• Journal of IKEEE
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• v.19 no.4
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• pp.491-499
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• 2015

Silicon Carbide(SiC) has large advantage in high temperature and high voltage applications because of its high thermal conductivity and large band gap energy. When using SiC to design power semiconductor devices, edge termination techniques have to be adjusted for its maximum breakdown voltage characteristics. Many edge termination techniques have been proposed, and the most appropriate technique for SiC device is Junction Termination Extension(JTE). In this paper, the change of breakdown voltage efficiency ratio according to the change of doping concentration and passivation oxide charge of each JTE techniques is demonstrated. As a result, the maximum breakdown voltage ratio of Single Zone JTE(SZ-JTE), Double Zone JTE(DZ-JTE), Multiple Floating Zone JTE(MFZ-JTE), and Space Modulated JTE(SM-JTE) is 98.24%, 99.02%, 98.98%, 99.22% each. MFZ-JTE has the smallest and SZ-JTE has the largest sensitivity of breakdown voltage ratios according to the change of JTE doping concentration. Additionally the degradation of breakdown voltage due to the passivation oxide charge is analyzed, and the sensitivity is largest in SZ-JTE and smallest in MFZ-JTE, too. In this paper, DZ-JTE and SM-JTE is the best efficiency JTE techniques than MFZ-JTE which needs large doping concentration in short JTE width.

• Tunnel and Underground Space
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• v.33 no.6
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• pp.519-533
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• 2023

In this study, the linear cutting tests of pick cutters were carried out on a granitic rock with the average compressive strength over 100 MPa. From the tests, the correlation between the cutter acting force and the temperature measured by infrared thermal imaging camera during rock cutting was analyzed. In every experimental condition, the maximum temperature was measured at the rock surface where the chipping occurred, and the temperature generated in the rock was closely correlated with the cutter acting force. On the other hand, the temperature of a pick cutter increased up to only 36℃ above the ambient temperature, and the correlation with the cutter force was not obvious. This can be attributed to the short cutting distance under laboratory conditions and the high thermal conductivity of the tungsten carbide inserts. However, the relatively high temperature of the tungsten carbide inserts was found to be maintained. Therefore, it is recommended that a reinforcement between the insert and the head of a pick cutter or the quality improvement of silvering brazing in the production of a cutter is necessary to maintain the high cutting performance of a pick cutter.

• Journal of Technologic Dentistry
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• v.28 no.2
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• pp.355-366
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• 2006

The purpose of this study was to determine if repeated casting has a detrimental effect on the corrosion behavior of nickel-chrome casting alloys. The X-ray diffraction analysis, vickers hardness test, SEM, EDX and corrosion test were performed to determine the effects of recasting on chemical composition, microstructure, physical property, castability and corrosion behavior of nickel-chrome casting alloys. The X-ray diffraction analysis results for the cast and recast specimens of the VeraBond and the Rexillium V showed that major crystal phase contained nickel-chrome compounds, Nickel carbide and Chrome carbide. Microstructure analysis results for the cast and recast specimens of the VeraBond and the Rexillium V showed recasting has no effect on microstructure. EDX analysis results indicated the percentage of the main component nickel(Ni) in the specimens of the VeraBond showed a tendency to increase with recasting, but those of other components Carbon(C) showed a tendency to decrease with recasting, Chrome(Cr), Silicon(Si), Aluminium(Al) and molybdenum(Mo) showed no changes in the percentage. The percentage of the main component nickel(Ni) in the specimens of the Rexillium V showed a tendency to increase with recasting, but those of other components silicon(Si), carbon(C) and molybdenum(Mo) showed a tendency to decrease with recasting, chrome(Cr) and aluminium(Al) showed no changes in the percentage. The vickers hardness results for the cast and recast specimens of the VeraBond and the Rexillium V showed a tendency to decrease with recasting, but the differences for the first to fifth cast were not statistically significant. The castability results for the cast and recast specimens of the VeraBond and the Rexillium V showed a tendency to decrease with recasting, but the differences for the first to fifth cast were not statistically significant. The cast and recast specimens of the VeraBond and the Rexillium V showed no differences in the corrosion resistance. The results indicate that the VeraBond and the Rexillium V can be safely recast.

