• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.156-159
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• 2002

Film Bulk Acoustic wave Resonator (FBAR) using thin piezoelectric films can be fabricated as monolithic integrated devices with compatibility to semiconductor process, leading to small size, low cost and high Q RF circuit elements with wide applications in communications area. This paper presents a MMIC compatible Suspended FBAR using surface micromachining. It is possible to make Si$_3$N$_4$/SiO$_2$/Si$_3$N$_4$membrane by using surface micromachining and its good effect is to remove the substrate silicon loss. FBAR was made on 2$\mu\textrm{m}$ multi-layered membrane using CVD process. According to our result, Fabricated film bulk acoustic wave resonator has two adventages. First, in the respect of device Process, our Process of the resonator using surface micromachining is very simple better than that of resonator using bull micromachining. Second, because of using the multiple layer, thermal expansion coefficient is compensated, so, the stress of thin film is reduced.

• Transactions of the Society of Information Storage Systems
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• v.1 no.2
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• pp.175-181
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• 2005

SiOB is an essential part of slim optical pickup, where the silicon mirror, LD stand, silicon PD are integrated and LD is flip chip bonded. SiOB is fabricated with bulk micromachining. Especially the fabrication of silicon wafer with stepped concave areas has many extraordinary difficulties. As a matter of fact, experiences and knowledges are rare in the fabrication of the highly stepped silicon wafer. The difficulties occurring in the integration of PD and SiOB, and highly stepped patterning, and silicon mirror roughness and how-to-solve will be discussed.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.5
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• pp.232-237
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• 2005

In this paper, we fabricated $CO_2$ gas sensor based on the MEMS infrared sensor and characterized its electrical and $CO_2$-sensing properties. The fabricated $CO_2$ gas sensor by MEMS technique has many advanges over NDIR(nondispersive) $CO_2$ sensor such as monolithic fabrication, very high selectivity on $CO_2$, low power consumption and compact system. Microbolometer by surface micromachining was fabricated for gas detector and $CO_2$ filter chip by bulk micromachining was fabricated for signal referencing. By using the proposed and fabricated gas sensor, we are expected to measure $CO_2$ concentration more accurately with high reliability.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1971-1973
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• 1996

In this paper various types of gyroscope fabricated by micromachining technologies were reviewed. Four common types of gyroscope reported in the past few years are beam, tuning fork, gimbal, and vibrating shell structure made by surface micromachining using sacrificial layer, bulk micromachining using RIE, or electroplating method. In the study of these new gyroscopes, the fabrication methods, advantages and disadvantages of each structure were examined as well as the direction of development in the future.

• Journal of the Korean Society for Precision Engineering
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• v.17 no.7
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• pp.52-58
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• 2000

최근 첨단 미세가공기술로 주목을 받고 있는 실리콘 마이크로머시닝 기술과 이를 기반으로 한 산업용 MEMS 개발현황을 소개한다. 전반부에서는 마이크로머시닝 기술의 종류를 소개하고 각각의 기술에 대해 기술근원, 미세가공원리와 기본 가공공정을 간략히 요약한 후 기전 집적형태의 마이크로머신과의 연계성을 고려한 시스템적인 측면에서의 기술특성을 상호 비교한다. 또한 가공의 양산성, 재현성, 조립성 측면에서 마이크로머시닝의 가공성을 조명함과 동시에 향후 발전방향을 전망한다.(중략)

• Transactions of the Korean Society of Mechanical Engineers A
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• v.25 no.3
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• pp.520-528
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• 2001

This paper investigates a resonant microaccelerometer that measures acceleration using a built-in micromechanical resonator, whose resonant frequency is changed by the acceleration-induced axial force. A set of design equations for the resonant microaccelerometer has been developed, including analytic formulae for resonant frequency, sensitivity, nonlinearity and maximum stress. On this basis, the sizes of the accelerometer are designed for the sensitivity of 10$^3$Hz/g in the detection range of 5g, while satisfying the conditions for the maximum nonlinearity of 5%, the minimum shock endurance of 100g and the size constraints placed by microfabrication process. A set of the resonant accelerometers has been fabricated by the combined use of bulk-micromachining and surface-micromachining techniques. From a static test of the cantilever beam resonant accelerometer, a frequency shift of 860Hz has been measured for the proof-mass deflection of 4.3${\pm}$0.5$\mu\textrm{m}$; thereby resulting in the detection sensitivity of 1.10${\times}$10$^3$Hz/g. Uncertainty analysis of the resonant frequency output has been performed to identify important issues involved in the design, fabrication and testing of the resonant accelerometer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.958-962
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• 2002

This paper reports on the fabrication of free-standing microstructures by DRIE (deep reactive ion etching). SOI (Si-on-insulator) structures with buried cavities are fabricated by SDB (Si-wafer direct bonding) technology and electrochemical etch-stop. The cavity was formed the upper handling wafer by Si anisotropic etch technique. SDB process was performed to seal the formed cavity under vacuum condition at -760 mmHg. In the SDB process, captured air and moisture inside of the cavities were removed by making channels towards outside. After annealing (100$0^{\circ}C$, 60 min.), the SDB SOI structure with a accurate thickness and a good roughness was thinned by electrochemical etch-stop in TMAH solution. Finally, it was fabricated free-standing microstructures by DRIE. This result indicates that the fabrication technology of free-standing microstructures by combination SDB, electrochemical etch-stop and DRIE provides a powerful and versatile alternative process for high-performance bulk micromachining in MEMS fields.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.2
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• pp.132-139
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• 2000

This paper reports a novel micromachining process based on UV-LIGA process and (110) silicon anisotropic etching for fabrication of a high-aspect-ratio comb actuator. The comb electrodes are fabricated by (110) SILICON comb structure considering the etch-rate-ratio between (110) and (111) planes and lateral etch rate of a beam-type structure. The fabricated structure was$ 400\mum \; thick\; and\; 18\mum$ wide comb electrodes separated by $7\mim$ so that the height-gap ratio was about 57. Also considering resonant frequency of the comb actuator and the frequency-matching between sensing and driving mode for gyroscope application, we designed the number, width, height and length of the spring structures. Electroplated gold springs on both sides of the seismic mass were $15\mum\; wide,\; 14\mum\; thick\; and \; 500\mum$ long. The fabricated comb actuator had resonant frequency ay 1430Hz, which was calculated to be 1441Hz. The proposed fabrication process can be applicable to the fabrication of a high-aspect-ratio comb actuator for a large displacement actuator and precision sensors. Moreover, this combined process enables to fabricate a more complex structure which cannot be fabricate only by surface or bulk micromachining.

• Proceedings of the Optical Society of Korea Conference
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• 2003.02a
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• pp.322-323
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• 2003

Silicon substrate was fabricated by bulk silicon micromachining and it's structure is based on a proof mass suspended by two beam. To monitor the acceleration, dynamic excitation of accelerometer was performed using a shaker. The attached FFPI and suspension beam are bent because support beam move with variation of the proof mass. Thus phase difference detected by the acceleration change. So we can know that resonance frequency of fabricated accelerometer is about 557 Hz and dynamic range was measured from 0 g to 2 g.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.413-415
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• 1996

This paper presents a technique for fabricating an electro-optical microlens for microcolumn e-beam system. The device, named Self-Aligned Microlens (SAM) was realized by mixing surface and bulk micromachining technology. The microbridges were formed on both sides of silicon wafer symmetrically. The alignment error between the electrodes could be controlled within a few micrometers with also reducing the numbers of anodic bonding.