• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.872-875
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• 2003

Carbon nitride($CN_x$) thin films were deposited on quartz substrates using reactive RF magnetron sputtering system at uarious deposition conditions and investigated dielectric characteristics. Samples for capacitance measurements were of the MIM(Metal-Insulator-Metal) type devices. Aluminum film electrodes were prepared by a vacuum thermal evaporation method before and after the deposition of carbon nitride films. Capacitances were measured by a FLUKE PM6306 RCL Meter at room temperature. Current-voltage(I-V) characteristics and resistivity were measured by a CATS CA-EDA semiconductor test and analyzer. The carbon nitride films showed ${\alpha}-C_3N_4$ and ${\beta}-C_3N_4$ etc. peaks through Raman and FTIR. Observed surface of film and side structure using SEM(Scanning Electron Microscope), and measured thickness of film by ${\alpha}-step$. We can find that the dielectric constant was the lowest value in 50% nitrogen ratio and the resistivity was the highest value in 70% nitrogen ratio.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.6
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• pp.709-714
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• 2018

This study researched the reasons for changing polarity in accordance with junction properties in an interface of semiconductors. The contact properties of semiconductors are related to the effect of the semiconductor's device. Therefore, it is an important factor for understanding the junction characteristics in the semiconductor to increase the efficiency of devices. For generation of various junction properties, carbon-doped silicon oxide (SiOC) was deposited with various argon (Ar) gas flow rates, and the characteristics of the SiOC was varied based on the polarity in accordance with the Ar gas flows. Tin-doped zinc oxide (ZTO) as the conductor was deposited on the SiOC as an insulator to research the conductivity. The properties of the SiOC were determined from the formation of a depletion layer by the ionization reaction with various Ar gas flow rates due to the plasma energy. Schottky contact was good in the condition of the depletion layer, with a high potential barrier between the silicon (Si) wafer and the SiOC. The rate of ionization reactions increased when increasing the Ar gas flow rate, and then the potential barrier of the depletion layer was also increased owing to deficient ions from electron-hole recombination at the junction. The dielectric properties of the depletion layer changed to the properties of an insulator, which is favorable for Schottky contact. When the ZTO was deposited on the SiOC with Schottky contact, the stability of the ZTO was improved by the ionic recombination at the interface between the SiOC and the ZTO. The conductivity of ZTO/SiOC was also increased on SiOC film with ideal Schottky contact, in spite of the decreasing charge carriers. It increases the demand on the Schottky contact to improve the thin semiconductor device, and this study confirmed a high-performance device owing to Schottky contact in a low current system. Finally, the amount of current increased in the device owing to ideal Schottky contact.

• Korean Chemical Engineering Research
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• v.62 no.3
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• pp.225-232
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• 2024

The reduction of CO₂ emissions in the energy production sector, which accounts for 86.8% of total greenhouse gas emissions, is important to achieve carbon-neutrality. At present, 60% of total power generation in South Korea is coal and natural gas. Replacing fossil fuel with renewable energy such as wind and solar has disadvantages of unstable energy supply and high costs. Therefore, this study was conducted through the co-firing of natural gas, ammonia and hydrogen utilizing the natural gas combined cycle process. The results demonstrated reduction in CO₂ emissions and 34%~238% of the power production compared to using only natural gas. Case studies on mass fractions of natural gas, ammonia and hydrogen indicated that power production and NO_x emissions were inversely proportional to the ammonia ratio and directly proportional to the hydrogen ratio. This study provides guidelines for the use of various fuel mixtures and economic analysis in co-firing power generation.