• The korean journal of orthodontics
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• v.22 no.3 s.38
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• pp.557-578
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• 1992

Heat treatment which removes internal stress enhances the mechanical properties of the orthodontic arch wire. The main purpose of this experiment was to investigate the effects of the heat treatment on the mechanical properties of the Elgiloy wire. The Elfiloy wire, 0.016' X 0.022' and 0.018' X 0.025', were heat treated in an electric oven for 5, 10 and 15 minutes at selected temperatures between 300 and $900^{\circ}C$. Tensile strength and load deflection rate were measured to reveal the changes of mechanical property at various conditions, and each specimen was observed under metallurgic microscope. Also to trace the precipitation material due to overheat treatment, a qualitative analysis was carried out with EDS system. It was found that heat treatment at a low temperature caused an increase in the tensile strength and bending resistance, and a maintenance in the fibrous in the tensile strength and bending resistance, and a maintenance in the fibrous structure of both sizes of wire. The changes observed in properties and appearance were probably due to the relief of internal stresses incurred in the metal during cold working. In both sizes of wire the tensile strength and the bending resistance continued to decrease at high temperature, and the fibrous structure continued to disappear then was not observed at $900^{\circ}C$. The carbide precipitation founded in grain boundary at $750^{\circ}C$ probably was other elements carbide (Ni, Co) except Cr. The grain growth was observed at $1100^{\circ}C$. Optimum heat treatment for the 0.016' X 0.022' Elgiloy wire was 10 minutes at $500^{\circ}C$, and for the 0.018' X 0.025' Elgiloy wire it was 5 to 15 minutes at $500^{\circ}C$.

• Journal of Powder Materials
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• v.25 no.3
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• pp.251-256
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• 2018

We report the feasibility of TaC production via self-propagating high temperature synthesis, and the influence of the initial green compact density on the final composite particle size. Experiments are carried out from a minimum pressure of 0.3 MPa, the pressure at which the initial green body becomes self-standing, up to 3 MPa, the point at which no further combustion occurs. The green density of the pellets varies from 29.99% to 42.97%, as compared with the theoretical density. The increase in green density decreases the powder size of TaC, and the smallest particle size is observed with 1.5 MPa, at $10.36{\mu}m$. Phase analysis results confirm the presence of the TaC phase only. In the range of 0.3-0.5 MPa, traces of unreacted Ta and C residues are detected. However, results also show the presence of only C residue in the matrix within the pressure range of 0.6-3.0 MPa.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.104-111
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• 2001

B-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films were prepared by plasma-enhanced chemical-vapor deposition in a gas mixture of $SiH_4, CH_4,\;and\; B_2H_6$. Physical and chemical properties of a-SiC:H films grown with varing the ratio of $B_2H_6/(SiH_4+CH_4)$ were characterized with various analysis methods including scanning electron microscopy (SEM), X-ray diffractometry (XRD), Raman spectroscopy, Fourier-transform infrared (FTIR) spectroscopy, secondary ion mass spectroscopy (SIMS), UV absorption CH_4spectroscopy and electrical conductivity measurements. With the B-doping concentration, the doping efficiency and the micro-crystallinity were decreased and the film became amorphous when $B_2H_6/(SiH_4{plus}CH_4)$ was over $5{\times}10^{-3}$. The addition of $B_2H_6$ gas during deposition decreased the H content in the film by lowering the quantity of Si-C-H bonds. Consequently, the optical band gap and the activation energy of a-SiC:H films were decreased with increasing the B-doping level.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.32-32
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• 2009

Silicon carbide (SiC) is a wide-bandgap semiconductor that has materials properties necessary for the high-power, high-frequency, high-temperature, and radiation-hard condition applications, where silicon devices cannot perform. SiC is also the only compound semiconductor material. on which a silicon oxide layer can be thermally grown, and therefore may fabrication processes used in Si-based technology can be adapted to SiC. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, we investigated that the local oxide growth on SiC under various conditions and demonstrated that an increased (up to ~100 nN) tip loading force (LF) on highly-doped SiC can lead a direct oxide growth (up to few tens of nm) on 4H-SiC. In addition, the surface potential and topography distributions of nano-scale patterned structures on SiC were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the nano-scale patterned on SiC was higher than that of original SiC surface. The results confirm the concept of the work function and the barrier heights of oxide structures/SiC structures.

