• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.671-674
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• 2004

BSCCO thin films have been fabricated by epitaxy growth at an ultra-low growth rate. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 820 $^{\circ}C$ and the highly condensed ozone gas pressure(PO3) in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and 795 $^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785\;^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

• Progress in Superconductivity
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• 제3권2호
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• pp.135-139
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• 2002

We have fabricated high-quality c-axis-oriented $MgB_2$ thin films by using a pulsed laser deposition technique. The thin films grown on (1 1 0 2) $Al_2$$O_3$ substrates show an onset transition temperature of 39.2 K with a sharp transition width of ~0.15 K. X-ray diffraction patterns indicate a c-axis-oriented crystal structure perpendicular to the substrate surface. We observed high critical current densities ($J_{c}$) of ~ 16 $MA/\textrm{cm}^2$ at 15 K and under self-field, which is comparable to or exceeds those of cuprate high-temperature superconductors. The extrapolation $J_{c}$ at 5 K was estimated to be ~ 40 MA/$\textrm{cm}^2$, which is the highest record for $MgB_2$ compounds. At a magnetic field of 5 T, the $J_{c}$ of~ 0.1 $MA/\textrm{cm}^2$ was detected at 15 K, suggesting that this compound is very promising candidate for the practical applications at high temperature with lower power consumption. As a possible explanation for the high current-carving capability, the vortex-glass phase will be discussed.d.d.d.

• 한국결정학회지
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• 제4권2호
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• pp.92-99
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• 1993

Diethylzinc를 사용하여 PECVD장치로 ZnO 박막을 증 착하여 미세구조를 분석하였다. 기판 온도 100℃에서부터 이미 미세 결정 입자로 구성된 ZnO 박막의 증착이 가능했으며, 200℃이상에서는 C 축 배향성이 뛰어난 ZnO 박막이 유리 기판위에 증착되었다. c-면 사파이어 기판위에 증착된 ZnO 박막을 TEM으로 분석한 결과 기판 온도 350℃에서 EPITAXIAL (002) ZnO 박막이 성장됐으며, 입계에서는 Moire패턴에 의한 dislocation이 관찰되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.463-466
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• 2001

This detailed study of electrical, crystallographic and optical properties in Al doped ZnO thin films prepared by Facing Targets Sputtering(FTS), where strong internal magnets were contained in target holders to confine the plasma between the targets is described. Optimal transmittance and resistivity was obtained by controlling flow ratio of O$_2$gas. When the O$_2$ gas ratio of 0.25 and substrate temperature R.T., ZnO:Al thin film deposited had strongly oriented c-axis and the lower resistivity ( <10$\^$-4/ $\Omega$cm). The optical transmittance was above 80% in visible range.

• 한국전기전자재료학회논문지
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• 제14권10호
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• pp.855-860
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• 2001

Bi$_2$Sr$_2$CuO$_{x}$(Bi-2201) thin film were fabricated by atomic layer-by -layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed oxygen were used with ultraviolet light irradiation to assist oxidation. XRD and RHEED investigations revealed that a buffer layer is formed at the early stage of deposition (less than 10 unit cell), and then c-axis oriented Bi-2201 grows on top of it.t.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.486-489
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• 2002

Temperature(T) dependence of the sheet resistance( $R_{$\square$}$) has been investigated on the c-axis oriented thin films of the (Bi2212/Bi2201) mixed crystal with different molar fractions. The $R_{$\square$}$-T superconducting characteristic deteriorated with reduction of the Bi2212 fraction, and almost disappears at 48 mol% where a superconductor-to-insulator transition took place, with the resistance on the normal state, RN, reaching 4.l㏀ at 80 K. This $R_{N}$ value is close to the universal quantum number, h/(2e)$^2$≡6.5㏀ predicted by the Kosterlitz-Thouless(KT) transition theory. The $R_{$\square$}$-T characteristics of the 48 mol% thin film can be elucidated as a competitive process of KT transition brought about by charge or vortex in the two-dimensional layer structure.e.

