• Title/Summary/Keyword: calibration circuit

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Chip Implementation of 830-Mb/s/pin Transceiver for LPDDR2 Memory Controller (LPDDR2 메모리 컨트롤러를 위한 830-Mb/s/pin 송수신기 칩 구현)

  • Jong-Hyeok, Lee;Chang-Min, Song;Young-Chan, Jang
    • Journal of IKEEE
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    • v.26 no.4
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    • pp.659-670
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    • 2022
  • An 830-Mb/s/pin transceiver for a controller supporting ×32 LPDDR2 memory is designed. The transmitter consists of eight unit circuits has an impedance in the range of 34Ω ∽ 240Ω, and its impedance is controlled by an impedance correction circuit. The transmitted DQS signal has a phase shifted by 90° compared to the DQ signals. In the receive operation, the read time calibration is performed by per-pin skew calibration and clock-domain crossing within a byte. The implemented transceiver for the LPDDR2 memory controller is designed by using a 55-nm process using a 1.2V supply voltage and has a maximum signal transmission rate of 830 Mb/s/pin. The area and power consumption of each lane are 0.664 mm2 and 22.3 mW, respectively.

Read-Out Integrated Circuit of Colorimetry-Based Optical Sensor for Eutrophication Analysis (수생태계 부영양화 분석을 위한 비색법 기반의 광학식 센서 신호처리회로(ROIC)구현)

  • Koo, Seong Mo;Jung, Dong Geon;Choi, Young Chan;Kim, Kyung-Kyoo;Kong, Seong Ho
    • Journal of Sensor Science and Technology
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    • v.29 no.4
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    • pp.270-274
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    • 2020
  • In this study, a read-out integrated circuit (ROIC) that can be applied to a colorimetry-based optical sensor for analyzing total phosphorus and total nitrogen was developed and characterized. The proposed ROIC minimizes the effect on temperature fluctuation, improves sensitivity, and extends the dynamic range by utilizing a dual optical path and feedback control circuit. Using a dual optical path makes it possible to calibrate the output signal of the optical sensor automatically, along with the temperature fluctuation. The calibrated voltage is fed back into the measurement stage; thus, the output current of the measurement is adaptively controlled. As a result, the sensitivity and dynamic range of the proposed ROIC are improved. Finally, a total-phosphorus analysis was conducted by utilizing the ROIC. The ROIC was found to operate stably over a wide temperature range.

Parameter Identification of 3R-C Equivalent Circuit Model Based on Full Life Cycle Database

  • Che, Yanbo;Jia, Jingjing;Yang, Yuexin;Wang, Shaohui;He, Wei
    • Journal of Electrical Engineering and Technology
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    • v.13 no.4
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    • pp.1759-1768
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    • 2018
  • The energy density, power density and ohm resistance of battery change significantly as results of battery aging, which lead to decrease in the accuracy of the equivalent model. A parameter identification method of the equivale6nt circuit model with 3 R-C branches based on the test database of battery life cycle is proposed in this paper. This database is built on the basis of experiments such as updating of available capacity, charging and discharging tests at different rates and relaxation characteristics tests. It can realize regular update and calibration of key parameters like SOH, so as to ensure the reliability of parameters identified. Taking SOH, SOC and T as independent variables, lookup table method is adopted to set initial value for the parameter matrix. Meanwhile, in order to ensure the validity of the model, the least square method based on variable forgetting factor is adopted for optimizing to complete the identification of equivalent model parameters. By comparing the simulation data with measured data for charging and discharging experiments of Li-ion battery, the effectiveness of the full life cycle database and the model are verified.

Parasitic Elements Analysis and Filter Design for LTCC Multi-Layer Filter (LTCC 적층 필터를 위한 기생 성분 해석 및 필터 설계)

  • Lee, Hye-Sun;Kim, Yu-Seon;Pyo, Hyun-Seong;An, Jae-Min;Lim, Yeong-Seog
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.20 no.8
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    • pp.730-738
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    • 2009
  • In this paper, we present a equivalent circuit considered parasitic elements about LTCC multi-layer BPF structure that was studied previously and a process of extraction of the element value using SOC technique. By applying extracted element values to equivalent circuit, 2th LTCC filter was designed and fabricated that was applied to satellite DMB. The filter was fabricated of Dupont951 substrate with relative permittivity of 7.8, the dimension of the fabricated filter is $2.4{\times}3.8{\times}0.378mm^3$. The measurement results indicate 1.4 dB of insertion loss and 32.3 dB of return loss, which are in good agreement with simulated ones.

