• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.12
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• pp.2000-2007
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• 2016

Generally, in order to implement the CRM(Critical Conduction Mode), the analog controller is used rather than a digital controller because the control is simple and uses less power. However, according to the semiconductor technology development and various user needs, digital control system based on a DSP is on the rise. Therefore, in this paper, the CRM bridgeless PFC converter based on a digital control is proposed. It is necessary to detect the inductor current when it reaches zero and peak value, for calculating the on time and off time by using the current information. However, in this paper, the on-time and off-time are calculated by using the proposed algorithm without any current information. If the switching-times are calculated through the steady-state analysis of the converter, they do not reflect transient status such as starting-up. Therefore, the calculated frequency is out of range, and the transient current is generated. In order to solve these problems, limitation method of the on-time and off-time is used, and the limitation values are varied according to the voltage reference. In addition, in steady state, depending on the switching frequency, the inductance is varied because of the resonance between the inductor and the parasitic capacitance of the switching elements. In order to solve the problem, inductance are measured depending on the switching frequency. The measured inductance are used to calculate the switching time for preventing the transient current. Simulation and experimental results are presented to verify the proposed method.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.3
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• pp.45-54
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• 2004

Microwave characteristics of ridge type CPW traveling-wave(TW) electroabsorption modulator and photodetector are affected by the thickness of intrinsic layer, width of guiding layer, and the separation of signal and ground electrodes. These factors are determined effective index of microwave and characteristic impedance due to changing of capacitance(C) and inductance(L) of device. However, conventional equivalent circuit of TW-structure is approximated to microstrip and CPW transmission line by distribution of electric and magnetic fields, respectively. In this paper, we analyzed microwave characteristics of TW-structure and found more accurate value of C and L by using finite difference time domain (FDTD) method. These values are adopted circuit element of equivalent circuit. Microwave characteristics obtained by the FDTD and equivalent circuit model show good agreement.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.5 s.120
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• pp.478-485
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• 2007

In this paper, an unequal 1:N Wilkinson power divider with adjustable dividing ratio is proposed. The proposed unequal power divider is composed of basic Wilkinson structure. It consists of rectangular-shaped defected ground structure (DGS), isolated island pattern in DGS, and varactor diodes of which capacitance depends on bias voltage. The characteristic impedance value of microstrip line having DGS goes up and down by controlling bias voltage for diodes, and consequently the power dividing ratio(N) is adjusted. The obtained N from measurement is $2.59{\sim}10.4$ which mean the proposed divider has adjustable unequal dividing ratio.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.5
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• pp.555-560
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• 2014

In order to improve spectrum sensitivity of photodiode for detection of the laser wavelength at 850 nm ~ 1000 nm of near-infrared band, this study has produced silicon-based photodiode whose area is $5000{\mu}m{\times}2000{\mu}m$, and the thickness is $280{\mu}m$. It was packed by the TO-5 type. The electrical properties of the dark currents have valued of approximately 0.1 nA for 5 V reverse bias, while the capacitance showed 32.5 pF at frequency range of 1 kHz and about 32.4 pF at the range of 200 kHz for 0 V. In addition, the rising time of output signal was as fast response as 20.92 ns for 10V. For the optical properties, the best spectrum sensitivity was 0.57 A/W for 890 nm, while it was relatively excellent value of 0.37 A/W for 1,000 nm. Over all, there were good spectrum sensitivity for this diode over the range of 870 ~ 920 nm.

• The Journal of the Society of Korean Medicine Diagnostics
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• v.9 no.2
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• pp.72-82
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• 2005

Background and purpose: Bell‘s Palsy is a condition that causes the facial muscles to weaken or become paralyzed. It's caused by trauma to the 7th cranial nerve, and is not permanent. The aim of this study is to be convinced of differences between facial electrodermal activities of paralyzed side and those of normal side in acute stage of Bell's Palsy patients Methods: Electrodermal activity (EDA) was performed within 1 week after the onset of facial palsy and facial nerve electromyography (EMG) at 2 weeks after the onset. The recovery of facial nerve function was documented by House and Brackmann grading. All the patients were followed up weekly until recovery or up to 6 weeks. Results: There was significant differences (conductivity A: t=3.319, p=0.002; conductivity C: t=2.699, p=0.010) between facial electrodermal conductivities of paralyzed side and those of normal side in acute stage of Bell's Palsy patients (N=45). And the result showed that logarithmic scale of electrodermal conductivity A value ratio obviousely decreased with logarithmic scale of EMG zygomatic branch amplitude ratio (r=-0.472, p=0.143); logarithmic scale of capacitance B, logarithmic scale of EMG temporal branch amplitude ratio (r=-0.422, p=0.133); logarithmic scale of conductivity C, logarithmic scale of EMG buccal branch amplitude ratio (r=-0.545, p=0.083) (N=12). Conclusion: Electrodermal conductivities increased in paralyzed facial side in acute stage of Bell's Palsy patients.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2017.10a
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• pp.59-60
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• 2017

