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Design and Implementation of a C-to-SystemC Synthesizer (C-to-SystemC 합성기의 설계 및 구현)

  • You, Myoung-Keun;Song, Gi-Yong
    • Journal of the Institute of Convergence Signal Processing
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    • v.10 no.2
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    • pp.141-145
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    • 2009
  • A C-to-SystemC synthesizer which processes the input behavior according to high-level synthesis, and then transforms the synthesis result into SystemC module code is implemented in this paper. In the synthesis process, the input behavioral description in C source code is scheduled using list scheduling algorithm and register allocation is performed using left-edge algorithm on the result of scheduling. In the SystemC process, the output from high-level synthesis process is transformed into SystemC module code by combining it with SystemC features such as channels and ports. The operation of the implemented C-to-SystemC synthesizer is validated through simulating the synthesis of elliptic wave filter in SystemC code. C-to-SystemC synthesizer can be used as a part of tool-chain which helps to implement SystemC design methodology covering from modeling to synthesis.

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Effect of(Si+C) Content on the Strength of SiC-(Si+C) Sintered Bodies (SiC-(Si+C) 소결체의 강도에 미치는 (Si+C)첨가량의 영향)

  • 김은태;김완덕;최진영;우정인
    • Journal of the Korean Ceramic Society
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    • v.23 no.3
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    • pp.9-14
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    • 1986
  • $\beta$-SiC bonded SiC bodies were prepared from various conditions such as several compositions of(Si+C)/$\alpha$ -SiC ratio and different firing schedules and were respectively investigated compressive strength MOR and mi-crostructure. One firing schedule which produced the specimens that had $\beta$-SiC neck form with the highest strength was selected and experimented by each firing temperature. results obtained are as follows : 1) The amount of (Si+C) for th highest MOR of SiC-(Si+C) sintered body is 20wt% 2) By adding 20wt% content of (Si+C) and heating up to 1, 500 with soaking 3hrs respectively at 1,150$^{\circ}C$ 1,250$^{\circ}C$ 1,350$^{\circ}C$ and 1,400$^{\circ}C$ the highest MOR of fired specimen was resulted and its microstructure of ma-trix was composed of close $\beta$-SiC neck. 3) Microstructure of $\beta$-SiC were different greatly from each other by firing time and/or quantity of adding mix-ture and it was confirmed that they were composed of neck particle-like and heterogeneous texture. 4)$\beta$-SiC synthesis proceed rapidly at the temperature between 1,250$^{\circ}C$ and 1,350$^{\circ}C$ 5) All of the properties of 85 SiC-20(Si+C) specimen improved according to increasing temperature above 1,350$^{\circ}C$.

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Fabrication of Reaction Sintered SiC Materials by Complex Slurry with Nano Size Particles (나노입자 혼합 복합슬러리를 이용한 반응소결 SiC 재료의 제조)

  • Lee Sang-Pill
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.29 no.3 s.234
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    • pp.425-431
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    • 2005
  • The efficiency of complex slurry preparation route for developing the high performance SiC matrix of $RS-SiC_{f}/SiC$ composites has been investigated. The green bodies for RS-SiC materials prior to the infiltration of molten silicon were prepared with various C/SiC complex slurries, which associated with both the sizes of starting SiC particles and the blending conditions of starting SiC and C particles. The characterization of Rs-SiC materials was examined by means of SEM, EDS and three point bending test. Based on the mechanical property-microstructure correlation, the process optimization is also discussed. The flexural strength of Rs-SiC materials greatly depended on the content of residual Si. The decrease of starting SiC particle size in the C/SiC complex slurry was effective for improving the flexural strength of RS-SiC materials.

Comparisons of Lipid Fractions, Lipid Classes and Individual Free Fatty Acids in Total Lipids from Cheese and Soybeans (치이즈와 대두 지질의 종류 및 지방산 조성의 비교)

