• 한국전기전자재료학회논문지
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• 제15권6호
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• pp.551-557
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• 2002

Carbon nitride films have been deposited on Si(100) substrate by a high voltage discharge plasma combined with laser ablation in a nitrogen atmosphere. The films were grown both with the without the presence of an assisting focused Nd:YAG laser ablation. The laser ablation of the graphite target leads to vapor plume plasma expending into th ambient nitrogen arc discharge area. X-ray photoelectron spectroscopy and Auger electron spectroscopy were used to identify the binding structure and the content of the nitrogen species in the deposited films. The nitrogen content of the films was found to increase drastically with an increase of nitrogen pressure. The surface morphology of the films was studied using a scanning electron microscopy. Data of infrared spectroscopy and x-ray photoelectron spectroscopy indicate the existence of carbon-nitrogen bonds in the films. The x-ray diffraction measurements have also been taken to characterize the crystal properties of the obtained films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.240-243
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• 2002

Carbon nitride films have been deposited on Si(100) substrate by a high voltage discharge plasma combined with laser ablation in a nitrogen atmosphere. The films were grown both with and without the Presence of an assisting focused Nd:YAG laser ablation. The laser ablation of the graphite target leads to vapor Plume plasma expending into the ambient nitrogen arc discharge area. X-ray photoelectron spectroscopy and Auger electron spectroscopy were used to identify the binding structure and the content of the nitrogen species in the deposited films. The surface morphology of the films was studied using a scanning electron microscopy Data of infrared spectroscopy and x-ray photoelectron spectroscopy indicate the existence of carbon-nitrogen bonds in the films. The x-ray diffraction measurements have also been taken to characterize the crystal properties of the obtain films.

• 한국전기전자재료학회논문지
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• 제15권2호
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• pp.184-189
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• 2002

Carbon nitride films were grown on Si (100) substrate by a laser-electric discharge method with/without a magnetic field assistance. The magnetic field leads to vapor plume plasma expending upon the ambient arc discharge plasma area. Influence of the magnetic field has resulted in increased of a crystallite size int he films due to bombardment (heating) of Si substrates by energetic carbon and nitrogen species generated during cyclotron motion of electrons in the discharge zone. The surface morphology of the films with a deposition time of 2 hours was studied using a scanning electron microscopy (SEM). In order to determine the structural crystalline parameters, X-ray diffraction (XRD) was used to analysis the grown films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.87-88
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• 2007

반도체 소자가 초고집적화 되어감에 따라 반도체 공정에서 선폭은 줄어들고 박막은 다층화 되어가고 있다. 이와 같은 제조 공정 하에서는 Si 기판과 금속 박막간의 확산이 커다란 문제로 부각되어 왔다. 특히 Cu는 높은 확산성에 의하여 Si 기판과 접합에서 많은 확산에 의한 문제가 발생하게 되며, 또한 선폭이 줄어듦에 따라 고열이 발생하여 실리콘으로 spiking이 발생하게 된다. 이러한 확산을 방지하기 위하여 이 논문에서는 Tungsten - Carbon - Nitrogen (W-C-N)에 Boron (B)을 첨가하였고, Boron 타겟 power을 조절하여 다양한 조성을 가지는 W-B-C-N 확산방지막을 제작하여 각 조성에 따른 증착률을 조서하였고 $1000^{\circ}C$까지 열처리하여 그 비저항을 측정하여 각 특성을 확인하였다.

• 센서학회지
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• 제9권3호
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• pp.248-255
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• 2000

타겟을 상하 2개 설치한 페닝소스 스퍼터링 장치를 구현하였다. 이 시스템을 이용하여 결정성 질화탄소막을 성장하고 그 물리적 특성을 조사하였다. RBS 측정을 통해 스퍼터링가스 중 Ar의 비율을 감소시키고 질소의 비율을 증가시키면 철의 스퍼터링이 감소되는 것을 알 수 있었다. 성장된 질화탄소막의 결정립 크기는 약 $150{\AA}$에서 $250{\AA}$의 분포를 이루고 있었다. 스퍼터링가스 중 질소의 분압이 증가할수록 증착율 및 성장된 질화탄소막 중 질소량은 증가하였다.

