Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Sl Transitions in BSCCO Mixed Crystal Thin Films

  • Ahn, Joon-Ho (Department of Electrical Engineering, Kwangwoon University) ;
  • Yi, Keon-Young (Department of Electrical Engineering, Kwangwoon University) ;
  • Park, Yong-Pil (Department of Electrical and Electronic Engineering, Dongshin University)
  • Published : 2002.06.01
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Abstract

Temperature (T) dependence of the sheet resistance (R$\_$$\square$/) has been investigated an the c-axis oriented thin films of the (Bi2212/Bi2201) mixed crystal with different molar fractions. The R$\_$$\square$/-T superconducting characteristic deteriorated with reduction of the Bi2212 fraction, and almost disappears at 48 mol% where a superconductor-to-insulator transition too k place, with the resistance on the normal state, R$\_$N/, reaching 4.1 kΩka at 80 K. This R$\_$$\square$/ value is close to the universal quantum number, h/(2e)$_2$≡ 6.5 kΩ predicted by the Kosterlitz-Thouless (KT) transition theory. The R$\_$$\square$/-T characteristics of the 48 mol% thin film can be elucidated as a competitive process of KT transition brought about by charge or vortex in the two-dimensional layer structure.

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References

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