• Journal of Power System Engineering
• /
• v.3 no.2
• /
• pp.57-63
• /
• 1999

The fabrication of $Al_2O_3/Al$ composites by pressureless infiltration technique was made to investigate the effects of processing variables such as content of Mg, processing temperature and time on the infiltration behavior of molten Al and microstructure. When the pure Al was infiltrated into mixtures of Mg and $Al_2O_3$ powder, processing temperature required to spontaneous infiltration was decreased and critical processing temperature and Mg content were $700^{\circ}C$ and 3wt% respectively. The content of Mg was found the most powerful variable for infiltration of molten Al. The infiltration ratio increased with Mg content and processing temperature, however the $Al_2O_3/Al$ composites which were fabricated by high Mg content and processing temperature resulted in non uniform dispersion of $Al_2O_3$ particles by excessive interfacial reaction. XRD pattern indicated that $MgAl_2O_4$ and AIN was observed at the interface of $Al_2O_3$ particles and in the Al matrix as reaction products.

• Journal of the Korean Ceramic Society
• /
• v.40 no.9
• /
• pp.909-915
• /
• 2003

Anodic oxide films on aluminum play an important role as a dielectrics in aluminum electrolytic capacitor. In order to obtain the high capacitance, ZrO$_2$ films were coated on aluminum foils by sol-gel method and then, the properties of anodized films were studied. The coating and drying of the films were repeated 4-10 times and annealed at 300～$600^{\circ}C$ and the triple layer of ZrO$_2$/Al-ZrO$_{x}$ /Al$_2$O$_3$ was formed onto aluminum substrates after anodizing of ZrO$_2$/Al film. The thickness of $Al_2$O$_3$ layer was decreased with increasing the annealing temperature due to the densification of ZrO$_2$ film. The ZrO$_2$ films were crystallized even at 30$0^{\circ}C$ and showed nanocrystalline structure. The. capacitance of aluminum foil annealed at low temperature was higher than that at high temperature. The increase of capacitance was due to the high capacitance of ZrO$_2$ film annealed at low temperature. The capacitance of ZrO$_2$ coated aluminum increased about 3 times compared to that without a ZrO$_2$ layer after anodizing to 400 V. From these results, the aluminum foils with composite oxide layers are found to be applicable to the aluminum electrolytic capacitor.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.1
• /
• pp.40-47
• /
• 2014

In this paper, $Al_2O_3$ film deposited by thermal atomic layer deposition (ALD) with diluted $NH_4OH$ instead of $H_2O$ was suggested for passivation layer and anti-reflection (AR) coating of the p-type crystalline Si (c-Si) solar cell application. It was confirmed that the deposition rate and refractive index of $Al_2O_3$ film was proportional to the $NH_4OH$ concentration. $Al_2O_3$ film deposited with 5 % $NH_4OH$ has the greatest negative fixed oxide charge density ($Q_f$), which can be explained by aluminum vacancies ($V_{Al}$) or oxygen interstitials ($O_i$) under O-rich condition. $Al_2O_3$ film deposited with $NH_4OH$ 5 % condition also shows lower interface trap density ($D_{it}$) distribution than those of other conditions. At $NH_4OH$ 5 % condition, moreover, $Al_2O_3$ film shows the highest excess carrier lifetime (${\tau}_{PCD}$) and the lowest surface recombination velocity ($S_{eff}$), which are linked with its passivation properties. The proposed $Al_2O_3$ film deposited with diluted $NH_4OH$ is very promising for passivation layer and AR coating of the p-type c-Si solar cell.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.47-50
• /
• 2002

ZnO nanowires were coated conformally with aluminum oxide ($Al_{2}O_{3}$) material by atomic layer deposition (ALD). The ZnO nanowires were first synthesized on a Si (100) substrate at $1380^{\circ}C$ from ball-milled ZnO powders by a thermal evaporation procedure with an argon carrier gas without any catalysts; the length and diameter of these ZnO nanowires are $20\sim30{\mu}m$ and $50{\sim}200$ nm, respectively. $Al_{2}O_{3}$ films were then deposited on these ZnO nanowires by ALD at a substrate temperature of $300^{\circ}C$ using trimethylaluminum (TMA) and distilled water ($H_{2}O$). Transmission electron microscopy (TEM) images of the deposited ZnO nanowires revealed that 40nm-thick $Al_{2}O_{3}$ cylindrical shells surround the ZnO nanowires.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• v.9 no.1
• /
• pp.1022-1025
• /
• 2005

The effect of substrate surface to the formation of ZnO nanostructures has been investigated using Si (111), $Al_2O_3$(C-plane) $Al_2O_3$(A-plane), and $Al_2O_3$(R-plane) substrates. The growth temperature was controlled from 500$^{\circ}C$ ${\sim}$ 600$^{\circ}C$, and the luminescence properties were investigated by a series of photoluminescence (PL) measurements at the elevating temperatures. ZnO nanostructures grown on Si substrate show strong UV emission intensity along with green emission positioned at 3.22 eV and 2.5 eV, respectively. However, green emission was not observed from the ZnO nanostructures grown on $Al_2O_3$ substrates. It is explained in terms of the difference of the surface energy between Si and $Al_2O_3$. Also, the origin of UV emissions has been discussed by using the temperature-dependent PL. The distinction of the PL spectra is interpreted in terms of the difference of the impurity included in the nanostructures.

