• 한국산학기술학회논문지
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• 제16권2호
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• pp.1364-1369
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• 2015

반도체 칩의 고집적화로 과거 와이어 본딩 공정에서 BUMP 공정으로 전환되면서 반도체칩과 외부 기기로 이어지는 통신선도 더욱 미세해짐으로 인해 보다 정밀한 작업이 필요한 실정이지만 PSPI의 고점도 특성상 정량제어가 어렵고 버블유입에 따른 수율의 저하가 계속되고 있는 실정이다. 따라서 본 논문에서는 반도체 BUMP 공정에서 고점도 감광성 폴리이미드(PSPI : Photosensitive Polyimide)의 도포(coating)시 발생하는 기포(gas)를 제거하여 공급하는 D&P(Degassing and Pumping) 시스템을 개발하였다.

• Journal of Welding and Joining
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• 제31권6호
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• pp.77-83
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• 2013

3D packaging technology using TSV (Through Silicon Via)has been studied in the recent years to achieve higher performance, lower power consumption and smaller package size because electrical line is shorter electrical resistivity than any other packaging technology. To stack TSV chips vertically, reliable and robust bonding technology is required because mechanical stress and thermal stress cause fracture during the bonding process. Cu pillar/solder ${\mu}$-bump bonding process is usually to interconnect TSV chips vertically although it has weak shape to mechanical stress and thermal stress. In this study, we suggest Insert-Bump (ISB) bonding process newly to stack TSV chips. Through experiments, we tried to find optimal bonding conditions such as bonding temperature and bonding pressure. After ISB bonding, we observed microstructure of bump joint by SEM and then evaluated properties of bump joint by die shear test.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2001년도 추계 기술심포지움
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• pp.49-54
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• 2001

This paper presents several UBM (Under Bump Metallurgy) systems which are currently used for wafer level solder bumping technology. The advantages and disadvantages of each UBM are summarized from the point of view of process compatability and interface morphological stability.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 합동 추계학술대회 논문집 정보 및 제어부문
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• pp.253-256
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• 2002

A programmable CMOS negative resistor has been designed and fabricated in a 0.5um double poly double metal technology. The proposed CMOS negative resistor consists of a positive feedback OTA and a bump circuit with Gaussian-like I-V curve. Measurements of the fabricated chip confirm that the proposed CMOS resistor shows various negative resistance according to control voltage.

• Journal of Welding and Joining
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• 제22권1호
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• pp.65-70
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• 2004

A soldering process with longitudinal ultrasonic is conducted in this work using the Au bump and substrate. Localized heating of the solder is achieved and the stirring action due to the ultrasonic is found to influence the bond strength and microstructure of the eutectic solder The acceptable bonding condition is determined from the tensile strength. Since the multiple bonds can be formed simultaneously with localized heating, the proposed ultrasonic soldering method appears to be applicable to the high-density electronic package.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회B
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• pp.2896-2900
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• 2007

A numerical analysis was carried out to investigate the degradation of Volatile Organic Compounds (VOC) in photocatalytic microreactors with different inner geometries. Two different cases of microreactor were considered, namely, one microreactor has bump on the channel and the other has no bump on the channel. The removal efficiency of VOC has been calculated by the Langmuir-Hinshelwood reaction rate equation that was obtained from the experimental results. From the numerical calculations, it was observed that the conversion ratio of VOC for the microchannel with bump is about 4.5% greater than the microchannel without bump. And the mass transfer characteristics in the microreactor are also shown in numerical results. These results can be used effectively for the photocatalytic numerical analysis.

• 한국표면공학회지
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• 제50권3호
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• pp.155-163
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• 2017

In this study, the effects of the concentration of metal ions and the applied current density in the Sn-Ag plating solutions were examined in regards to the resulting composition and morphology of the solder bumps' surface. Furthermore the effect of any impurities present in the methanesulfonic acid used as a base acid in the Sn-Ag solder plating solution on the stability of plating solution as well as the characteristics of the Sn-Ag alloys films was also explored. As expected, the uniform bump was obtained by means of removing impurities in the plating solution. Consequently the resultant solder bump was obtained in an optimal current density of the range of $1A/dm^2$ to $15A/dm^2$, which has acceptable bump shape and surface roughness with 12inch wafer trial results.

• 한국컴퓨터그래픽스학회논문지
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• 제2권1호
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• pp.15-23
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• 1996

범프 맵핑(bump mapping)은 나무껍질과 같은 울퉁불퉁한 물체를 표현하기 위한 방법으로서 텍스쳐 맵핑(texture mapping)보다 더욱 사실적인 영상을 얻을 수 있는 렌더링(rendering) 기법이다. 본 논문에서는 기존의 범프 맵핑 알고리즘의 단점을 보완한 새로운 알고리즘을 제시하며, 또한 이 알고리즘을 실시간으로 처리하기 위한 하드웨어 구조를 제시한다. 이는 기존의 구조에 비해 구현하기가 더욱 간단한 것이다.

• Tribology and Lubricants
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• 제23권4호
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• pp.162-169
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• 2007

This paper deals with friction effects on the performance of double-bumped AFBs. The stiffness and damping coefficients of the double bump vary depending on the external load and its friction coefficient. The double bump can be either in the single or double active region depending on vertical deflection. The equivalent stiffness and damping coefficients of the bump system are derived from the vertical and horizontal deflection of the bump, including the friction effect. A static and dynamic performance analysis is carried out by using the finite difference method and the perturbation technique. The results of the performance analysis for a double-bumped AFB are compared with those obtained for a single-bumped AFB. This paper successfully proves that a double bumped AFB has higher load capacity, stiffness, and damping than a single-bumped AFB in a heavily loaded condition.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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• pp.456-462
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• 2002

In the present work, a low cost and fine pitch bumping process by electroless Ni/immersion Au UBM (under bump metallurgy) and stencil printing for the solder bump on the Al pad is discussed. The Chip used this experimental had an array of pad 14x14 and zincate catalyst treatment is applied as the pretreatment of Al bond pad, it was shown that the second zincating process produced a dense continuous zincating layer compared to first zincating. Ni UBM was analyzed using Scanning electron microscopy, Energy dispersive x-ray, Atomic force microscopy, and X-ray diffractometer. The electroless Ni-P had amorphous structures in as-plated condition. and crystallized at 321 C to Ni and Ni$_3$P. Solder bumps are formed on without bridge or missing bump by stencil print solder bump process.