• Journal of the Semiconductor & Display Technology
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• v.9 no.1
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• pp.5-10
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• 2010

Among a variety of cleaning processes, the cryogenic carbon dioxide ($CO_2$) cleaning has merits because it is highly efficient in removing very fine particles, innoxious to humans and does not produce residuals after the cleaning, which enables us to extend its area of coverage in the semi-conductor fabrication society. However, the cryogenic carbon dioxide cleaning method has some technical research issues in aspect to particles' adhesion and removal. To resolve these issues, performing an analysis for the identification of particle adhesion mechanism is needed. In this study, a research was performed by a theoretical approach. To this end, we extended the G-T (Greenwood-Tripp) model by applying the JKR (Johnson-Kendall-Roberts) and Lennard-Jones potential theories and the statistical characteristics of rough surface to investigate and identify the contact, adhesion and deformation mechanisms of soft or hard particles on the rough substrate. The statistical characteristics of the rough surface were taken into account through the employment of the normal probability distribution function of the asperity peaks on the substrate surface. The effects of surface roughness on the pull-off force for these particles were examined and discussed.

• Journal of the Semiconductor & Display Technology
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• v.8 no.4
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• pp.65-69
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• 2009

Carbon nanotubes (CNTs) were coated with undoped zinc oxide (ZnO) or 5 wt% gallium-incorporated ZnO (GZO) using various deposition conditions. The CNTs were directly grown on conical-type tungsten substrates at $700^{\circ}C$ using inductively coupled plasma-chemical vapor deposition. The pulsed laser deposition technique was used to deposit the ZnO and GZO thin films with very low stress. Field-emission scanning electron microscopy and high-resolution transmission electron microscopy were used to monitor the variations in the morphology and microstructure of CNTs prior to and after ZnO or GZO coating. The formation of ZnO and GZO films on CNTs was confirmed using energy-dispersive x-ray spectroscopy. In comparison to the as-grown (uncoated) CNT emitter, the CNT emitter that was coated with a thin (10 nm) GZO film showed remarkably improved field emission characteristics, such as the emission current of $325\;{\mu}A$ at 1 kV and the threshold field of $1.96\;V/{\mu}m$ at $0.1\;{\mu}A$, and it also exhibited the highly stable operation of emission current up to 40 h.

• Journal of the Semiconductor & Display Technology
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• v.2 no.1
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• pp.1-5
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• 2003

Plasma generator based on non-self-sustained low-pressure arc discharge has been examined as a tool for deposition of highly-adhesive hydrogenated amorphous diamond-like carbon(DLC) films. Since the discharge is stable in wide range of gas pressures and currents, this plasma source makes possible to realize both plasma-immersion ion implantation(PIII) and plasma-immersion ion deposition(PIID) in a unified vacuum cycle. The plasma parameters were measured as functions of discharge current. Discharge and substrate bias voltage parameters have been determined for the PIII and PIID modes. For PIID it has been demonstrated that hard and well-adherent DLC coating are produced at 200-500 eV energies per deposited carbon atom. The growth rates of DLC films in this case are about 200-300 nm/h. It was also shown that short(∼60$\mu\textrm{s}$) high-voltage(> 1kV) substrate bias pulses are the most favorable for achieving high hardness and good adhesion of DLC, as well as for reducing of residual intrinsic stress are.

• Journal of the Semiconductor & Display Technology
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• v.10 no.2
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• pp.115-119
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• 2011

A tip-type carbon nanotube(CNT)-based field emitter was studied to consider it as electron source for micro-focused x-ray tube. The CNT was grown directly on a metal (tungsten) substrate by using an inductively coupled plasma-chemical vapor deposition (ICP-CVD) method. Prior to CNT growth, the metal substrate was etched to have various tip angles from $10^{\circ}$ to $180^{\circ}C$ (flat-type). The morphologies and microstructures of all the grown CNTs were analyzed via field-emission SEM. Furthermore, the effects of substrate tip-angles on the emission properties of CNT-based field emitters were characterized to estimate the maximum current density, the turn-on voltage, and the spatial distribution of electron beams. Prolonged long-term stability testing of the CNT emitters was also performed. All the experiment results obtained from this study indicated why a tip-type CNT emitter, compared with a flat-type CNT emitter, would be more desirable for a micro-focused x-ray system, in terms of the emission current level, the focused beam area, and the emission stability.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.31 no.10
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• pp.986-992
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• 2007