Design of 4Kb Poly-Fuse OTP IP for 90nm Process (90nm 공정용 4Kb Poly-Fuse OTP IP 설계)

  • Hyelin Kang;Longhua Li;Dohoon Kim;Soonwoo Kwon;Bushra Mahnoor;Panbong Ha;Younghee Kim
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.16 no.6
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    • pp.509-518
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    • 2023
  • In this paper, we designed a 4Kb poly-fuse OTP IP (Intellectual Property) required for analog circuit trimming and calibration. In order to reduce the BL resistance of the poly-fuse OTP cell, which consists of an NMOS select transistor and a poly-fuse link, the BL stacked metal 2 and metal 3. In order to reduce BL routing resistance, the 4Kb cells are divided into two sub-block cell arrays of 64 rows × 32 rows, with the BL drive circuit located between the two 2Kb sub-block cell arrays, which are split into top and bottom. On the other hand, in this paper, we propose a core circuit for an OTP cell that uses one poly-fuse link to one select transistor. In addition, in the early stages of OTP IP development, we proposed a data sensing circuit that considers the case where the resistance of the unprogrammed poly-fuse can be up to 5kΩ. It also reduces the current flowing through an unprogrammed poly-fuse link in read mode to 138㎂ or less. The poly-fuse OTP cell size designed with DB HiTek 90nm CMOS process is 11.43㎛ × 2.88㎛ (=32.9184㎛2), and the 4Kb poly-fuse OTP IP size is 432.442㎛ × 524.6㎛ (=0.227mm2).

A Wideband ${\Delta}{\Sigma}$ Frequency Synthesizer for T-DMB/DAB/FM Applications in $0.13{\mu}m$ CMOS (T-DMB/DAB/FM 수신기를 위한 광대역 델타시그마 분수분주형 주파수합성기)

  • Shin, Jae-Wook;Shin, Hyun-Chol
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.12
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    • pp.75-82
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    • 2010
  • This paper presents a wideband ${\Delta}{\Sigma}$ fractional-N frequency synthesizer for a multi-band single chip CMOS RFIC transceivers. A wideband VCO utilizes a 6-bit switched capacitor array bank for 2340~3940 MHz frequency range. VCO frequency calibration circuit is designed for optimal capacitor bank code selection before phase locking process. It finishes the calibration process in $2{\mu}s$ over the whole frequency band. The LO generation block has selectable multiple division ratios of ${\div}2$, ${\div}16$, and ${\div}32$ to generate LO I/Q signals for T-DMB/DAB/FM Radio systems in L-Band (1173~1973 MHz), VHF-III (147~246 MHz), VFH-II (74~123 MHz), respectively. The measured integrated phase noise is quite low as it is lower than 0.8 degree RMS over the whole frequency band. Total locking time of the ${\Delta}{\Sigma}$ frequency synthesizer including VCO frequency calibration time is less than $50{\mu}s$. The wideband ${\Delta}{\Sigma}$ fractional-N frequency synthesizer is fabricated in $0.13{\mu}m$ CMOS technology, and it consumes 15.8 mA from 1.2 V DC supply.

Implementation of Single-Phase Energy Measurement IC (단상 에너지 측정용 IC 구현)

  • Lee, Youn-Sung;Seo, Hae-Moon;Kim, Dong Ku
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.40 no.12
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    • pp.2503-2510
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    • 2015
  • This paper presents a single-phase energy measurement IC to measure electric power quantities. The entire IC includes two programmable gain amplifiers (PGAs), two ${\sum}{\Delta}$ modulators, a reference circuit, a low-dropout (LDO) regulator, a temperature sensor, a filter unit, a computation engine, a calibration control unit, registers, and an external interface block. The proposed energy measurement IC is fabricated with $0.18-{\mu}m$ CMOS technology and housed in a 32-pin quad-flat no-leads (QFN) package. It operates at a clock speed of 4,096 kHz and consumes 10 mW in 3.3 V supply.

