• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.4
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• pp.814-819
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• 2010

This study proposes the antenna circuit design for the transmitting wireless power, the development of the RF non-contact type Dosimeter. That is, the study designed the optimization and numerical analysis of the antenna circuit for the antenna design of 13.56MHz over the frequency bands for transmitting wireless power. We studied the needed items in the existing RF type Dosimeter with battery to implement the wireless power non-contact Dosimeter within the battery. We compared to the real measurement value as calculating the value of the inductance and capacitance through the numerical analysis for the antenna LC resonance using the theory of the electromagnetic induction method. This method to drive low power is designed to simplify the circuit and to improve the efficiency of the rectifier. We convince our research contributes not only to understand the simplified circuit and miniaturization, but also to help the design and application technology of the wireless power transmit system which is received power supply with wireless.

• Journal of the Korea Society of Computer and Information
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• v.3 no.3
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• pp.107-112
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• 1998

In this paper, filter designed and produced to use hi-Z low-Z filter which is easy to produce microstrip line and uses space less than used stub filter. This filter has very short electrical length of lines, that is Bl＜$\pi$/4, lowpass prototype series inductor replaced high impedance line section and shunt capacitance replaced low impedance line section. Replaced each section designed microstrip lines and effective permittivity of the given microstrip calculated and each section width and length calculated dna filter used design. Designed filter compared the theory value of touchstone with the experiment value of real produced filter and an analyzed response charictristic.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.11
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• pp.526-530
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• 2002

The $(Sr_{0.9}Ca_{0.1})TiO_3(SCT)$ thin films were deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method. The composition of SCT thin film deposited on Si substrate at room temperature is close to stoichiometry(1.081 in A/B ratio). The maximum dielectric constant of SCT thin film was obtained by ammealing at $600^{\cric}C$. The temperature dependence of dielectric loss showed a value within 0.02 in temperature ranges of -80 ${\sim}$ +90$^{\circ}C$. The capacitance characteristics showed a stable value within ${\pm}$4%. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films was observed at the frequency above 200kHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.872-875
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• 2003

Carbon nitride($CN_x$) thin films were deposited on quartz substrates using reactive RF magnetron sputtering system at uarious deposition conditions and investigated dielectric characteristics. Samples for capacitance measurements were of the MIM(Metal-Insulator-Metal) type devices. Aluminum film electrodes were prepared by a vacuum thermal evaporation method before and after the deposition of carbon nitride films. Capacitances were measured by a FLUKE PM6306 RCL Meter at room temperature. Current-voltage(I-V) characteristics and resistivity were measured by a CATS CA-EDA semiconductor test and analyzer. The carbon nitride films showed ${\alpha}-C_3N_4$ and ${\beta}-C_3N_4$ etc. peaks through Raman and FTIR. Observed surface of film and side structure using SEM(Scanning Electron Microscope), and measured thickness of film by ${\alpha}-step$. We can find that the dielectric constant was the lowest value in 50% nitrogen ratio and the resistivity was the highest value in 70% nitrogen ratio.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1456-1458
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• 1998

The $(Sr_{1-x}Ca_x)TiO_3(SCT)$ thin films were deposited at various substrate temperature using rf magnetron sputtering method on optimized Pt-coated electrodes ($Pt/TiN/SiO_2/Si$). The dielectric constant changes almost linearly in the temperature region of $-80{\sim}+90[^{\circ}C]$, the temperature characteristics of the dielectric loss exhibited a stable value within 0.1. The capacitance characteristics appears a stable value within ${\pm}5$[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz]. Dielectric constant of SCT thin films deposited on Si wafer substrate are larger with the increase of deposition temperature.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.305-308
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• 2002

An 1.8V 6bit IGSPS ADC for high speed data acquisition is discussed in this paper. This ADC is based on a flash ADC architecture because the flash ADC is the only practical architecture at conversion rates of IGSPS and beyond. A straightforward 6bit full flash A/D converter consists of two resistive ladders with 63 laps, 63 comparators and digital blocks. One important source of errors in flash A/D converter is caused by the capacitive feedthrough of the high frequency input signal to the resistive reference-lauder. Consequently. the voltage at each tap of the ladder network can change its nominal DC value. This means large transistors have a large parasitic capacitance. Therefore, a dual resistive ladder with capacitor is employed to fix the DC value. Each resistive ladder generates 32 clean reference voltages which alternates with each other. And a two-stage amplifier is also used to reduce the effect of the capacitive feedthrough by minimizing the size of MOS connected to reference voltage. The proposed ADC is based on 0.18${\mu}{\textrm}{m}$ 1-poly 6-metal n-well CMOS technology, and it consumes 307㎽ at 1.8V power supply.

