Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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DEPOSITION OF c-BN FILMS BY PULSED DC BIASING IN MAGNETICALLY ENHANCED ARE METHOD

  • Lee, S.H. (Korea Institute of Machinery & Materials) ;
  • Byon, E.S. (Korea Institute of Machinery & Materials) ;
  • Lee, K.H. (Korea Institute of Machinery & Materials) ;
  • J., Tian (Harbin Institute of Technology) ;
  • Yoon, J.H. (Changwon National University) ;
  • Sung, C. (Center for Advanced Materials,University of Massachusetts,Lowell,MA 01854,U.S.A) ;
  • Lee, S.R.
  • Published : 1999.06.01
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Abstract

BN films were grown on silicon (l00) substrate by magnetically enhanced activated reactive evaporation (ME-ARE) with pulsed DC power instead of r.f. for substrate biasing. The deposited films were analyzed using Fourier transform infrared spectroscopy (FTIR) and transmission electron microscopy (TEM). FTIR results show that the intensity of absorption band of $sp^2$ bond of BN decreased and that of $sp^3$ bond of c-BN increased with increasing pulsed DC bias voltage applied to substrate. The initially grown layer at the interface was observed by TEM and considered to be of$ sp^2$-bonded BN. The cross-sectional and planar TEM micrographs show that the upper layer on the initial layer was the single phase c-BN. It is concluded that cubic boron nitride films could be synthesized by ME-ARE process with pulsed DC biasing.

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