Ramp Load/Unload Velocity Control of VCM Using BEMF in HDD (램프 로드/언로드 하드디스크 드라이브의 역기전력을 이용한 VCM 속도제어)

  • Jeong, Jun;Kim, Tae-Soo;Kang, Tae-Sik;Jung, Kwang-Jo;Lee, Chul-Woo
    • Transactions of the Korean Society for Noise and Vibration Engineering
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    • v.16 no.1 s.106
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    • pp.50-56
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    • 2006
  • Since most of small form-factor drives have a load/unload mechanism and the flying height of the head is getting lower as the capacity of disk drives increases, the load/unload velocity becomes one of the important factors to ensure the reliability of the load/unload mechanism. To control the load/unload velocity accurately, velocity sensing is essential. In this paper, we introduce a very practical method that acquires the load/unload velocity from the back electromotive force (BEMF) of a voice coil motor (VCM) and propose a calibration method for measuring the BEMF from a given circuit. Moreover, the effect of calibration error and temperature variation on the measurement of BEMF is shown by simulation. Then, this present method is applied to the load/unload velocity controller and is verified from the experimental result.

Disposable Solid-State pH Sensor Using Nanoporous Platinum and Copolyelectrolytic Junction

  • Noh, Jong-Min;Park, Se-Jin;Kim, Hee-Chan;Chung, Taek-Dong
    • Bulletin of the Korean Chemical Society
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    • v.31 no.11
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    • pp.3128-3132
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    • 2010
  • A disposable solid-state pH sensor was realized by utilizing two nanoporous Pt (npPt) electrodes and a copolyelectrolytic junction. One nanoporous Pt electrode was to measure the pH as an indicating electrode (pH-IE) and the other assembled with copolyelectrolytic junction was to maintain constant open circuit potential ($E_{oc}$) as a solid-state reference electrode (SSRE). The copolyelectrolytic junction was composed of cationic and anionic polymers immobilized by photo-polymerization of N,N'-methylenebisacrylamide, making buffered electrolytic environment on the SSRE. It was expected to make. The nanoporous Pt surrounded by a constant pH excellently worked as a solid state reference electrode so as to stabilize the system within 30 s and retain the electrochemical environment regardless of unknown sample solutions. Combination between the SSRE and the pH-IE commonly based on nanoporous Pt yielded a complete solid-state pH sensor that requires no internal filling solution. The solid state pH sensing chip is simple and easy to fabricate so that it could be practically used for disposable purposes. Moreover, the solid-state pH sensor successfully functions in calibration-free mode in a variety of buffers and surfactant samples.

Design and fabrication of an optimized Rogowski coil for plasma current sensing and the operation confidence of Alvand tokamak

  • Eydan, Anna;Shirani, Babak;Sadeghi, Yahya;Asgarian, Mohammad Ali;Noori, Ehsanollah
    • Nuclear Engineering and Technology
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    • v.52 no.11
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    • pp.2535-2542
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    • 2020
  • To understand the fundamental parameters of Alvand tokamak, A Rogowski coil with an active integrator was designed and constructed. Considering the characteristics of the Alvand tokamak, the structural and electrical parameters affecting the sensor function, were designed. Calibration was performed directly in the presence of plasma. The sensor has a high resistance against interference of external magnetic fields. Plasma current was measured in various experiments. Based on the plasma current profile and loop voltage signal, the time evolution of plasma discharge was investigated and plasma behavior was analyzed. Alvand tokamak discharge was divided into several regions that represents different physical phenomena in the plasma. During the plasma discharge time, plasma had significant changes and its characteristic was not uniform. To understand the plasma behavior in each of the phases, the Rogowski sensor should have sufficient time resolution. The Rogowski sensor with a frequency up to 15 kHz was appropriate for this purpose.