• Journal of Electrochemical Science and Technology
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• v.11 no.4
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• pp.406-410
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• 2020

Despite a simple preparation of manganese oxide (MnO₂) nanowires by electrodeposition, the improvement in specific capacitance (C_sp) and voltammetric response of the MnO₂ nanowire-based electrodes has been quite limited. This is attributed to the poor electrical conductivity of MnO₂ and its dense bulk morphology due to the aggregation of the nanowires. This study investigated the capacitive performance of MnO₂ nanowires electrodeposited on agarose thin films. The good ionic conductivity and porous network of the agarose film provided favorable growth conditions for the MnO₂ nanowires with suppressed aggregation. A maximum C_sp value of 686 F/g measured at a scan rate of 10 mV/s was obtained, which was significantly larger than that of 314 F/g for the agarose-free MnO₂ electrode at the same scan rate. The rate capability was also improved. The C_sp measured at a high scan rate of 100 mV/s retained 74.0% of the value measured at 10 mV/s, superior to the retention of 71.1% for the agarose-free MnO₂ electrode.

• Journal of Advanced Navigation Technology
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• v.14 no.2
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• pp.176-182
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• 2010

This paper proposes that an inverse class-E amplifier is used a tunable parallel resonator at output port in order to maintain a high power-added efficiency(PAE) and output power with wide frequency ranges. A tunable circuit has a constant Q factor at operating frequency ranges and because of using varactor diode, the inductor and capacitor values of resonator can be changed. Also, the inductance value for zero-current switching (ZCS) is implemented a lumped element and the capacitance value is made a distributed element for phase compensation. The inverse class E amplifier using tunable parallel resonator is obtained to deliver 25dBm output power and achieve maximum power added efficiency(PAE) of 75% at 65-120MHz frequency ranges.

• Proceedings of the KIEE Conference
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• 1990.07a
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• pp.215-220
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• 1990

A.C. impedance properties of $RuO_2$ based thick film resistors which having different resistivity value (DuPont 1721 : $100{\Omega}$/ sq., 1741 : $10K{\Omega}$/sq.) were investigated using by impedance analyzer. In case of lower resistivity 1721 system, the complex impedance was composed nearly R component for all speciman sintered at above $600^{\circ}C$, and the frequency dependancy on impedance was not affected very much up to 5MHz and again gradually increase with increasing the frequency. In case of higher resistivity 1741 resistor system, impedance properties were very depandant on sintering temperature. When sintering temperature was $600^{\circ}C$, the complex impedance plot shows a vertical line, which correspond to lone capacitance equivalant circuit, and the impedance linearly decreased with increasing frequency. In case of speciman sintered at $700-900^{\circ}C$, the complex impedance plot shows semi-circular are correspond to a lumped RC combination, and the impedance shows constant value to 5MHz, again decreased with increasing frequency. But the complex impedance behavior of speciman sintered at $1000^{\circ}C$ was shows the equivalent circuit correspont to parallel combined LCR component, and the impedance was not varied with frequency.

• Journal of electromagnetic engineering and science
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• v.4 no.1
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• pp.30-36
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• 2004

We determined equivalent circuit parameters of a 1.5 cell S-band RF gun cavity from the resonant characteristics of its decoupled cavities(half cell and full cell) using the code SUPERFISH. Equivalent circuit parameters of the 1.5 cell RF gun cavity resonated in the 0-mode were obtained easily from the circuit parameters of each decoupled cavities. In order to obtain equivalent circuit parameters for the $\pi$ -mode cavity, we calculated the differences of the resonant frequencies and the equivalent resistances between the 0- and $\pi$ -modes with slight variations of the radius and thickness of the coupling iris. From those differences, we obtained R/Q value and equivalent resistance of the $\pi$ -mode, which are directly related to the equivalent circuit parameters of the coupled cavity. Using calculated R/Q value, we can express equivalent inductance, capacitance and resistances of the RF gun cavity resonated in the $\pi$ -mode, which can be useful for analyzing coupled cavities in a steady state.