• Journal of the Korean institute of surface engineering
• /
• v.39 no.3
• /
• pp.87-92
• /
• 2006

The characteristic of interface layer and the effect of bias voltage on the microstructure of c-BN films were studied in the microwave plasma hot filament C.V.D process. c-BN films were deposited on a high speed steel(SKH-51) substrate by hot filament CVD technique assisted with a microwave plasma to develop a high performance of resistance coating tool. c-BN films were obtained at a gas pressure of 20 Torr, vias voltage of 300 V and substrate temperature of $800^{\circ}C$ in $B_2H_6-NH_3-H_2$ gas system. It was found that a thin layer of hexagonal boron nitride(h-BN) phase exists at the interface between c-BN layer and substrate.

• Journal of the Korean institute of surface engineering
• /
• v.29 no.2
• /
• pp.93-99
• /
• 1996

In this work BN thin films were deposited on Si substrate by R. F. sputtering method at $200^{\circ}C$ and in Ar + $N_2$ mixed gas atmosphere. In order to investigate the effect of ion bombardment on substrate for c-BN bonding, substrate bias voltage was applied. The optimum substrate bias voltage for c-BN bonding was determined by FTIR analysis on specimens which were deposited with various bias voltages. Then BN thin film was deposited with this optimum condition and its phase, morphology, chemical composition, and refractive index were compared with those of BN film which was deposited without bias voltage. FTIR results showed that BN films deposited with substrate bias voltage were composed of mixed phases of c-BN and h-BN, while those deposited without bias voltage were h-BN only. When pure Ar gas was used for sputtering gas, BN films were delaminated easily from substrate in air, while when 10% $N_2$ gas was added to the sputtering gas, although c-BN specific infrared peak was reduced, delamination did not occur. GXRD and TEM results showed that BN films were amorphous phases regardless of substrate bias voltage, and AES results showed that the chemical compositions of B/N were about 1.7~1.8. The refractive index of BN film deposited with bias voltage was higher than that without bias voltage. The reason is believed to be the existence of c-BN bonding in BN film and the higher density of film that deposited with the substrate bias voltage.

• Journal of the Korean Vacuum Society
• /
• v.13 no.4
• /
• pp.150-156
• /
• 2004

Boron nitride thin films were deposited on Si(100) substrate by RF (Radio-frequency) UBM (Unbalanced Magnetron) sputtering system. The effect of working pressure and substrate bias voltage on microstructure and compressive stress of boron nitride thin films has been investigated. In high working pressure, the alignment of hBN laminates increased with substrate bias voltage, in low working pressure, however, it was high in low substrate bias voltage. Compressive stress evolution and surface morphology of deposited BN films are closely related with the alignment of hBN laminates. The cBN phase without high compressive stress could be nucleated on hBN thin film by controlling the alignment of hBN laminates.

• Journal of the Korean Vacuum Society
• /
• v.9 no.2
• /
• pp.155-161
• /
• 2000

BN films composed of c-BN(70%) and h-BN(30%) phases have been synthesized by the ion beam assisted deposition (IBAD) process and stabilized by post-annealing. Boron was e-beam evaporated at 1.2 $\AA$/sec and nitrogen was ionized and accelerated at about 100 eV by the end-hall type ion gun. Substrates were negatively biased by DC 400 and 500 V, respectively, and heated at $700^{\circ}C$. Synthesized BN films were in-situ post-annealed at 700 or $800^{\circ}C$, respectively, for 1 hr without breaking vacuum. BN films without post-annealing were peeled off from substrates immediately when they were exposed to the air while those with post-annealing at $800^{\circ}C$ were stabilized. Post annealing reduced the film stress from 4.9 GPa to 3.4 GPa, but no considerable stress release in the c-BN phase was observed, contrary to previous reports that the stress relaxation in the c-BN phase is the main mechanism for the stabilization. Structural and chemical relaxation of non c-BN phase is supposed to be responsible for the film stress reduction and, in turn, stabilization, especially when the c-Bn content of the film is not high.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.61 no.1
• /
• pp.89-93
• /
• 2012

c-BN films were deposited on SKH-51 steels by electron assisted hot filament CVD method and microstructure development was studied processing parameters such as bias voltage, temperature, etching and phase transformation at boundary layer between BN compound and steel to develop a high performance wear resistance tools. A negative bias voltage higher than 200V at substrate temperature of $800^{\circ}C$ and gas pressure of 20 torr in B2H6-NH3-H2 gas system was one of optimum conditions to produce c-BN films on the SKH-51 steels. Thin layer of hexagonal boron nitride phase was observed at the interface between c-BN layer and substrate.

