• Journal of Information Display
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• v.10 no.4
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• pp.143-148
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• 2009

The theoretical current density equations for organic semiconductors was derived according to the internal carrier emission equation based on the diffusion model at the Schottky barrier contact and the mobility equation based on the field dependence model, the so-called "Poole-Frenkel mobility model." The electric field becomes constant because of the absence of a space charge effect in the case of a higher injection barrier height and a lower sample thickness, but there is distribution in the electric field because of the space charge effect in the case of a lower injection barrier height and a higher sample thickness. The transition between the injection- and bulk-limited currents was presented according to the Schottky barrier height and the sample thickness change.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.2
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• pp.277-281
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• 2007

We investigated fault current limitation characteristics of the resistive superconducting fault current limiter (SFCL) which consisted of a Bi-2212 bulk coil and a shunt coil. The Bi-2212 bulk coil and the shunt coil were connected in parallel. The Bi-2212 bulk coil was placed inside the shunt coil to induce field-assisted quench. The fault test was conducted at an input voltage of $200V_{rms}$ and fault current of $12kA_{rms}\;and\;25kA_{rms}$. The fault conditions were asymmetric and symmetric, and the fault period was 5 cycles. The test results show that the SFCL successfully limited the fault current of $12kA_{rms}\;and\;25kA_{rms}$ to below $5.5{\sim}6.9kA_{peak}\;within\;0.64{\sim}2.17$ msec after the fault occurred. Limitation was faster under symmetric fault test condition due to the larger change rate of current. We concluded that the speed of fault current limitation was determined by the speed of current rise rather than the amplitude of a short circuit current. These results show that the Bi-2212 bulk coil is suitable for distribution-class SFCLS.

• Journal of Biomedical Engineering Research
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• v.3 no.2
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• pp.95-100
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• 1982

Glucose oxidase from A. niger was entrapped in polyacrylamide gel which was used in the enzyme electrode for glucose analysis. The electrode was assembled by placing the gel between the membranes on the surface of a Clark type electrode. In order to make it possible to analyze the experimental results later, the stagnation flow was adopted wheree the governing fluid mechanics were well known. The current increased with the increase concentration in the bulk below a certain level of glucose concentration beyond which no more current increase was observed. This is probably due to the diffusion limitation of oxygen from the bulk solution. Also the current increased witll the enzyme loading in the gel, but the linearity between the current and the glucose concentration was rather limited to a narrow range. Flow rate was found to be very important, which means that film diffusion is very important under the flow rate of 5cm/sec. As a conclusion, enzyme loading, gel layer thickness, stirring speed and bulk concentration of glucose were found to be most improtant parameters in yielding a linar current reponse with respect to the bulk glucose concentration.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.639-640
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• 2006

We investigated fault current limitation characteristics of the resistive superconducting fault current limiter(SFCL) which consisted of a Bi-2212 bulk coil and a shunt coil. The Bi-2212 bulk coil and the shunt coil were connected in parallel. The Bi-2212 bulk coil was placed inside the shunt coil to induce field-assisted quench. The fault test was conducted at an input voltage of 200 $V_{rms}$ and fault current of 12 $kA_{rms}$ and 25 $kA_{rms}$. The fault conditions were asymmetric and symmetric, and the fault period was 5 cycles. The test results show that the SFCL successfully limited the fault current of 12 $kA_{rms}$ and 25 $kA_{rms}$ to below $5.5{\sim}6.9kA_{peak}$ within $0.64{\sim}2.17$ msec after the fault occurred. Limitation was faster under symmetric fault test condition due to the larger change rate of current. We concluded that the speed of fault current limitation was determined by the speed of current rise rather than the amplitude of a short circuit current. These results show that the Bi-2212 bulk coil is suitable for distribution-class SFCLs.

• Progress in Superconductivity
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• v.1 no.1
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• pp.14-19
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• 1999

Measurements across single grain boundaries in YBCO thin films and bulk bicrystals have been used to demonstrate the influence of grain boundary structure on the critical current carried across the grain boundary. In particular, we show that one role of grain boundary structure is to change the degree of pinning along the boundary, thereby influencing the critical current. This effect can be used to explain the large difference in critical current density across grain boundaries in thin films compared to that for bulk bicrystal. These differences illustrate the distinction between the intrinsic mechanism of coupling across the grain boundary that determines the maximum possible critical current across a boundary and the measured critical current which is limited by dissipation due to the motion of vortices.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.1 s.38
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• pp.17-22
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• 2006

