric-semiconductor ($SiN_x$-PQT) interface to attain a 27x increase in mobility (up to 0.22 $cm^2$/V-s) using an optimized combination of oxygen plasma and OTS SAM treatments. Augmentative material systems by combining 1-D nanomaterials (e.g., carbon nanotubes, zinc oxide nanowires) in an organic matrix for nanocomposite OTFTs provided a further boost in device performance.