• 한국세라믹학회지
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• 제32권10호
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• pp.1194-1202
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• 1995

The influences of TiC additions to the α-SiC on microstructural, mechanical, and electrical properties were investigated. Electrical discharge machinability of SiC-TiC composites was also studied. Samples were prepared by adding 30, 45, 60 wt.% TiC particles as a second phase to a SiC matrix. Sintering of SiC-TiC composites was done by hot pressing under a vacuum atmospehre from 1000 to 2000℃ with a pressure of 32 MPa and held for 90 minutes at 2000℃. Samples obtained by hot pressing were fully dense with the relative densities over 99% except 60wt.% TiC samples. Flexural strength and fracture toughness of the samples were increased with the TiC content. In case of SiC samples containing 45 wt.% TiC, the fracture toughness showed 90% increase compared to that of monolithic SiC sample. The crack propagation and crack deflection were observed with a SEM for etched samples after Vicker's indentation. The electrical resistivities of SiC-TiC composites were measured utilizing the four-point probe. The electrical dischage machining of composites was also conducted to evaluate the machinability.

• 한국세라믹학회지
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• 제48권2호
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• pp.173-177
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• 2011

Decomposition promoting factors and decomposition mechanism in the zinc decomposition process of waste hard metals which are composed mostly of tungsten carbide and cobalt were evaluated. Zinc volatility amount was suppressed and zinc valatilization pressure was produced in the reaction graphite crucible inside an electric furnace for ZDP. Reaction was done for 2 h at $650^{\circ}C$, which 100 % decomposed the waste hard metals that were over 30 mm thick. As for the separation-decomposition of waste hard metals, zinc melted alloy formed a liquid composed of a mixture of ${\gamma}-{\beta}1$ phase from the cobalt binder layer (reaction interface). The volume of reacted zone was expanded and the waste hard metal layer was decomposed-separated horizontally from the hard metal. Zinc used in the ZDP process was almost completely removed-collected by decantation and volatilization-collection process at $1000^{\circ}C$.

• 한국분말재료학회지
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• 제1권2호
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• pp.153-158
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• 1994

The effect of the role of alloyed components on the densification of two kind of high speed steel (mixed and prealloyed powder), which were sintered at 1403~ 1573 K for 7.2 ks in vacuum, was investigated. The results obtained were as follows. (1) Without the presence of Vanadium (V), the relative density of sintered compacts (Ds) could not reached the density of 100% regardless of the. elements in the compacts. (2) The addition of V up to 2 mass% did not result In the complete densification when the carbon content was fixed at 2% in the compact. (3) With the fixed amount of V of 7%, Ds decreased with the increase of the carbon content. (4) The addition of mixed fine powder to the prealloyed powder in the range of 20 to 40% provided the complete densification and carbide panicles of 1~2 $\mu\textrm{m}$ through the solid phase sintering. (5) The V element played important role in controlling the complete or incomplete densification of the sintered compacts in the alloyed component because of its formation of stable oxide and carbide as well as the low equilibrium pressure of CO gas.

• 한국표면공학회지
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• 제41권2호
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• pp.43-47
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• 2008

Cubic boron nitride(c-BN) films were deposited on tungsten carbide insert tool by microwave plasma enhanced chemical vapor deposition(MPECVD) from a gas mixture of triethyl borate$(B(C_2H_5O)_3)$, ammonia $(NH_3)$, hydrogen$(H_2)$ and argon(Ar). The qualities of deposited thin film were investigated by x-ray diffrac-tion(XRD), field emission scanning electron microscopy(FE-SEM) and micro Raman spectroscope. The surface morphologies of the synthesised BN as well as crystallinity appear to be highly dependent on the flow rate of $B(C_2H_5O)_3$ and $(NH_3)$ gases. The deposited film had more crystallized phases with 5 scem of $B(C_2H_5O)_3$ and $(NH_3)$ gases than with 2 sccm, and the phase was identified as c-BN by micro Raman spectroscope and XRD. The adhesion strength were also increased with increasing flow rates of $B(C_2H_5O)_3$ and $(NH_3)$ gases.

• Carbon letters
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• 제18권
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• pp.37-42
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• 2016

Graphene was grown on molybdenum (Mo) foil by a chemical vapor deposition method at different growth temperatures (1000℃, 1100℃, and 1200℃). The properties of graphene were investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy, and Raman spectroscopy. The results showed that the quality of the deposited graphene layer was affected by the growth temperature. XRD results showed the presence of a carbide phase on the Mo surface; the presence of carbide was more intense at 1200℃. Additionally, a higher I_2D/I_G ratio (0.418) was observed at 1200℃, which implies that there are fewer graphene layers at this temperature. The lowest I_D/I_G ratio (0.908) for the graphene layers was obtained at 1200℃, suggesting that graphene had fewer defects at this temperature. The size of the graphene domains was also calculated. We found that by increasing the growth temperature, the graphene domain size also increased.