Ferroelectric PZT thin films were formed by 2-step sputtering and their dielectric properties and conduction mechanisms were investigated. Also. donor impurity doping was tried to compensate the carriers in PZT thin films. The leakage current density was able to reduce to $10^{-7}A/cm^2$ order by 2-step sputtering with thickness control of room temp.-layer. The conduction mechanism was confirmed as bulk-limited, and optimum donor impurities on PZT thin film were taken. Especially, leakage current characteristics was improved to $10^{-8}A/cm^2$ order in donor-doped PZT thin films formed by 2-step sputtering.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.933-934
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• 2007

We fabricated and tested a resistive type superconducting fault current limiter (SFCL) based on BSCCO-2212 bulk coils. Each bulk coils of the SFCL was designed to have the rated voltage of 220 $V_{rms}$ and the critical current($I_C$) of 320$\sim$340 A at 77K. Ten components in series, make the SFCL having the rated voltage of 2.2 $kV_{rms}$ for equal quench test. The fault test was conducted at an input voltage of 2.2 $kV_{rms}$ and fault current of 25 $kA_{rms}$. In addition, we examined the endurance characteristics for all bulk coils through repeat fault test. Test results shows that the SFCL successfully limited the fault current of 25$kA_{rms}$ to below $7{\sim}8kA_{p}$ within minimum 1.1msec after fault occurred. All bulk coils quenched together upon faults and shared the rated voltage evenly. The endurance test results show an equivalent among repeat fault test. During the quench process, average temperature of all bulk coils did not exceed 250 K, and the SFCL was totally safe during the whole operation.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.3 s.32
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• pp.91-97
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• 2004

PBT thin films were formed by rf-magnetron sputtering on $Pt/Ti/SiO_2/Si$ substrate. Bulk-PZT target containing $5\%$-excess PbO was used. After PZT thin films had been deposited at room temperature, remaining portion of the thin film was formed by in-situ process. The ferroelectric perovskite phase was formed at $650^{\circ}C$. The leakage current property was improved dramatically by 2-step sputtering, and in the sample containing optimum thickness of room temp.-layer very low leakage current of $2{\times}10^{-7}A/cm^2$ was shown. As a result of the investigation on the leakage current mechanism, the electrical conduction mechanism in all PZT thin films formed by several conditions was confirmed as bulk-limited mechanism.

• Progress in Superconductivity and Cryogenics
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• v.24 no.3
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• pp.47-51
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• 2022

With the innovative development of bio, pharmaceutical, and semiconductor technologies, it is essential to demand a next-generation transfer system that minimizes dust and vibrations generated during the manufacturing process. In order to develop dust-free and non-contact transfer systems, the high temperature superconductor (HTS) bulks have been applied as a magnet for levitation. However, sintered HTS bulk magnets are limited in their applications due to their relatively low critical current density (J_c) of several kA/cm² and low mechanical properties as a ceramic material. In addition, during cooling to cryogenic temperatures repeatedly, cracks and damage may occur by thermal shock. On the other hand, the bulk magnets made by stacked HTS tapes have various advantages, such as relatively high mechanical properties by alternate stacking of the metal and ceramic layer, high magnetic levitation performance by using coated conductors with high J_c of several MA/cm², consistent superconducting properties, miniaturization, light-weight, etc. In this study, we tried to fabricate HTS tapes stacked bulk magnets with 60 mm × 60 mm area and various numbers of HTS tape stacked layers for magnetic levitation. In order to examine the levitation forces of bulk magnets stacked with HTS tapes from 1 to 16 layers, specialized force measurement apparatus was made and adapted to measure the levitation force. By increasing the number of HTS tapes stacked layers, the levitation force of bulk magnet become larger. 16 HTS tapes stacked bulk magnets show promising levitation force of about 23.5 N, 6.538 kPa at 10 mm of levitated distance from NdFeB permanent magnet.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.149-152
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• 2000

AC impedance measurements on poly-p-phenylenevinylene (PPV) LEDs in the frequency range between 10 Hz and 10$\^$6/ Hz were carried out. The complex-plane impedance spectra indicate that PPV devices can be represented by equivalent circuits that corresponds to the bulk and interfacial regions at high and low frequencies, respectively. As a result of complex impedance analysis through the separation of bulk and interfacial region impedances, increase of forward bias in Al/PPV/ITO devices gave rise to relative decrease of the interfacial region impedance. Above the electric field of 10$\^$6/ V/cm the PPV device showed a space charge limited current (SCLC) conduction. The dependence of the transport mechanism and dielectric properties on the applied bias voltage is discussed.