• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.116-116
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• 2013

(Ni-22Cr-10Al-1Y)와 ($ZrO_2-25CeO_2-2.5Y_2O_3$)로 구성되는 금속/세라믹 복합코팅을 대기용사(ASP; air plasma spay)으로 철 기판위에 1:3, 2:2, 3:1의 무게비로 혼합하여 제조하였다. 용사된 코팅은 금속이영지역과 세라믹잉여지역으로 구별되고, 용사중에 NiCrAlY중의 Al이 선택적으로 산화되어 Al2O3가 계면에 존재하였다. 복합코팅은 $NaCl-Na_2SO_4$ 용융염에서 $800{\sim}900^{\circ}C$, 50시간 동안 부식실험을 실시하였다. 부식생성물은 NiO, $Cr_2O_3$, ${\alpha}-Al_2O_3$가 생성되는데, 부식이 진행되면서 용해되었다. 용융염 부식이 진행되는 동안에 Cr, Al이 외방확산하였고, Na, Cl, S는 내부로 확산되었다. 시간 및 온도뿐만 아니라 금속의 양이 증가할수록 코팅의 내식성은 저하되었다.

• Journal of Sensor Science and Technology
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• v.5 no.5
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• pp.79-84
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• 1996

A $1\;{\mu}m$ thick n-type GaAs layer with Si doping density of $1{\times}10^{17}/cm^{3}$ and a $500{\AA}$ thick undoped single crystalline AlAs layer were subsequently grown by molecular beam epitaxy on the $n^{+}$ GaAs substrate. The AlAs/GaAs layer was oxidized in $N_{2}$ bubbled $H_{2}O$ vapor($95^{\circ}C$) ambient at $400^{\circ}C$ for 2 and 3 hours. From the result of XPS analysis, small amounts of $As_{2}O_{3}$, AlAs, and elemental As were found in the samples oxidized up to 2 hours. After 3 hours oxidation, however, various oxides related to As were dissolved and As atoms were diffused out toward the oxide surface. The as-grown AlAs/GaAs layer was selectively converted to $Al_{2}O_{3}/GaAs$ at the oxidation temperature $400^{\circ}C$ for 3 hours. The oxidation temperature and time is very critical to stop the oxidation at the AlAs/GaAs interface and to form a defect-free surface layer.

• Journal of the Korean Ceramic Society
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• v.36 no.3
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• pp.231-236
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• 1999

냉각속도가 재열처리가 AFD 방법에 의해 제작된 76SiO2-14B2O3-6Na2O-4Al2O3 유리박막의 광학적 특성에 미치는 영향을 조사하였다. 유리박막의 열팽창계수는 30$0^{\circ}C$부터 전이온도 사이에서 약 5$\times$10-6/$^{\circ}C$이었으며, 전이온도는 62$0^{\circ}C$였다. 유리박막을 전이온도 이하에서 열처리할 경우 열처리 시간이 증가함에 따라 굴절률은 증가하였으며, 열처리 온도가 증가함에 따라 굴절률의 증가속도는 더 컸다. 열처리온도에 따른 유리박막의 복굴절(TE-TM)감소는 굴절률이 가장 크게 증가하는 온도인 $600^{\circ}C$에서 가장 효과적이다. 한편, 냉각속도가 증가함에 따라 유리박막의 두께는 증가하였으며, 굴절류른 감소하였다.

• Journal of the Korean Ceramic Society
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• v.42 no.8 s.279
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• pp.561-566
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• 2005

