• Korean Journal of Optics and Photonics
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• v.14 no.3
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• pp.327-330
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• 2003

We present the fabrication and measured performance of a wavelength tunable Butt coupled DBR-LD. An average coupling efficiency between active layer and passive waveguide layer was measured over 85％per facet, and the average threshold current was 21 ㎃ for the waveguide integrated DBR laser. High output power of Butt coupled DBR-LD was obtained over 25 ㎽. As high as 25 ㎽ of output power was achieved by the butt coupled method. The maximum wavelength tuning range is about 7.4 nm, and the side mode suppression ratio was more than 40 ㏈ using 1.3 ${\mu}{\textrm}{m}$ InGaAsP waveguide layer.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.9
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• pp.666-672
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• 2003

In this paper, we described the fabrication and the performance of wavelength tunable distributed bragg reflector (DBR) laser diode (LD), having different waveguide coupling mechanisms; integrated-twin-guide (ITG) DBR-LD and butt coupled (BT) DBR-LD. This deviceis fabricated by metal organic vapor phase epitaxy (MOVPE) growth and planar buried heterostructure (PBH)-type transverse current confinement structure. The result of measurement, the optical performance of BT-DBR-LD is better over 2 times than that of ITG-DBR-LD at the variation of threshold current and output power, and slop efficiency due to the higher coupling efficiency of the butt coupled structure than the integrated twin guide structure. The maximum wavelength tuning range is about 7.2nm for ITG DBR-LD and 7.4nm for BT DBR-LD. Both types of lasers have a very high yield of single mode operation with a side-mode suppression ratio of more than 35dB.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.16-20
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• 2004

We present the fabrication and performance of wavelength tunable butt coupled (BT) sampled-grating (SG) distributed bragg reflector (DBR) - planar buried heterostructure (PBH) laser diodes (LD). The fabricated LD showed the high optical output power due to the high coupling efficiency between active and passive components by the BT coupling methods. The series resistance and diode ideality factor of LD were measured to be 3.7 $\Omega$ and 1.35, respectively. The average threshold current was 25 ㎃. The output powers of BT-SG DBR-PBH-LD were obtained to be as high as 12.3 and 24.56 ㎽ at 100 and 200 ㎃, respectively. The maximum wavelength tuning range was about 31 nm and the side mode suppression ratio was about 37 dB.

• Korean Journal of Optics and Photonics
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• v.15 no.5
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• pp.469-474
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• 2004

We have fabricated and designed wavelength-tunable sampled grating distributed Bragg reflector laser diodes(SGDBR-LD) by using, for the first time, planar buried heterostructures(PBH). The diodes have low threshold current values and high-performance of laser operation. Growth condition using metal organic chemical vapor deposition(MOCVD) was optimized for the formation of a good butt-coupling at the interface. A maximum output power of the fabricated device was 20 mW under 200 mA continuous wave(CW) operation at $25^{\circ}C$. Average threshold current and voltage were 12 mA and 0.8 V, approximately. This output power is higher than those of ridge waveguide(RWG) and buried ridge stripe(BRS) structures by amounts of 9 mW and 13 mW, respectively. We obtained a tuning range of 44.4nm which is well matched with the target value of our design. The side mode suppression ratio of more than 35 dB was obtained for the whole tuning range. Optical output power variation was less than 5 dB, which is 4 dB smaller than that of RWG structures.