• Transactions on Electrical and Electronic Materials
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• 제3권2호
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• pp.20-23
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• 2002

Temperature (T) dependence of the sheet resistance (R$\_$$\square$/) has been investigated an the c-axis oriented thin films of the (Bi2212/Bi2201) mixed crystal with different molar fractions. The R$\_$$\square$/-T superconducting characteristic deteriorated with reduction of the Bi2212 fraction, and almost disappears at 48 mol% where a superconductor-to-insulator transition too k place, with the resistance on the normal state, R$\_$N/, reaching 4.1 kΩka at 80 K. This R$\_$$\square$/ value is close to the universal quantum number, h/(2e)$_2$≡ 6.5 kΩ predicted by the Kosterlitz-Thouless (KT) transition theory. The R$\_$$\square$/-T characteristics of the 48 mol% thin film can be elucidated as a competitive process of KT transition brought about by charge or vortex in the two-dimensional layer structure.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.77-77
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• 2000

Titanium oxide (TiO2) thin films have valuable properties such as a high refractive index, excellent transmittance in the visible and near-IR frequency, and high chemical stability. Therefore it is extensively used in anti-reflection coating, sensor, and photocatalysis as electrical and optical applications. Specially, TiO2 have a high dielectric constant of 180 along the c axis and 90 along the a axis, so it is highlighted in fabricating dielectric capacitors in micro electronic devices. A variety of methods have been used to produce patterned self-assembled monolayers (SAMs), including microcontact printing ($\mu$CP), UV-photolithotgraphy, e-beam lithography, scanned-probe based micro-machining, and atom-lithography. Above all, thin film fabrication on $\mu$CP modified surface is a potentially low-cost, high-throughput method, because it does not require expensive photolithographic equipment, and it produce micrometer scale patterns in thin film materials. The patterned SAMs were used as thin resists, to transfer patterns onto thin films either by chemical etching or by selective deposition. In this study, we deposited TiO2 thin films on Si (1000 substrateds using titanium (IV) isopropoxide ([Ti(O(C3H7)4)] ; TIP as a single molecular precursor at deposition temperature in the range of 300-$700^{\circ}C$ without any carrier and bubbler gas. Crack-free, highly oriented TiO2 polycrystalline thin films with anatase phase and stoichimetric ratio of Ti and O were successfully deposited on Si(100) at temperature as low as 50$0^{\circ}C$. XRD and TED data showed that below 50$0^{\circ}C$, the TiO2 thin films were dominantly grown on Si(100) surfaces in the [211] direction, whereas with increasing the deposition temperature to $700^{\circ}C$, the main films growth direction was changed to be [200]. Two distinct growth behaviors were observed from the Arhenius plots. In addition to deposition of THe TiO2 thin films on Si(100) substrates, patterning of TiO2 thin films was also performed at grown temperature in the range of 300-50$0^{\circ}C$ by MOCVD onto the Si(100) substrates of which surface was modified by organic thin film template. The organic thin film of SAm is obtained by the $\mu$CP method. Alpha-step profile and optical microscope images showed that the boundaries between SAMs areas and selectively deposited TiO2 thin film areas are very definite and sharp. Capacitance - Voltage measurements made on TiO2 films gave a dielectric constant of 29, suggesting a possibility of electronic material applications.

• 한국전기전자재료학회논문지
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• 제18권2호
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• pp.159-163
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• 2005

This paper gives characterization of ZnO thin film deposited by RF magnetron sputtering method, which is concerned in deposition process and device fabrication process, to fabricate solidly mounted resonator(SMR)-type film bulk acoustic resonator(FBAR). A piezoelectric layer of 1.1${\mu}{\textrm}{m}$ thick ZnO thin films were grown on thermally oxidized SiO$_2$(3000 $\AA$)/Si substrate layers by RF magnetron sputtering at the room temperature. The highly c-axis oriented ZnO thin film was obtained at the conditions of 265 W of RF power, 10 mtorr of working pressure, and 50/50 of Ar/O$_2$ gas ratio. The piezoelectric-active area was 50 ${\mu}{\textrm}{m}$${\times}$50${\mu}{\textrm}{m}$, and the thickness of ZnO film and Al-3 % Cu electrode were 1.4 ${\mu}{\textrm}{m}$ and 180${\mu}{\textrm}{m}$, respectively. Its series and parallel frequencies appeared at 2.128 and 2.151 GHz, respectively, and the qualify factor of the resonator was as high as 401.8$\pm$8.5.

• 한국결정성장학회지
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• 제14권4호
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• pp.145-150
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• 2004

We have investigated the structural, electrical and optical properties of Al-doped ZnO (AZO) thin films grown on glass substrate by pulsed DC magnetron sputtering as functions of pulse frequency and substrate temperature. A highly c-axis oriented AZO thin film is grown in perpendicular to the substrate when pulse frequency of 30 kHz and substrate temperature of $400^{\circ}C$ was applied. Under this optimized growth condition, the resistivity of AZO thin films exhibited $7.40\times 10^{-4}\Omega \textrm{cm}$. This indicated that the decrease of film resistivity resulted from the improvement of film crystallinity. The optical transmittance spectra of the films showed a very high transmittance of 85∼90 % in the visible wavelength region and exhibited the absorption edge of about 350 nm. The results show the potential application for transparent conductivity oxide (TCO) thin films.