• Transactions on Electrical and Electronic Materials
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• 제3권3호
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• pp.29-33
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• 2002

A procedure was developed for preparing bulk carbon nitride crystals from a polymeric $\alpha$ -C$_3$N$\_$4.2/ at high pressure and temperature in the presence of seeds of crystalline carbon nitride films prepared by a high voltage discharge plasma combined with pulsed laser ablation of graphite target. The samples were evaluated by x-ray photoelectron spectroscopy (XPS), infrared (IR) spectroscopy, Auger electron spectroscopy (AES), secondary-ion mass spectrometry (SIMS), scanning electron microscopy (SEM) and x-ray diffraction (XRD). Notably, XPS studies of the film composition before and after thermobaric treatments demonstrate that the nitrogen composition in $\alpha$ -C$_3$N$\_$4.2/ material initially containing more than 58% nitrogen decreases during the annealing process and reaches a common, stable composition of ~45%. The thermobaric experiments were performed at 10-77 kbar and 350-1200 $\^{C}$.

• 한국표면공학회지
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• 제56권5호
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• pp.328-334
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• 2023

The carbon-based films have various properties, which have been widely applied in industrial application. However, it has critical drawback for poor adhesion between films and metal substrate. In the present work, we have deposited carbon-based films on injection mold steel by plasma assisted chemical vapor deposition (PACVD). In order to improve adhesion, prior to film deposition, the substrate was nitriding-treated using PACVD. And its effect on the adhesion was investigated. Due to the pre-nitriding, the amorphous carbon nitride (a-CN:H) films presented 10 times higher adhesion (34.9 N) than that of un-nitirided. In addition, a friction coefficient was decreased from 0.29 to 0.15 for the amorphous carbon (a-C:H) due to improved adhesion. The obtained results demonstrated that pre-nitriding considerably improved the adhesion, and the relationship among adhesion, hardness, and surface roughness was discussed in detail.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제36회 동계학술대회 초록집
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• pp.283.2-283.2
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• 2009

• 한국진공학회지
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• 제7권3호
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• pp.242-247
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• 1998

DC saddle-field-plasma-enhanced chemical-vapor deposition(PECVD) 장치를 이용 하여 상온에서 p-type Si(100)기판위에 hydrogenated amorphous carbon nitride [a-C:H(N)] 박막을 증착하였다. 원료가스인 $CH_4$과 $N_2$의 전체압력은 90mTorr로 고정하고 $N_2/CH_4$비를 0 에서 4까지 변화하면서 제작한 a-C:H(N)박막의 미세구조의 변화를 연구하였다. 진공조의 도달 진공도는 $1\times10^{-6}$Torr이고, 본 실험시 $N_2+CH_4$가스의 유량은 5sccm으로 고정하고 배 기량을 조절하여 진공조의 가스 압력을 90mTorr로 고정하였으며 기판에 200V의 직류 bias 전압을 인가하였다. $\alpha$-step과 X-ray photoelectron spectroscopy(XPS)를 이용한 분석결과 $N_2/CH_4$비가 0에서 0.5로 증가함에 따라 박막 두께는 4840$\AA$에서 2600$\AA$으로 급격히 감소하 였으며, 박막내의 탄소에 대한 질소함유량(N/C비)는 N2/CH4비가 4일 때 최대 0.25로 증가하 는 것을 확인하였다. 또한 XPS 스펙트럼의 fitting 결과 $N_2/CH_4$비가 증가할수록 CN결합이 증가하였다. Fourier Transformation Infrared(FT-IR) 분석결과 $N_2/CH_4$비가 증가함에 따라 박막내의 C-H결합은 감소하고, N-H, C≡N결합은 증가하였다. Optical bandgap 측정 결과 $N_2/CH_4$비가 0에서 4로 증가함에 따라 a-C:H(N)박막의 bandgap 에너지는 2.53eV에서 2.3eV 로 감소하는 것을 확인하였다.

• 한국자기학회지
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• 제15권2호
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• pp.130-132
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• 2005

Tungsten carbon nitride (W-C-N) thin films were produced by reactive radio frequency (RF) magnetron sputter-ing of tungsten in $Ar-N_2$ gas mixture. The effects of the variation of nitrogen partial pressure on the composition, and structural properties of these films as well as the influence of post-deposition annealing have been studied. When $La_{0.67}Sr_{0.33}MnO_3$ was coated on the W-C-N/Si substrate, coercivity ($H_c$) and magnetization at room temperature shows 58.73 Oe, and 29.4 emu/cc, respectively. In order to improve the diffusion barrier characteristics, we have studied the impurity behaviors to control the ratios of nitrogen and carbon concentrations.