• 한국세라믹학회지
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• 제37권4호
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• pp.320-326
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• 2000

Development of texture in SiC materials by hot-pressing and subsequent annealing was studied. Crystallographic texture type was characterized by measuring X-ray pole figures on the perpendicular plane to the hot-pressing direction. Observed all pole figures were nearly axially symmetric (fiber texture). In case of ${\beta}$-SiC materials, the pole density of basal plane (0004) increased as annealing time increased, in contrast, other planes (hkil) of ${\beta}$-SiC materials and all planes of ${\alpha}$-SiC materials nearly remained unchanged. In the case of ${\beta}$-SiC materials, therefore, a weak texture of (0001) plane at the normal direction took place in the 8h annealed samples, resulting from grian growth. The fracture toughness values of ${\alpha}$-SiC materials measured in both planes parallel and perpendicular to the hot-pressing direction were very similar. However, the fracture toughness of ${\beta}$-SiC materials measured parallel to the hot-pressing direction were higher than that measured perpendicular to the hot-pressing derection, relatively, because of the texture and the microstructure anisotropy.

• 한국세라믹학회지
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• 제49권6호
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• pp.523-527
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• 2012

Silicon carbide (SiC) has recently drawn an enormous amount of industrial interest due to its useful mechanical properties, such as its thermal resistance, abrasion resistance and thermal conductivity at high temperatures. In this study, RF thermal plasma (PL-35 Induction Plasma, Tekna CO., Canada) was utilized for the synthesis of high-purity SiC powder from an organic precursor (hexamethyldisilazane, vinyltrimethoxysilane). It was found that the SiC powders obtained by the RF thermal plasma treatment included free carbon and amorphous silica ($SiO_2$). The SiC powders were further purified by a thermal treatment and a HF treatment, resulting in high-purity SiC nano-powder. The particle diameter of the synthesized SiC powder was less than 30 nm. Detailed properties of the microstructure, phase composition, and free carbon content were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), a thermogravimetric (TG) analysis, according to the and Brunauer-Emmett-Teller (BET) specific surface area from N2 isotherms at 77 K.

• 한국분말재료학회지
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• 제12권2호
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• pp.112-116
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• 2005

In the present study, the focus is on the analysis of carbothermal reduction of oxide powder prepared from waste WC/Co hardmetal by solid carbon under a stream of argon for the recycling of the WC/Co hard-metal. The oxide powder was prepared by the combination of the oxidation and crushing processes using the waste $WC-8 wt.\%Co$ hardmetal as the raw material. This oxide powder was mixed with carbon black, and then this mixture was carbothermally reduced under a flowing argon atmosphere. The changes in the phase structure and gases discharge of the mixture during carbothermal reduction was analysed using XRD and gas analyzer. The oxide powder prepared from waste $WC-8wt.\%Co$ hardmetal has a mixture of $WO_{3} and CoWO_{4}$. This oxide powder reduced at about $850^{\circ}C$, formed tungsten carbides at about $950^{\circ}C$, and then fully transformed to a mixed state of tungsten carbide (WC) and cobalt at about $1100^{\circ}C$ by solid carbon under a stream of argon. The WC/Co composite powder synthesized at $1000^{\circ}C$ for 6 hours from oxide powder of waste $WC-8wt.\%Co$ hardmetal has an average particle size of $0.3 {\mu}m$.

• 한국분말재료학회지
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• 제10권4호
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• pp.228-234
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• 2003

In the present study, the focus is on the synthesis of titanium carbide/cobalt composite powder by the spray thermal conversion process using metallic salt solution as the raw materials. Two types of oxide powders of Ti-Co-O system were prepared by the spray drying of two types of metallic salt solutions : titanium chloride-cobalt nitrate and $TiO_2$ powder-cobalt nitrate solutions. These oxide powders were mixed with carbon black, and then these mixtures were carbothermal reduced under a flowing argon atmosphere. The changes in the phase structure and thermal gravity of the mixtures during carbothermal reduction were analysed using XRD and TG-DTA. In the case of using the titanium chloride-cobalt nitrate solution, it could not be obtained TiC/Co composite powder due to contamination of the impurities during the spray drying of the solution. However, in tile case of using the $TiO_2$ powder-cobalt nitrate scullion, TiC-15 wt. %Co composite powder could be synthesized by the spray thermal conversion process. The synthesized TiC-15 wt. %Co composite powder at 120$0^{\circ}C$ for 2 hours has average particle size of 150 nm.

• Journal of Power Electronics
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• 제18권1호
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• pp.23-33
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• 2018

Silicon Carbide (SiC) MOSFET belongs to the family of wide-band gap devices with inherit property of low switching and conduction losses. The stable operation of SiC MOSFET at higher operating temperatures has invoked the interest of researchers in terms of its application to high power density (HPD) power converters. This paper presents a performance study of SiC MOSFET based two-phase interleaved boost converter (IBC) for regulation of avionics bus voltage in more electric aircraft (MEA). A 450W HPD, IBC has been developed for study, which delivers 28V output voltage when supplied by 24V battery. A gate driver design for SiC MOSFET is presented which ensures the operation of converter at 250kHz switching frequency, reduces the miller current and gate signal ringing. The peak current mode control (PCMC) has been employed for load voltage regulation. The efficiency of SiC MOSFET based IBC converter is compared against Si counterpart. Experimentally obtained efficiency results are presented to show that SiC MOSFET is the device of choice under a heavy load and high switching frequency operation.