  • Kim, Yong Kook
    • Korean Journal of Agricultural Science
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    • v.18 no.2
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    • pp.119-126
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    • 1991
  • The lipid fractions, lipid classes and free fatty acids in total lipids from cheese and soybeans were analyzed by column, thin-layer and gas chromatographies. The percentages of neutral lipid, glycolipid and phospholipid in cheese were 96.2, 1.1 and 0.7, whereas those in soybeans were 87.5, 0.5 and 4.3. Major lipid classes of total lipid, and neutral lipid were triglyceride, fatty acid, cholesterol, diglyceride, monoglyceride and polar lipid, and those of glycolipid and phospholipid were triglyceride, diglyceride, monoglyceride and polar lipid in total lipid from cheese. Large amounts of triglyceride and polar lipid and small amounts of diglyceride, monoglyceride and polar lipid were detected in all lipid fractions from soybeans. The higher proportion of C4:0, C6:0, C8:0, C10:0, C12:0, C14:0, C16:0, C16:1, C18:0, C18:1 and C18:2 fatty acids were found in total lipid from cheese, whereas those of C18:0, C18:2 and C18:3 fatty acids were found in total lipid from soybeans. Most predominant fatty acids are C16:0 for the total lipid of cheese and C18:2 for the total lipid of soybeans. The lower proportions of C14:1, C15:0, C17:0 and C20:0 fatty acids in total lipid from cheese and C4:0, C6:0, C10:0 and C18:0 in total lipid from soybeans were detected.

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Raman Characteristics of Polycrystalline 3C-SiC Thin Films (다결정 3C-SiC 박막의 라만 특성)

  • Jeong, Jun-Ho;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.357-358
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    • 2007
  • Raman spectra of poly (polycrystalline) 3C-SiC thin films, which were deposited on the oxidized Si substrate by APCVD, have been measured. They were used to study the mechanical characteristics of poly 3C-SiC grown in various temperatures. TO and LO modes of 2.0 m poly 3C-SiC grown at 1180 C occurred at 794.4 and $965.7\;cm^{-1}$. Their FWHMs (full width half maximum) were used to investigate the stress and the disorder of 3C-SiC. The broad FWHM can explain that the crystallinity of 3C-SiC grown at 1180 C becomes poly crystalline instead of the disordered crystal. The ratio of intensity $I_{(LO)}/I_{(TO)}$ 1.0 means that the crystal defect of 3C-SiC/$SiO_2$/Si is small. The biaxial stress of poly 3C-SiC was obtained as 428 MPa. In the interface of 3C-SiC/$SiO_2$, the phonon mode of C-O bonding appeared at $1122.6\;cm^{-1}$. The phonon modes related to D and G bands of C-C bonding were measured at 1355.8 and $1596.8\;cm^{-1}$ respectively.

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Effects of ZrC and VC Addition on the Diffusion Induced Recrystallization of TiC--$Cr_3C_2$ (TiC-$Cr_3C_2$ 계 확산구동 재결정에 미치는 ZrC와 VC 첨가영향)

  • 채기웅
    • Journal of the Korean Ceramic Society
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    • v.33 no.2
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    • pp.223-227
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    • 1996
  • The effect of ZrC and VC addition on the diffusion induced recrystallization (DIR) of TiC-Cr3C2 has been investigated. With in creasing the amount of added ZrC to Cr3C2 the DIR of TiC was suppressed at the begining and then occurred. On the contrary the DIR was accelerated with the addition of VC to Cr3C2 Because the lattice parameters of (Ti, Cr)C and (Ti,V)C are smaller and that of (Ti, Zr)C is larger than that of TiC the lattice parameter of (Ti,Cr,Zr)C is expected to be similar to that of TiC,. The results indicate that the strain energy due to lattice mismatch between TiC and solid-solution carbide is the driving force of the observed energy due to lattice mismatch between TiC and solid-solution carbide is the driving force of the observed DIR.

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Molecular Genetic Studies of Korean Population. 16. Genetic Polymorphim of the Sixth Complement Component (C6) (한국인 집단의 유전학적 연구 16. Compiement Component 6의 유전적 다형)

  • 박경숙;김영진;목지원;이미혜
    • The Korean Journal of Zoology
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    • v.34 no.2
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    • pp.228-231
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    • 1991
  • The phenotyping of the sixth complement component (C6) was performed on plasma or serum samples from 383 unrelated Korean, by IEF and immunoblotting using anti-human C6 serum. Three common allotypes, C6 A, C6 B and C6 B2 and two rare allotypes, C6 Ml and C6 Mu were observed. The allele frequencies of C6*A, C6*B and C6*B2 were estimated to be 0.4399, 0.5144, 0.0392, respectively. These frequencies are similar to those of the Eastasian populations.