• Journal of Powder Materials
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• v.11 no.1
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• pp.28-33
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• 2004

In the present study, the focus is on the analysis of carbothermal reduction of the titanium-cobalt-oxygen based oxide powder by solid carbon for the optimizing synthesis process of ultra fined TiC/Co composite powder. The titanium-cobalt-oxygen based oxide powder was prepared by the combination of the spray drying and desalting processes using the titanium dioxide powder and cobalt nitrate as the raw materials. The titanium-cobalt-oxygen based oxide powder was mixed with carbon black, and then this mixture was carbothermally reduced under a flowing argon atmosphere. The changes in the phase structure and thermal gravity of the mixture during carbothermal reduction were analysed using XRD and TGA. The synthesized titanium-cobalt-oxygen based oxide powder has a mixture of $TiO_2$ and $CoTiO_3$. This oxide powder was transformed to a mixed state of titanium car-bide and cobalt by solid carbon through four steps of carbothermal reduction steps with increasing temperature; reduction of $CoTiO_3$ to $TiO_2$ and Co, reduction of $TiO_2$, to the magneli phase($Ti_nO_{2n-1}$, n>3), reduction of the mag-neli phase($Ti_nO_{2n-1}$, n>3) to the $Ti_nO_{2n-1}$(2$\leq$n$\leq$3) phases, and reduction and carburization of the $Ti_nO_{2n-1}$(2$\leq$n$\leq$3) phases to titanium carbide.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.314-314
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• 2010

The SiC-$ZrB_2$ composites were fabricated by combining 40vol.% of Zirconium Diboride(hereafter, $ZrB_2$) powders with Silicon Carbide(hereafter, SiC) matrix. TheSiC+40vol.%$ZrB_2$ composites were manufactured through Spark Plasma Sintering(hereafter, SPS) under argon atmosphere, uniaxial pressure of 50MPa, heating rate of $100^{\circ}C$/min, sintering temperature of $1,500^{\circ}C$ and holding time of 5min. But one on/off pulse sequence(one pulse time: 2.78ms) is 10:9(hereafter, SZ10), and the other is 48:8(hereafter, SZ48). The physical and mechanical properties of the SZ12 and SZ48 were examined. Reactions between $\beta$-SiC and $ZrB_2$ were not observed via X-Ray Diffraction(hereafter, XRD) analysis. The apparent porosity of the SZ10 and SZ48 composites were 9.7455 and 12.2766%, respectively. The SZ10 composite, 593.87MPa, had higher flexural strength than the SZ48 composite, 324.78MPa, at room temperature. The electrical properties of the SiC-$ZrB_2$ composites had Positive Temperature Coefficient Resistance(hereafter, PTCR).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.818-824
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• 2006

The effects of high-temperature process required to fabricate the SiC devices on the surface morphology and the electrical characteristics were investigated for 4H-SiC Schottky diodes. The 4H-SiC diodes without a graphite cap layer as a protection layer showed catastrophic increase in an excess current at a forward bias and a leakage current at a reverse bias after high-temperature annealing process. Moreover it seemed to deviate from the conventional Schottky characteristics and to operate as an ohmic contact at the low bias regime. However, the 4H-SiC diodes with the graphite cap still exhibited their good electrical characteristics in spite of a slight increase in the leakage current. Therefore, we found that the graphite cap layer serves well as the protection layer of silicon carbide surface during high-temperature annealing. Based on a closer analysis on electric characteristics, a conductive surface transfiguration layer was suspected to form on the surface of diodes without the graphite cap layer during high-temperature annealing. After removing the surface transfiguration layer using ICP-RIE, Schottky diode without the graphite cap layer and having poor electrical characteristics showed a dramatic improvement in its characteristics including the ideality factor[${\eta}$] of 1.23, the schottky barrier height[${\Phi}$] of 1.39 eV, and the leakage current of $7.75\{times}10^{-8}\;A/cm^{2}$ at the reverse bias of -10 V.