For the homogeneous dispersion of $ZrO_2$ particles in $Al_2O_3/ZrO_2$ceramics, Zr-precusors were mixed with oxide $Al_2O_3$powders by chemical routes such as partial precipitation or partial polymerization of Zr-nitrate solutions. In case of the mechanical mixing of ultrafine $Al_2O_3$ and $ZrO_2$ oxide powders, relatively homogeneous dispersion was difficult to achieve so that the particle size and distributions of $ZrO_2$ were relatively inhomogeneous after sintering at high temperature. But when the Zr-Y-hydroxide were co-precipitated to ultrafine $Al_2O_3$ oxide powders followed by calcinations, homogeneous dispersion of nano-sized $ZrO_2$ particles in $Al_2O_3/ZrO_2$ composite ceramics were obtained. But because of the coalescence of dispersed $ZrO_2$ particles, dispersed $ZrO_2$ was grown up to more than 0.2${mu}m$ (200 nm) when sintered at the temperature of higher than $1500^{\circ}C$ But when the sintering temperature was kept to lower than $1400^{\circ}C$ by using nano-sized $\alpha-alumina$, the particle size of dispersed $ZrO_2$ could be sustained below 0.1 ${\mu}m$. But the coalescence of dispersed $ZrO_2$ between $Al_2O_3$ particles could not be avoided so that the mechanical properties were not enhanced contrary to the expectations. So Zr-polyester precursors were precipitated and coated to the surface of ultrafine $\alpha-alumina$ powders by the polymerization of Ethylene Glycol with Citric Acid and Zirconium Nitrate. By this dispersion much more uniform dispersion of $ZrO_2$ was achieved at $1450\~1600^{\circ}C$ of sintering temperature ranges. And due to especially discrete dispersion of $ZrO_2$ between $Al_2O_3$ particles, their mechanical strength was more enhanced than mechanical mixing or hydroxide precipitation methods.

• Electrical & Electronic Materials
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• v.10 no.2
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• pp.166-171
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• 1997

The photomachinable glass-ceramics of Ag and CeO$_{2}$ added to Li$_{2}$O-Al$_{2}$O$_{3}$-SiO$_{2}$-K$_{2}$O glass system was investigated as a function of UV irradiation time. The temperature of optimum nucleation and crystal growth temperature were confirmed at 525.deg. C, 630.deg. C respectively using DTA and TMA. The phases of Li$_{2}$O.SiO$_{2}$ habit were lath-like and/or dendrite type and [002] direction of Li$_{2}$O.SiO$_{2}$ / Li$_{2}$O.2SiO$_{2}$ phases were changed according to the UV irradiation time by 400 W, 362 nm UV light source. Under that condition, the optimum UV irradiation time was 5 min.

• Journal of environmental and Sanitary engineering
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• v.15 no.1
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• pp.62-68
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• 2000

This study was investigated to the recovery of alumina from the first calcined waste pottery using alkaline sintering. This study was based on calcination result of a commercial ${\alpha}-Al2_O_3$ with NaOH powder. $NaAlO_2$ was formed by calcination of ${\alpha}-Al_2O_3$ with NaOH and conversion of $NaAlO_2$ from ${\alpha}-Al_2O_3$ was 91.4% at calcination condition ; weight ritio of $NaOH/{\alpha}-Al2_O_3$ 1.5, $800^{\circ}C$, and 90min. The first calcined waste porrery from the manufacturing Procedure of H Ltd. was grinded to 170/270mesh by a ball mill and calcined over $500^{\circ}C$ with NaOH powder. The calcined sample was dissolved in $25^{\circ}C$ water and sodiumaluminosilicate solid was formed. After filtration, the contained aluminum was leached out by dissolving sodiumaluminosilicate solid in 1N HCl. We estimated the efficiency of Al extraction from waste pottery by ICP analysis and NaOH was added to the filtrate and then aluminum compound was precipitated with $Al(OH)_3$ and recovered. The investigation was carried out with the variables ; the calcination temperature($500-900^{\circ}C$), the calcination time(30~90min), and the weight ratio of NaOH/waste pottery(0.5~1.5). The treatment efficiency of the waste pottery and the recovery of Al as 97.9%, 91.9% were obtained under the optimum conditions as followed ; the weight ratio of NaOH/waste pottery was 1.5 and the calcination conditions were $900^{\circ}C$ and 60min.