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Studies on the Putative Parent of Cultivated Chrysanthemum (IV) (재배국의 추정원종에 관한 연구(IV))

  • 한창열
    • Journal of Plant Biology
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    • v.11 no.1
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    • pp.33-37
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    • 1968
  • Present investigation was carried out in order to make clear the fertility, morphological characters, and chromosome numbers of interspecific hybrids of Chrysanthemum Zauadskii, C. indicum, and C. lavandulaefolium. 1. Hybrids were not self-pollinated. When sib-crossed the fertility was 1.3~19.3%. 2. F2 individuals were variable in their morphological Characters. 3. Chromosome numbers of three putative parents were different from those reported previously: C. zawadskii 2n=36, C. indicum 2n=20, C. lavandulaefolium 2n=16, $C. indicum{\times}C. zawadskii 2n=28, C. zawadskii{\times}C. indicum-1 2n=28, C. zawadskii{\times}C. indicum-2 2n=28, C. zawadskii{\times}C. indicum-3 2n=28, C. zawadskii{\times}C. indicum-4 2n=28, C. zawadskii{\times}C. indicum-5 2n=28, C. zawadskii {\times}C. lavandulaefolium-1 2n=26, C. zawadskii{\times}C. lavandulaefolium-2 2n=26.$

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Properties of a Surface Curvature in Toric Lens (토릭렌즈의 표면 곡률 특성 연구)

  • Park, Sang-An;Kim, Yong-Geun
    • Journal of Korean Ophthalmic Optics Society
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    • v.6 no.2
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    • pp.65-70
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    • 2001
  • We obtained the sum of two curvature ($C_x+C_y$) in toric lens which two toroidal surface is the right angle each other. $$C_x+C_y=\frac{x^2+y^2}{2r_1}+\frac{x^2}{2}(\frac{1}{r_2}-\frac{1}{r_1})$$ and the sum of two curvature ($C_a+C_b$) in toric lens about the cross angle. $$(C_a+C_b)=\frac{x^2cos^2{\alpha}_1}{2r_1}+\frac{x^2cos^2{\alpha}_2}{2r_2}+\frac{y^2sin^2{\alpha}_1}{2r_1}+\frac{y^2sin^2{\alpha}_2}{2r_2}$$ and claculated the parameter S, C, ${\theta}$ of a combination power in toric lens of the cross angle including surface curvature ($C_x$, $C_y$) values. $$S=(n-1)\[\frac{C_x}{x^2}+\frac{C_y}{y^2}\]-\frac{C}{2},\;C=-\frac{2(n-1)}{sin2{\theta}}\[\frac{C_x}{x^2}+\frac{C_y}{y^2}\]$$ $${\theta}=\frac{1}{2}tan^{-1}\[-\frac{{C_xy^2sin2{\theta}_1}+{C_yx^2sin2{\theta}_2}}{{C_xy^2cos2{\theta}_1}+{C_yx^2cos2{\theta}_2}}\]$$.

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Preparation of ZrC/SiC by Carbothermal Reduction of Zircon (지르콘의 탄소열환원에 의한 ZrC/SiC의 합성)

  • Park, Hong-Chae;Lee, Yoon-Bok;Lee, Cheol-Gyu;Oh, Ki-Dong
    • Applied Chemistry for Engineering
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    • v.5 no.6
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    • pp.1044-1055
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    • 1994
  • The preparation of ZrC/SiC mixed powders from $ZrSiO_4/C$ and $ZrSiO_4/Al/C$ systems was attempted in the temperature range below $1600^{\circ}C$ under Ar or $Ar/H_2$ gas flow(100-500ml/min). The formation mechanism and kinetics of ZrC/SiC were suggested and the resultant powders were characterized. In $ZrSiO_4/C$ system, ZrC and SiC were formed by competitive reaction of $ZrO_2(s)$ and SiO(g) with carbon at temperature higher than $1400^{\circ}C$. The apparent activation energy for the formation of ZrC was approximately 18.5kcal/mol($1400-1600^{\circ}C$). In $ZrSiO_4/Al/C$ system, ZrC was formed by reaction of ZrO(g) with Al(l, g) and carbon at temperature higher than $1200^{\circ}C$, and SiC was formed by reduction-carbonization of SiO(g) with Al(l, g) and carbon at temperature higher than $1300^{\circ}C$. The products obtained at $1600^{\circ}C$ for 5h consisted of ZrC with lattice constant of $4.679{\AA}$ and crystallite size of $640{\AA}$, and SiC with lattice constant of $4.135{\AA}$ and crystallize size of $500{\AA}$. And also, the mean particle size was about $21.8{\mu}m$.

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