• Journal of Microbiology and Biotechnology
• /
• v.17 no.8
• /
• pp.1284-1290
• /
• 2007

This study was conducted to investigate the antibacterial activity and shelf-life extension effect of iceberg lettuce packed in BN/PE film. The BN/PE film has a strong microbial suppression effect on pathogenic bacteria such as Escherichia coli, Salmonella enteritidis, and S. typhimurium. The number of psychrophiles and mesophiles during 5 days of cold storage of fresh-cut iceberg lettuce at $10^{\circ}C$ packaged in BN/PE film was strictly suppressed in comparison with other tested films (OPP, PE, and PET film). When fresh processed iceberg lettuce was processed and stored under the current conditions, the shelf-life of the product was longer than 5 days in the BN/PE film package, whereas the shelf-life when using the other films tested, PE, OPP and PET, was no longer than 3-4 days. The decay rates of the iceberg lettuce packed in the BN/PE film was maintained at $29.8{\pm}2.1%$ on the 5th day of preservation. The samples packed in BN/PE film maintained an excellent visual quality during the 3 days of storage without significant differences in comparison with the initial visual quality. No browning was observed in the samples packed in BN/PE film for up to 3 days. The texture of shredded iceberg lettuce packaged in BN/PE film remained unchanged up to 3 days, and then a moderate decrease in texture was observed after 4 days of storage. In addition, the overall acceptability of fresh-cut iceberg lettuce packaged in BN/PE film did not change for up to 3 days, whereas the samples packaged in the other films were inedible by 3 days of storage. In conclusion, the shelf-life of fresh-cut iceberg lettuce packaged in the BN/PE film was extended to more than 5 days at $10^{\circ}C$, whereas that in the other films was 2 days at $10^{\circ}C$. Therefore, the shelf-life extension effect of the fresh-cut iceberg lettuce in BN/PE film packaging was very effective compared with the other films tested.

• The Korean Journal of Ceramics
• /
• v.6 no.2
• /
• pp.129-133
• /
• 2000

Boron nitride films were synthesized with $N_2$ion flux of low energy, up to 100 eV, at different substrate temperatures of no heating, 200, 400, 500, and $800^{\circ}C$, respectively. Boron was supplied by e-beam evaporation at the rate of $1.5\AA$/sec. For all the conditions, hexagonal BN (h-BN) phase was mainly synthesized and high resolution transmission electron microscopy (HRTEM) showed that (002) planes of h-BN phase were aligned vertical to the Si substrate. The maximum alignment occurred around $400^{\circ}C$. In addition to major h-BN phase, transmission electron diffraction (TED) rings identified the formation of cubic BN (c-BN) phase. But HRTEM showed no distinct and continuous c-BN layer. These results suggest that c-BN phase may form in a scattered form even when h-BN phase is mainly synthesized under small momentum transfer by bombarding ions, which are not reconciled with the macro compressive stress model for the c-BN formation.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1998.02a
• /
• pp.120-120
• /
• 1998

Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.

• Journal of Ceramic Processing Research
• /
• v.17 no.7
• /
• pp.763-767
• /
• 2016

The structural characterization of cubic boron nitride (c-BN) thin films was performed using a B4C target in a radio-frequency magnetron sputtering system. The deposition processing conditions, including the substrate bias voltage, substrate temperature, and base pressure were varied. Fourier-transform infrared spectroscopy and X-ray photoelectron spectroscopy were used to analyze the crystal structures and chemical binding energy of the films. For the BN film deposited at room temperature, c-BN was formed in the substrate bias voltage range of -400 V to -600 V. Less c-BN fraction was observed as the deposition temperature increased, and more c-BN fraction was observed as the base pressure increased.

• Journal of the Korean institute of surface engineering
• /
• v.32 no.3
• /
• pp.467-471
• /
• 1999

BN films were grown on silicon (l00) substrate by magnetically enhanced activated reactive evaporation (ME-ARE) with pulsed DC power instead of r.f. for substrate biasing. The deposited films were analyzed using Fourier transform infrared spectroscopy (FTIR) and transmission electron microscopy (TEM). FTIR results show that the intensity of absorption band of $sp^2$ bond of BN decreased and that of $sp^3$ bond of c-BN increased with increasing pulsed DC bias voltage applied to substrate. The initially grown layer at the interface was observed by TEM and considered to be of$ sp^2$-bonded BN. The cross-sectional and planar TEM micrographs show that the upper layer on the initial layer was the single phase c-BN. It is concluded that cubic boron nitride films could be synthesized by ME-ARE process with pulsed DC biasing.