This paper presents the fabrication and characterization of carbon films pyrolyzed with various photoresists for bioMEMS applications. To verify the usefulness of pyrolyzed carbon films as an electrode material in an electrochemical biosensor developed by the authors, interactions between avidin and biotin on the pyrolyzed carbon film were studied via electrochemical impedance spectroscopy based on electrostatic interactions between avidin and negatively-charged ferricyanide. The pyrolyzed carbon films were characterized using a surface profiler, a precision semiconductor parameter analyzer, a nanoindentor, scanning electron microscopy, and atomic force microscopy. Amine conjugated biotin was immobilized on the electrode using EDC/NHS as crosslinkers after $O_2$ plasma treatment to enhance functional groups on the carbon electrode pyrolyzed at $1000^{\circ}C$ with AZ9260. The detection of avidin binding with different concentrations in a range of 0.75 nM to $7.5\;{\mu}M$ to the pyrolyzed carbon electrode modified with biotin was carried out by measuring the electrochemical impedance change. The results show that avidin binds to the biotin on the electrode not by non-specific interaction but by specific interaction, and that EIS successfully detects this binding event. Pyrolyzed carbon films are a promising material for miniaturization, integration, and low-cost fabrication in electrochemical biosensors.

• Bulletin of the Korean Chemical Society
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• v.34 no.12
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• pp.3755-3761
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• 2013

This study aims to assess the ecological risk of the hazardous air pollutants (HAPs) emitted in the semiconductor manufacturing processes in Korea by using Quantitative Structure Activity Relationship (QSAR, EPA, US, EPI $Suite^{TM}$ 4.1). Owing to the absence of environmental standards of hazardous air pollutants in the semiconductor manufacturing processes in Korea, 18 HAPs in the semiconductor field included in both the US EPA NESHAPs and the hazardous air pollutant list of Ministry of Environment in Korea were selected. As a results 8 chemicals (44.4%) of the selected 18 HAPs were VOCs. Cyanides (cyanides) and ethylene oxides (epoxy resins), and tetrachloro-ethylene (aliphatic compounds, halides) showed long half-lives. Cyanide HAPs especially had the highest half-life with the estimated value of 356.533 days. Nickel compounds (heavy metal compounds) possessed the highest water solubility followed by acetaldehyde (aldehyde compounds), ethylene oxides, and 1,4-dioxanes. The halides, including tetrachloro-ethylenes, carbon tetra-chlorides, benzene (aromatic compounds), and lead (heavy metals), are estimated to take the longest time for biodegradation. Tetrachloroethylene, with the acute toxicity end point of 3.685-7.033 mg/L, was assessed to be the most highly toxic substance among the 18 HAPs. However, considering the absence of the HAPs in the common category of log $K_{ow}{\geq}4$and $BCF{\geq}500$, which indicates the standard of bioconcentration potentials, potentials of the bioconcentration are considered to be low.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.383-383
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• 2009

Silicon is commercially prepared by the reaction of high-purity silica with wood, charcoal, and coal, in an electric arc furnace using carbon electrodes, so called the metallurgical refining process, which produces ~98% pure Si (MG-Si). This can be further purified to solar grade silicon (SoG-Si) by various techniques. The most problematic impurity elements are B and P because of their high segregation coefficients. In this study, we explored the possibility of the using Cat-CVD for Si purification. The existing hot-wire CVD was modified to accommodate the catalyzer and the heating source. Mo boat (1.5 cm ${\times}$ 1 cm ${\times}$ 0.2 cm) was used as a heating source. Commercially available Si was purchased from Nilaco corporation (~99% pure). This powder was kept in the Mo-boat and heated to the purification temperature. In addition to the purification by cat-CVD technique, other methods such as thermal CVD, plasma enhanced CVD, vacuum annealing was also tried. It is found that the impurities are reduced to a great extent when treated with cat-CVD method.