• Journal of Powder Materials
• /
• v.11 no.2
• /
• pp.171-178
• /
• 2004

Effects of liquid phase and reinforcing particle morphology on the sintering of Al-6 wt％Cu-10 vol％ $Al_2O_3$ or SiC particles were studied in regards to densification, structure and transverse rupture properties. The Al-Cu liquid phase penetrated the boundaries between the aluminum matrix powders and the interfaces with reinforcing particles as well, indicating a good wettability to the powders. This enhanced the densification during sintering and the resulting strength and ductility. Since most of the copper added, however, was dissolved in the liquid phase and formed a brittle $CuAl_2$ phase upon cooling rather than alloyed with the aluminum matrix, the strengthening effect by the copper was not fully realized. Reinforcing particles of agglomerate type were found less suitable for the liquid phase sintering than solid type particles. $Al_2O_3$ and SiC particles protluced little difference on the sintering behavior but their size had a large effect. Repressing of the sintered composites increased density and bending properties but caused debonding at the matrix-particle interfaces and also fracturing of the particles.

• Journal of the Korean institute of surface engineering
• /
• v.35 no.2
• /
• pp.101-106
• /
• 2002

The microstructural changes of $NiCrAlY/ZrO_2$-$Y_2$$O_3$ composite coatings that were manufactured by air-plasma-spraying were investigated using XRD and SEM/EDS. The as-sprayed microstructure consisted of (Ni,Cr)-rich regions, ($ZrO_2$-$Y_2$$O_3$)-rich regions, and $Al_2$$O_3$-rich layers that were formed during spraying owing to the oxidation of Al in NiCrAlY. During oxidation between 900 and $1100^{\circ}C$ in air, Cr in the (Ni,Cr)-rich regions diffused toward the $Al_2$$O_3$-rich layers, and oxidized to be dissolved in $A1_2$$O_3$-rich layers. The oxidation of Ni in the (Ni,Cr)-rich regions was less distinct, except at the outer surface of the coating.

• Proceedings of the KIEE Conference
• /
• 2000.11c
• /
• pp.479-481
• /
• 2000

The effect of $Al_{2}O_{3}+Y_{2}O_{3}$ additives on fracture toughness of $\beta-SiC-TiB_2$ composites by hot-pressed sintering were investigated. The f$\beta-SiC-TiB_2$ ceramic composites were hot-presse sintered and annealed by adding 16, 20, 24wt% $Al_{2}O_{3}+Y_{2}O_{3}$(6 : 4wt%) powder as a liquid forming additives at low temperature($1800^{\circ}C$) for 4h. In this microstructures, the relative density is over 95.88% of the theoretical density and the porosity increased with increasing $Al_{2}O_{3}+Y_{2}O_{3}$ contents because of the increasing tendency of pore formation. The fracture toughness showed the highest of $5.88MPa{\cdot}m^{1/2}$ for composites added with 20wt% $Al_{2}O_{3}+Y_{2}O_{3}$ additives at room temperature. The electrical resistivity showed the lowest of $5.22{\times}10^{-4}\Omega{\cdot}cm$ for composite added with 20wt% $Al_{2}O_{3}+Y_{2}O_{3}$ additives at room temperature and is all positive temperature coefficient resistance (PTCR) against temperature up to $700^{\circ}C$.

• Journal of the Korean Ceramic Society
• /
• v.39 no.8
• /
• pp.769-774
• /
• 2002

The powder mixture in which Fe-Ni alloy particles of 20 nm were homogeneously dispersed on $Al_2O_3$ particle surfaces was prepared by hydrogen reduction of $Al_2O_3$ and metal oxide powders. $Al_2O_3$/Fe-Ni nanocomposites fabricated by pressureless sintering were only composed of $Al_2O_3$ and ${gamma}$-Fe-Ni phases and achieved over 98% of the theoretical density at the sintering temperature above $1350^{\circ}C$. The highest strength and toughness of the composites were 574 MPa and 3.9 MP$a{\cdot}m1/2$, respectively. These values were about 20% higher than these of monolithic $Al_2O_3$ sintered at the same conditions. Nanocomposites showed ferromagnetic properties and coercive force was increased with decrease of the average particle size of dispersions.

• Journal of IKEEE
• /
• v.25 no.1
• /
• pp.1-9
• /
• 2021

In this paper, a 4H-SiC UMOSFET was studied which is suitable for high voltage and high current applications. In general, SiO2 is a material most commonly used as a gate dielectric material in SiC MOSFETs. However, since the dielectric constant value is 2.5 times lower than 4H-SiC, it suffers a high electric field and has poor characteristics in the SiO2/SiC junction. Therefore, the static characteristics of a device with high-k material as a gate dielectric and a device with SiO2 were compared using TCAD simulation. The results show BV decreased, VTH decreased, gm increased, and Ron decreased. Especially when the temperature is 300K, the Ron of Al2O3 and HfO2 decreases by 66.29% and 69.49%. and at 600K, Ron decreases by 39.71% and 49.88%, respectively. Thus, Al2O3 and HfO2 are suitable as gate dielectric materials for high voltage SiC MOSFET.