• Journal of the Korean institute of surface engineering
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• v.26 no.5
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• pp.235-244
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• 1993

The oxidation behavior of a two-phase(Ti3Al+TiAl) intermetallic compound, Ti-33.8wt%Al, has been in-vestigated in air at 800, 900 and $^1000{\circ}C$. Though the isothermal oxidation behavior followed a parabolic law up to 100$0^{\circ}C$ indicating that protective oxide scales were formed, the cyclic oxidation behavior followed a lin-ear law in the entire temperature range tested because flaky or stratified scales were usually spalled from the surface during cooling. During oxidation at 80$0^{\circ}C$, the alloy showed excellent oxidation resistance because continuous protective Al2O3 films were formed on the outermost surface of the alloy. However, above $900^{\circ}C$, the oxidation resistance of the alloy was decreased gradually because relatively non-protective TiO2 scales as well as some of Al2O3 scales were formed on the outer oxide scale. The oxidation mechanism of the alloy at different temperature was proposed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.272-273
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• 2006

LTCC(low temperature co-fired ceramics)용 glass/ceramic 복합체를 제조하기 위해 4 종류의 borosilicate계 glass를 선정하고 filler로 $Al_2O_3$ ceramics를 filler 사용하여 30~50 vol% glass frit에 따른 소결 및 유전 특성에 대하여 조사하였다. Glass frit은 $SiO_2$와 $B_2O_3$ 함량비를 고정한 후 R(CaO, BaO, ZnO, $Bi_2O_3$)에 따라 유리 연화온도(Ts)와 함량이 소결에 미치는 영향 및 유전 특성 변화를 고찰한 결과, CaO-$B_2O_3-SiO_2$ glass의 경우 다량의 2 차상이 형성되었고, 이에 $900^{\circ}C$ 이하에서 완전 소결이 이루어지지 않았으며, BaO-$B_2O_3-SiO_2$ glass는 celsian($BaAl_2Si_2O_8$) 결정이 형성되면서 소결성의 저하를 갖고 왔으며, ZnO-$B_2O_3-SiO_2$ glass는 소결이 진행됨에 따라 주상이 $Al_2O_3$에서 gahnite($ZnAl_2O_4$) 결정이 형성되면서 품질계수가 크게 증가하였으며, $Bi_2O_3-B_2O_3-SiO_2$ glass는 45 vol%일 때 $900^{\circ}C$에서부터 일정한 선수축율 특성을 나타내었지만, 다량의 액상으로 인하여 유전 특성의 저하를 나타내었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.408-409
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• 2007

Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ by RF magnetron sputtering. Target was ZnO ceramic mixed with 2wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}\;to\;4.04{\times}10^{18}cm^{-3}$, mobilities from 0.194 to $2.3cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4{\Omega}cm$. P-type sample has density of $5.40cm^{-3}$ which is smaller than theoretically calculated value of $5.67cm^{-3}$. XPS spectra show that O1s has O-O and Zn-O structures and A12p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.807-811
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• 2003

We investigated the electrical characterisitics of T $a_2$ $O_{5}$ (tantalum pentoxide) film and Ti-O/T $a_2$ $O_{5}$ film deposited on $Al_2$ $O_3$based substrate. Ta (tantalum) electrode and $Al_2$ $O_3$ substrate was used for the purpose of simplifying the manufacturing process in IPD's (integrated passive devices). Dielectric materials (T $a_2$ $O_{5}$ and Ti-O/T $a_2$ $O_{5}$ films) deposited on Ta/Ti/A $l_2$ $O_3$ were annealed at 700 $^{\circ}C$ for 60 sec. in vacuum. The XRD results showed that as-deposited T $a_2$ $O_{5}$ film possessed amorphous structure, which was transformed to crystallines by rapid thermal heat treatment. We compared the lnJ- $E^{{\frac}{1}{2}}$, C-V, C-F of both as-deposited and annealed dielectric thin films deposited on Ta bottom electrode. From this results, we concluded that the leakage current could be reduced by introducing Ti-O buffer layer and conduction mechanisms of T $a_2$ $O_{5}$ and Ti-O/T $a_2$ $O_{5}$ could be interpreted appropriately by Schottky emission effect.