In this paper, we studied a design method for obtaining broadband property by loading a chip capacitor on a coplanar waveguide(CPW)-fed compact quasi-Yagi antenna(QYA). The proposed antenna is a three-element QYA with dipole, reflector, and director. To reduce the size, the ends of both dipole and reflector are bent, and balun is incorporated in the antenna. To improve impedance matching, the loading position and capacitance value of chip capacitor were determined. From some simulations, the proposed antenna using an FR4 substrate with a size of 90 mm by 90 mm was designed for the operation in a broadband covering the UHF RFID and GPS systems. The antenna showed a good performance with a broadband of 850-1,626 MHz(62.7%) for a VSWR ${\leq}2$, a gain ${\geq}3dBi$, and a frong-to-back ratio ${\geq}4.6dB$.

• The Transactions of the Korean Institute of Power Electronics
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• v.9 no.5
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• pp.457-466
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• 2004

In this paper, a modified converter is presented and analyzed to use as a photovoltaic converter. And also a new parallel driving scheme is proposed to increase output power and to reduce the output voltage ripple. The ratio of the output to the input voltage of the modified converter is equal to that of the boost converter. The difference between both converters is the composition of output terminal. Owing to the discrepancy, a working voltage of the output capacitor of the modified converter becomes lower, thus the capacitance value of the capacitor can be smaller than that of the boost converter. The proposed parallel driving is based on the modified converter and a current-mode-control method. It gives a good solution for alleviating the current sharing unbalance problem of conventional parallel operations. It reduces the output voltage ripple by means of increasing the equivalent switching frequency without additional switching losses. The validity of the proposed parallel driving strategy is verified through computer-aided simulations and experimental results.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1313-1314
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• 2007

This paper presents organic thin-film transistors (OTFTs) with poly(3-hexylthiophene)(P3HT) semiconductor and several polymeric dielectric materials of poly(vinyl phenol)(PVP), poly(vinyl alcohol)(PVA), and polyimide(PI) by using soluble process. The fabricated OTFT's have inverted staggered structure using transmission line method(TLM) pattern. In order to evaluate the electrical characteristics of the OTFT, capacitance-voltage(C-V) and current-voltage(I-V) were measured. C-V graphs were measured at several frequencies of 100 Hz, 1 kHz, and 1 MHz and ID-VDS graphs according to $V_{GS}$. The current on/off ratio and threshold voltage with each of PVP, PVA, and PI based OTFTs were measured to $10^3$, and -0.36, -0.41, and -0.62 V. Also, the calculated mobility with each of PVP, PVA, and PI was 0.097, 0.095, and 0.028 $cm^{2}V^{-1}s^{-1}$, respectively. In the cases of PVP and PVA, the hole mobility of P3HT was in excellent agreement with the published value of 0.1 $cm^{2}V^{-1}s^{-1}$.

• Journal of the Korean Society for Nondestructive Testing
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• v.36 no.3
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• pp.217-224
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• 2016

This paper presents a new technique for monitoring the concrete curing process using embedded piezoelectric transducers via admittance measurements. When a piezoelectric transducer is embedded in a structure, the electrical impedance (admittance) of the transducer is coupled with the mechanical impedance of the host structure, which allows monitoring of the structural condition. In this study, the admittance signatures are used for monitoring the concrete curing process. This new method is based on an admittance-based sensor diagnostic process, in which the capacitance values of the piezoelectric transducers are dependent on the strength of the host structure. We numerically and experimentally investigated the variations in capacitive value during the curing process. The results demonstrate that there is a clear relationship between the concrete curing status and the slope, this indicates that the proposed method could be efficiently used for monitoring the curing status of a concrete structure.

• Korean Journal of Materials Research
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• v.4 no.5
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• pp.510-515
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• 1994

Yttria-stabilized zirconia(YSZ) films were prepared onto p-type (100) silicon wafer by a plasma-enhanced metallorganic chemical vapor deposition(PE MO CVD) processing involving the application of vapor mixture of tri(2.2.6.6-tetramethyl-3, 5-heptanate) yttrium$[Y(DPM)_3]$, zirconiumtriflouracethyla cetonate$(Zr(tfacac)_4$ and oxygen gas. The x-ray diffraction(XRD) and fourier transform infrared spectra(FT1R) results showed that the deposited YSZ films had a single cubic phase. $Y_2O_3$ content of YSZ film was analyzed by PIXE(partic1e induced x-ray emission). The experimental results by PIXE revealed that 12.lmol%, 20.4mol% and 31.6mol% $Y_2O_3$ could be obtained as the $Y(DPM)_3$ bubbling temperature varied at $160^{\circ}C, 165^{\circ}C$ and $170^{\circ}C$ respectively. The increase of $Y(DPM)_3$ bubbling temperature caused shifting flat band voltage to have a negative value.